Abstract:
A floating gate memory architecture having current regulator is disclosed. A floating gate memory block have at least a programming voltage node for being programmed a plurality of bits according to the control of a plurality of bit lines. A high voltage source provides a regulated voltage when the plurality of bits are programmed in. A high voltage decoder locates between the floating gate memory block and the high voltage source for connecting the voltage to the programming voltage node according to the programming data of the floating gate memory block. A current regulator connects to the programming voltage node for keeping the programming voltage node in a constant voltage, and making a constant current flowing into said floating gate memory block according to said plurality of bits.
Abstract:
A current sense amplifier with dynamic pre-charge is proposed. There is a storage unit having a sense line, a voltage amplifier for generating a first output signal depending on the sense line, a first current mirror for generating a first current depending on the first output signal, a second current mirror for generating a second current depending on a reference storage unit, and a pre-charge circuit for generating a charge up signal on the sense line to pre-charge the sense line to an operation current level depending on the first output signal, the second current and a clock pulse so as to directly detect a data in the storage unit during detecting the sense line.