公开(公告)号：US07094697B2

公开(公告)日：2006-08-22

申请号：US10979161

申请日：2004-11-03

Applicant: Meng Fen Cheng ,  Ya Ling Po ,  Ting Sing Wang

Inventor： Meng Fen Cheng ,  Ya Ling Po ,  Ting Sing Wang

IPC: H01L21/311 ,  H01L21/8242 ,  H01L21/20

CPC classification number: H01L29/66181 ,  H01L21/30604 ,  H01L21/30608 ,  H01L27/1087

Abstract: The method for preparing a deep trench uses a dry etching process to form a trench in a silicon substrate, and an etching mixture is then coated on the surface of the silicon substrate and inside the deep trench. A portion of etching mixture is removed from the surface of the silicon substrate and the trench above a predetermined depth from the surface of the substrate, and an etching process is then performed using the etching mixture remaining inside the trench to etch the silicon substrate below the predetermined depth so as to form the deep trench. The etching mixture comprises a conveying solution and an etchant, and the viscosity of the conveying solution is higher than that of the etchant. The conveying solution is spin-on-glass or a photoresist, and the etchant is tetramethylammonium hydroxide, ammonium, or hydrofluoric acid. The volume ratio of the conveying solution and the etchant is preferably between 50:1 and 20:1.

Abstract translation: 制备深沟槽的方法使用干蚀刻工艺在硅衬底中形成沟槽，然后将蚀刻混合物涂覆在硅衬底的表面上和深沟槽内。 蚀刻混合物的一部分从硅衬底的表面和沟槽上方超过衬底表面的预定深度去除，然后使用残留在沟槽内的蚀刻混合物进行蚀刻工艺，以将硅衬底 预定深度以形成深沟槽。 蚀刻混合物包括输送溶液和蚀刻剂，并且输送溶液的粘度高于蚀刻剂的粘度。 输送溶液是旋涂玻璃或光致抗蚀剂，蚀刻剂是四甲基氢氧化铵，铵或氢氟酸。 输送溶液和蚀刻剂的体积比优选为50:1至20:1。

公开(公告)号：US20060057848A1

公开(公告)日：2006-03-16

申请号：US10979161

申请日：2004-11-03

Applicant: Meng Cheng ,  Ya Ling Po ,  Ting Sing Wang

Inventor： Meng Cheng ,  Ya Ling Po ,  Ting Sing Wang

IPC: H01L21/302

CPC classification number: H01L29/66181 ,  H01L21/30604 ,  H01L21/30608 ,  H01L27/1087

Abstract: The method for preparing a deep trench uses a dry etching process to form a trench in a silicon substrate, and an etching mixture is then coated on the surface of the silicon substrate and inside the deep trench. A portion of etching mixture is removed from the surface of the silicon substrate and the trench above a predetermined depth from the surface of the substrate, and an etching process is then performed using the etching mixture remaining inside the trench to etch the silicon substrate below the predetermined depth so as to form the deep trench. The etching mixture comprises a conveying solution and an etchant, and the viscosity of the conveying solution is higher than that of the etchant. The conveying solution is spin-on-glass or a photoresist, and the etchant is tetramethylammonium hydroxide, ammonium, or hydrofluoric acid. The volume ratio of the conveying solution and the etchant is preferably between 50:1 and 20:1.