公开(公告)号：US20060154486A1

公开(公告)日：2006-07-13

申请号：US11032021

申请日：2005-01-11

申请人： Vaidyanathan Balasubramaniam ,  Yasunori Hatamura ,  Masaaki Hagihara ,  Eiichi Nishimura ,  Koichiro Inazawa ,  Rie Inazawa

发明人： Vaidyanathan Balasubramaniam ,  Yasunori Hatamura ,  Masaaki Hagihara ,  Eiichi Nishimura ,  Koichiro Inazawa ,  Rie Inazawa

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/02063 ,  G03F7/427 ,  H01J37/32082 ,  H01J2237/3342 ,  H01L21/31138 ,  H01L22/26

摘要： A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluorocarbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

摘要翻译： 提供了一种用于等离子体灰化以去除光刻胶残余物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。 灰化方法使用涉及含氢气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物 并从室表面除去有害的碳氟化合物残留物。 在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。 在第二清洗步骤中使用小于20mTorr的室压力。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。

公开(公告)号：US06849559B2

公开(公告)日：2005-02-01

申请号：US10259381

申请日：2002-09-30

申请人： Vaidyanathan Balasubramaniam ,  Yasunori Hatamura ,  Masaaki Hagiwara ,  Eiichi Nishimura ,  Kouichiro Inazawa

发明人： Vaidyanathan Balasubramaniam ,  Yasunori Hatamura ,  Masaaki Hagiwara ,  Eiichi Nishimura ,  Kouichiro Inazawa

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/31 ,  H01L21/461

CPC分类号： H01L21/76814 ,  G03F7/427 ,  H01L21/02063 ,  H01L21/31138

摘要： A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

摘要翻译： 提供了一种用于等离子体灰化以去除光刻胶残留物的蚀刻残留物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。 灰化方法使用包含含氢气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻以除去大量的光致抗蚀剂残余物和蚀刻残留物 并从室表面除去有害的氟碳残余物。 在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。

公开(公告)号：US08382942B2

公开(公告)日：2013-02-26

申请号：US10549283

申请日：2004-03-17

申请人： Yasunori Hatamura ,  Kunihko Hinata

发明人： Yasunori Hatamura ,  Kunihko Hinata

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/458 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32642 ,  H01L21/67069

摘要： A focus ring assembly configured to be coupled to a substrate holder comprises a focus ring and a secondary focus ring coupled to the focus ring, wherein the secondary focus ring is configured to reduce the deposition of process residue on a backside surface of the substrate.

摘要翻译： 配置为耦合到衬底保持器的聚焦环组件包括耦合到聚焦环的聚焦环和次聚焦环，其中所述次聚焦环被配置为减少在衬底的背侧表面上的工艺残留物的沉积。

公开(公告)号：US07344993B2

公开(公告)日：2008-03-18

申请号：US11032021

申请日：2005-01-11

申请人： Vaidyanathan Balasubramaniam ,  Yasunori Hatamura ,  Masaaki Hagihara ,  Eiichi Nishimura ,  Rie Inazawa, legal representative

发明人： Koichiro Inazawa

IPC分类号： H01L21/302

CPC分类号： H01L21/02063 ,  G03F7/427 ,  H01J37/32082 ,  H01J2237/3342 ,  H01L21/31138 ,  H01L22/26

摘要： A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluorocarbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

摘要翻译： 提供了一种用于等离子体灰化以去除光刻胶残余物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。 灰化方法使用包括含氢气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物 并从室表面除去有害的碳氟化合物残留物。 在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。 在第二清洗步骤中使用小于20mTorr的室压力。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。

公开(公告)号：US20070000614A1

公开(公告)日：2007-01-04

申请号：US10549283

申请日：2004-03-17

申请人： Yasunori Hatamura ,  Kunihiko Hinata

发明人： Yasunori Hatamura ,  Kunihiko Hinata

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32642 ,  H01L21/67069

摘要： A focus ring assembly configured to be coupled to a substrate holder comprises a focus ring and a secondary focus ring coupled to the focus ring, wherein the secondary focus ring is configured to reduce the deposition of process residue on a backside surface of the substrate.

摘要翻译： 配置为耦合到衬底保持器的聚焦环组件包括耦合到聚焦环的聚焦环和次聚焦环，其中辅助聚焦环被配置为减少在衬底的背侧表面上的工艺残留物的沉积。