公开(公告)号：US4500789A

公开(公告)日：1985-02-19

申请号：US411316

申请日：1982-08-25

申请人： Yasutaka Ban ,  Toshihiko Osada

发明人： Yasutaka Ban ,  Toshihiko Osada

IPC分类号： H01L21/027 ,  H01J37/302 ,  H01J37/304 ,  H01L21/30

CPC分类号： H01L21/30 ,  H01J37/3026 ,  H01J37/304 ,  H01J2237/31769

摘要： When an electron beam is projected onto a desired pattern region, the acceleration voltage of the electron beam is set at a value at which the distribution of the scattered electrons in a predetermined region is substantially uniform. The exposure dosage is determined according to the ratio between the total area of the patterns to which the electron beam is projected in the predetermined region and the area of the predetermined region. The exposure time of the electron beam is determined in dependence upon a dose amount and the electron beam current. The exposure time of the electron beam is changed when pattern data is changed and a correction factor is calculated accordingly.

摘要翻译： 当电子束投射到期望的图案区域时，电子束的加速电压被设定为预定区域内的散射电子的分布基本上均匀的值。 曝光剂量根据在预定区域中投射电子束的图案的总面积与预定区域的面积之间的比率来确定。 电子束的曝光时间取决于剂量和电子束电流。 当图案数据改变时电子束的曝光时间改变，并且相应地计算校正因子。

公开(公告)号：US5126220A

公开(公告)日：1992-06-30

申请号：US648697

申请日：1991-01-31

申请人： Kazuo Tokitomo ,  Yasutaka Ban ,  Kenji Sugishima

发明人： Kazuo Tokitomo ,  Yasutaka Ban ,  Kenji Sugishima

IPC分类号： G03F1/30 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027

CPC分类号： G03F1/30

摘要： A reticle comprises a substrate transparent to an optical beam, an opaque layer provided on the substrate for interrupting the optical beam according to the desired pattern, the opaque layer being patterned to form an opaque pattern that interrupts the optical beam and a transparent pattern that transmits the optical beam selectively according to the desired pattern; and a phase shift pattern transparent to the optical beam for transmitting the optical beam therethrough, wherein the phase shift pattern comprises an electrically conductive material and provided on the substrate in correspondence to the transparent pattern in the opaque layer, for canceling the diffraction of the optical beam passed through the transparent pattern.

公开(公告)号：US4487795A

公开(公告)日：1984-12-11

申请号：US363857

申请日：1982-03-31

申请人： Hiroshi Yasuda ,  Yasutaka Ban

发明人： Hiroshi Yasuda ,  Yasutaka Ban

IPC分类号： H01L21/3213 ,  H01L21/027 ,  H01L21/30 ,  H01L21/768 ,  H01L23/528 ,  B32B3/24 ,  G03C5/00

CPC分类号： H01L21/30 ,  H01L21/0277 ,  H01L21/76885 ,  H01L23/5283 ,  H01L2924/0002 ,  Y10S428/901 ,  Y10T428/24331 ,  Y10T428/24802 ,  Y10T428/24917

摘要： A conductor pattern consisting of conductor lines is formed in an electronic device by an electron-beam lithography process using a positive resist. After the formation of a positive resist layer on a conductive layer, a linear pattern of latent images is formed by exposure of an electron-beam along the contours of the conductor lines to be formed. The positive resist layer is developed and then serves as a mask against an etchant. The conductive layer is selectively etched to divide it into the patterned conductor lines and remaining conductor portions.

摘要翻译： 通过使用正性抗蚀剂的电子束光刻工艺在电子器件中形成由导体线组成的导体图案。 在导电层上形成正的抗蚀剂层之后，通过沿着要形成的导体线的轮廓电子束的曝光来形成潜像的线性图案。 显影正性抗蚀剂层，然后作为抵抗蚀刻剂的掩模。 选择性地蚀刻导电层以将其分成图案化的导体线和剩余的导体部分。

公开(公告)号：USD933137S1

公开(公告)日：2021-10-12

申请号：US35505954

申请日：2018-05-11

申请人： Yasutaka Ban

设计人： Yasutaka Ban

公开(公告)号：US5147742A

公开(公告)日：1992-09-15

申请号：US707220

申请日：1991-05-24

申请人： Yasutaka Ban ,  Kazuo Tokitomo

发明人： Yasutaka Ban ,  Kazuo Tokitomo

IPC分类号： G03F1/54 ,  G03F1/68 ,  G03F1/72

CPC分类号： G03F1/60 ,  G03F1/54 ,  G03F1/76

摘要： A photomask for an ultraviolet light with a contrast of 10 or larger can be fabricated by generating a color center by irradiating a calcium fluoride crystal substrate with a KrF excimer laser (wavelength of 248 nm) with an energy of 10 J/cm.sup.2 through an original photomask formed by a chromium film on a quartz substrate and forming a pattern by a color center corresponding to an original photomask pattern. In the same way, a similar photomask can be fabricated by irradiating a calcium fluoride crystal substrate with X-rays having a wavelength ranging from 0.5 to 1.0 nm through an original mask formed by a gold film on the silicon substrate.