公开(公告)号：US06884728B2

公开(公告)日：2005-04-26

申请号：US10289972

申请日：2002-11-06

申请人： Jun-Lung Huang ,  Jen-Cheng Liu ,  Ching-Hui Ma ,  Yi-Chen Huang ,  Yin-Shen Chu ,  Hong-Ming Chen ,  Li-Chih Chaio

发明人： Jun-Lung Huang ,  Jen-Cheng Liu ,  Ching-Hui Ma ,  Yi-Chen Huang ,  Yin-Shen Chu ,  Hong-Ming Chen ,  Li-Chih Chaio

IPC分类号： H01L21/311 ,  H01L21/768

CPC分类号： H01L21/76808 ,  H01L21/31144

摘要： A method for improving a photolithographic patterning process to avoid undeveloped photoresist contamination in a semiconductor manufacturing process including providing a first semiconductor feature having an anisotropically etched opening including sidewalls. The first semiconductor feature further provide an overlying photoresist layer photolithographically patterned for anisotropically etching a second semiconductor feature opening overlying and encompassing the first semiconductor feature; blanket depositing a polymeric passivation layer over the overlying photoresist layer including covering at least a portion of the sidewalls including polymeric containing residues; and, removing the polymeric passivation layer including a substantial portion of the polymeric containing residues from at least a portion of the sidewalls prior to anisotropically etching the second semiconductor feature.

摘要翻译： 一种用于改善光刻图案化工艺以避免半导体制造工艺中未发展的光致抗蚀剂污染的方法，包括提供具有包括侧壁的各向异性蚀刻的开口的第一半导体特征。 第一半导体特征还提供光刻图案的上覆光致抗蚀剂层，以各向异性地蚀刻覆盖并包围第一半导体特征的第二半导体特征开口; 在所述覆盖的光致抗蚀剂层上方覆盖沉积聚合物钝化层，所述光致抗蚀剂层包括覆盖包括聚合物含有残余物的侧壁的至少一部分; 以及在各向异性蚀刻所述第二半导体特征之前，从所述侧壁的至少一部分去除所述聚合物钝化层，所述聚合物钝化层包括大部分含聚合物的残余物。

公开(公告)号：US20070020921A1

公开(公告)日：2007-01-25

申请号：US11185047

申请日：2005-07-20

申请人： Yin-Shen Chu ,  Chia-Piao Lee

发明人： Yin-Shen Chu ,  Chia-Piao Lee

IPC分类号： H01L21/4763

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76834

摘要： Methods of preventing photoresist scum formation for etch processes for patterning material layers of semiconductor device material layers are disclosed. A treatment of N2 and O2 is used to prevent the formation of photoresist scum. The treatment may be performed in-situ, and may be performed during the etch process, after the etch process, or both. The treatment is particularly beneficial when implemented during the patterning of low dielectric constant material layers, and when used for the formation of isolated via patterns.

摘要翻译： 公开了防止用于蚀刻工艺的光致抗蚀剂浮渣的方法，用于图案化半导体器件材料层的材料层。 使用N 2 O 2和O 2 N的处理来防止光致抗蚀剂浮渣的形成。 该处理可以原位进行，并且可以在蚀刻工艺期间，在蚀刻工艺之后或两者之间进行。 当在低介电常数材料层的图案化期间实施时，以及当用于形成隔离通孔图案时，该处理特别有利。

公开(公告)号：US20050032354A1

公开(公告)日：2005-02-10

申请号：US10634086

申请日：2003-08-04

申请人： Yin-Shen Chu ,  Hung-Ming Chen

发明人： Yin-Shen Chu ,  Hung-Ming Chen

IPC分类号： H01L21/311 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76804 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76807

摘要： A method for selectively etching a semiconductor feature opening to controllably achieve a critical dimension accuracy including providing a semiconductor wafer including a first opening formed extending through a thickness of at least one dielectric insulating layer and having an uppermost inorganic BARC layer; depositing a photoresist layer over the uppermost BARC layer and patterning the photoresist layer to form an etching pattern for etching a second opening overlying and encompassing the first opening; carrying out a first plasma assisted etching process to etch through a thickness of the BARC layer including a predetermined amount of CO in a plasma etching chemistry to increase an etching resistance of the photoresist layer; and, carrying out a second plasma assisted etching process to etch through a thickness portion of the at least one dielectric insulating layer to form the second opening.

公开(公告)号：US07820553B2

公开(公告)日：2010-10-26

申请号：US11185047

申请日：2005-07-20

申请人： Yin-Shen Chu ,  Chia-Piao Lee

发明人： Yin-Shen Chu ,  Chia-Piao Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76834

摘要： Methods of preventing photoresist scum formation for etch processes for patterning material layers of semiconductor device material layers are disclosed. A treatment of N2 and O2 is used to prevent the formation of photoresist scum. The treatment may be performed in-situ, and may be performed during the etch process, after the etch process, or both. The treatment is particularly beneficial when implemented during the patterning of low dielectric constant material layers, and when used for the formation of isolated via patterns.

摘要翻译： 公开了防止用于蚀刻工艺的光致抗蚀剂浮渣的方法，用于图案化半导体器件材料层的材料层。 使用N2和O2的处理来防止光致抗蚀剂浮渣的形成。 该处理可以原位进行，并且可以在蚀刻工艺期间，在蚀刻工艺之后或两者之间进行。 当在低介电常数材料层的图案化期间实施时，以及当用于形成隔离通孔图案时，该处理特别有利。

公开(公告)号：US06972258B2

公开(公告)日：2005-12-06

申请号：US10634086

申请日：2003-08-04

申请人： Yin-Shen Chu ,  Hung-Ming Chen

发明人： Yin-Shen Chu ,  Hung-Ming Chen

IPC分类号： H01L21/311 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76804 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76807

摘要： A method for selectively etching a semiconductor feature opening to controllably achieve a critical dimension accuracy including providing a semiconductor wafer including a first opening formed extending through a thickness of at least one dielectric insulating layer and having an uppermost inorganic BARC layer; depositing a photoresist layer over the uppermost BARC layer and patterning the photoresist layer to form an etching pattern for etching a second opening overlying and encompassing the first opening; carrying out a first plasma assisted etching process to etch through a thickness of the BARC layer including a predetermined amount of CO in a plasma etching chemistry to increase an etching resistance of the photoresist layer; and, carrying out a second plasma assisted etching process to etch through a thickness portion of the at least one dielectric insulating layer to form the second opening.

摘要翻译： 一种用于选择性蚀刻半导体特征开口以可控地实现临界尺寸精度的方法，包括提供半导体晶片，所述半导体晶片包括延伸穿过至少一个介电绝缘层的厚度并具有最上层的无机BARC层的第一开口; 在最上层的BARC层上沉积光致抗蚀剂层并图案化光致抗蚀剂层以形成用于蚀刻覆盖并包围第一开口的第二开口的蚀刻图案; 执行第一等离子体辅助蚀刻工艺以在等离子体蚀刻化学中蚀刻包括预定量的CO的BARC层的厚度，以增加光致抗蚀剂层的耐腐蚀性; 以及进行第二等离子体辅助蚀刻工艺以蚀刻通过所述至少一个介电绝缘层的厚度部分以形成所述第二开口。

公开(公告)号：US06777334B2

公开(公告)日：2004-08-17

申请号：US10190073

申请日：2002-07-03

申请人： Le Der Shiu ,  Pin Chia Su ,  Yin Shen Chu

发明人： Le Der Shiu ,  Pin Chia Su ,  Yin Shen Chu

IPC分类号： H01L21461

CPC分类号： H01L21/02071 ,  H01L21/02052 ,  H01L21/31116

摘要： A method for protecting a silicon semiconductor wafer backside surface for removing polymer containing residues from a wafer process surface including providing a silicon semiconductor wafer having a process surface and a backside surface said process surface including metal containing features said process surface at least partially covered with polymer containing residues and said backside surface including exposed silicon containing areas; forming an etching resistant oxide layer over the exposed silicon containing areas; and, subjecting the silicon semiconductor wafer to a series of cleaning steps including a wet etchant corrosive to the exposed silicon containing areas.

摘要翻译： 一种用于保护硅半导体晶片背面的方法，用于从晶片工艺表面除去含有残留物的聚合物，包括提供具有工艺表面和背面的硅半导体晶片，所述工艺表面包括含有金属的特征，所述工艺表面至少部分地被聚合物覆盖 含有残留物和所述背面包括暴露的含硅区域; 在暴露的含硅区域上形成耐蚀刻氧化物层; 并且对硅半导体晶片进行一系列清洁步骤，包括对暴露的含硅区域具有腐蚀性的湿蚀刻剂。