公开(公告)号：US20050255634A1

公开(公告)日：2005-11-17

申请号：US10843867

申请日：2004-05-11

申请人： Hamza Yilmaz ,  Anthony Chia ,  Xiaoguang Zeng ,  Wong Ming ,  Liming Wang ,  Yiju Zhang

发明人： Hamza Yilmaz ,  Anthony Chia ,  Xiaoguang Zeng ,  Wong Ming ,  Liming Wang ,  Yiju Zhang

IPC分类号： H01L21/44 ,  H01L21/68 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L23/49548 ,  H01L21/6835 ,  H01L23/3107 ,  H01L24/48 ,  H01L24/97 ,  H01L2221/68331 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Singulation of individual electronic packages fabricated as part of a common matrix, is accomplished by mask patterning and chemical exposure in combination with physical sawing. In one embodiment of a singulation process in accordance with the present invention, an initial, shallow saw cut into inter-package regions of the matrix exposes underlying metal to subsequent chemical etching steps. In an alternative embodiment, a separate photoresist mask may be patterned over the matrix to selectively expose metal in inter-package regions to chemical etching.

摘要翻译： 作为公共矩阵的一部分制造的单个电子封装的分割是通过掩模图案化和化学暴露与物理锯切结合来实现的。 在根据本发明的切割工艺的一个实施例中，切割成基体的封装间区域的初始的浅锯切将下面的金属暴露于随后的化学蚀刻步骤。 在替代实施例中，单独的光致抗蚀剂掩模可以在矩阵上图案化以选择性地将包装区域中的金属暴露于化学蚀刻。

公开(公告)号：US07553700B2

公开(公告)日：2009-06-30

申请号：US10843867

申请日：2004-05-11

申请人： Hamza Yilmaz ,  Anthony Chia ,  Xiaoguang Zeng ,  Wong Hie Ming ,  Liming Wang ,  Yiju Zhang

发明人： Hamza Yilmaz ,  Anthony Chia ,  Xiaoguang Zeng ,  Wong Hie Ming ,  Liming Wang ,  Yiju Zhang

IPC分类号： H01L21/44

CPC分类号： H01L23/49548 ,  H01L21/6835 ,  H01L23/3107 ,  H01L24/48 ,  H01L24/97 ,  H01L2221/68331 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Singulation of individual electronic packages fabricated as part of a common matrix, is accomplished by mask patterning and chemical exposure in combination with physical sawing. In one embodiment of a singulation process in accordance with the present invention, an initial, shallow saw cut into inter-package regions of the matrix exposes underlying metal to subsequent chemical etching steps. In an alternative embodiment, a separate photoresist mask may be patterned over the matrix to selectively expose metal in inter-package regions to chemical etching.

摘要翻译： 作为公共矩阵的一部分制造的单个电子封装的分割是通过掩模图案化和化学暴露与物理锯切结合来实现的。 在根据本发明的切割工艺的一个实施例中，切割成基体的封装间区域的初始的浅锯切将下面的金属暴露于随后的化学蚀刻步骤。 在替代实施例中，单独的光致抗蚀剂掩模可以在矩阵上图案化以选择性地将包装区域中的金属暴露于化学蚀刻。