公开(公告)号：US5703492A

公开(公告)日：1997-12-30

申请号：US370888

申请日：1995-01-10

申请人： Toyokazu Nakamura ,  Yasuko Hanagama ,  Tohru Tsujide ,  Kenji Morohashi

发明人： Toyokazu Nakamura ,  Yasuko Hanagama ,  Tohru Tsujide ,  Kenji Morohashi

IPC分类号： G01R31/302 ,  G01R31/319 ,  H01L21/66 ,  G01R31/00

CPC分类号： G01R31/31912

摘要： In a fault analysis of large-scale integrated (LSI) circuits, a potential distribution image of a non-defective product and another potential distribution image of a defective product are displayed alternately and continuously in time, so that it is possible to acquire in real time an image of any location within a whole surface of the LSI chip. As a result, it can be viewed as if the potential distribution image of the non-defective product and the potential distribution image of the defective product are overlapped or superimposed with over time. Accordingly, a different portion between the non-defective and defective potential distribution images can be seen distinguishably from a coincident portion between the non-defective and defective potential distribution images, so that it is possible to trace the different portion in real time.

摘要翻译： 在大规模集成（LSI）电路的故障分析中，无缺陷产品的潜在分布图像和缺陷产品的另一个潜在分布图像被及时地交替地和连续地显示，使得可以实际获取 时间是LSI芯片整个表面内的任何位置的图像。 结果，可以看出，无缺陷产品的潜在分布图像和缺陷产品的潜在分布图像随时间重叠或叠加。 因此，可以从无缺陷和缺陷电位分布图像之间的重合部分区分出不缺陷和缺陷电位分布图像之间的不同部分，从而可以实时追踪不同部分。

公开(公告)号：US5422498A

公开(公告)日：1995-06-06

申请号：US227241

申请日：1994-04-13

申请人： Kiyoshi Nikawa ,  Yasuko Hanagama ,  Toyokazu Nakamura

发明人： Kiyoshi Nikawa ,  Yasuko Hanagama ,  Toyokazu Nakamura

IPC分类号： G01R31/28 ,  G01R31/311 ,  G01R31/00

CPC分类号： G01R31/311 ,  G01R31/2853

摘要： The invention provides an apparatus for diagnosing a void within a conductive material for interconnections of semiconductor integrated circuits. A laser beam irradiating section is provided for supplying a thermal wave to interconnections of the semiconductor integrated circuits to cause a rise of a temperature of the conductive material due to a thermal accumulation around a void within the conductive material, the thermal wave supplying section being able to move in a plane for accomplishment of a scanning operation of the thermal wave supply. A voltage applying section is connected to the interconnections. A current detecting section is connected to the interconnections for detecting an amount of an electrical current flowing through any part of the interconnections to sense a variation of the amount thereof on account of the rise of the temperature of the conductive material due to the thermal accumulation around the void within the conductive material so as to detect any void within the conductive material.

摘要翻译： 本发明提供一种用于诊断用于半导体集成电路的互连的导电材料内的空隙的装置。 提供激光束照射部分，用于将热波提供给半导体集成电路的互连，导致由导电材料内的空隙周围的热积聚引起的导电材料的温度升高，热波供应部能够 在飞机中移动以完成热波供应的扫描操作。 电压施加部连接到互连。 电流检测部分连接到互连件，用于检测流过互连部分的电流量，以便由于热累积导致的导电材料的温度升高而感测其量的变化 导电材料内的空隙，以便检测导电材料内的任何空隙。

公开(公告)号：US5521516A

公开(公告)日：1996-05-28

申请号：US354088

申请日：1994-12-06

申请人： Yasuko Hanagama ,  Toyokazu Nakamura ,  Kiyoshi Nikawa ,  Tohru Tsujide

发明人： Yasuko Hanagama ,  Toyokazu Nakamura ,  Kiyoshi Nikawa ,  Tohru Tsujide

IPC分类号： G01R31/302 ,  G01R31/307 ,  H01L21/66 ,  G01R1/04

CPC分类号： G01R31/307

摘要： A semiconductor integrated circuit fault analyzing apparatus includes an electron beam tester and controller. The electron beam tester includes an electron gun assembly for generating a primary electron beam and forms a voltage contrast image on the basis of a detection amount of secondary electrons obtained by irradiating the primary electron beam from the electron gun assembly onto a semiconductor integrated circuit serving as a target to be tested and supplied with a test pattern signal, thereby specifying a faulty circuit portion of the semiconductor integrated circuit using the formed voltage contrast image. The controller sets, immediately before the test pattern signal is supplied to the semiconductor integrated circuit, at least one of a power and a signal which are supplied to the semiconductor integrated circuit to be a voltage different from a voltage obtained in the presence of the test pattern signal to cause the electron beam tester to acquire a voltage contrast image free from charge-up phenomena in synchronism with the start of supplying the test pattern signal.

摘要翻译： 半导体集成电路故障分析装置包括电子束测试器和控制器。 该电子束测试器包括一个用于产生一次电子束的电子枪组件，并且基于通过将来自电子枪组件的一次电子束照射到半导体集成电路而获得的二次电子的检测量形成电压对比图像， 要测试并提供测试图案信号的目标，从而使用形成的电压对比图像指定半导体集成电路的故障电路部分。 控制器将紧接在测试图案信号提供给半导体集成电路之前，将提供给半导体集成电路的功率和信号中的至少一个设置为与存在测试时获得的电压不同的电压 模式信号使电子束测试仪与开始提供测试图案信号同步地获取没有充电现象的电压对比图像。