公开(公告)号：US08329386B2

公开(公告)日：2012-12-11

申请号：US12704899

申请日：2010-02-12

申请人： Byung You Hong ,  Hyung Jin Kim ,  Yong Han Roh

发明人： Byung You Hong ,  Hyung Jin Kim ,  Yong Han Roh

IPC分类号： G03F7/26

CPC分类号： B82B3/0052 ,  B81C1/00031 ,  B82Y30/00 ,  B82Y40/00

摘要： A method of selectively positioning nanostructures on a substrate is provided which includes: a first step of forming a photoresist pattern on the substrate and then control the line width of the photoresist pattern in a nano unit to form a nanometer photoresist layer; a second step of forming a protective layer for preventing adsorption of a nano-material in a patter-unformed area on the substrate on which the nanometer photoresist layer has been formed; a third step of removing the photoresist layer formed on the substrate; a fourth step of forming a positively-charged or negatively charged adsorbent layer in the area from which the photoresist layer has been removed; and a fifth step of applying a nano-material-containing solution charged in the opposite polarity of the adsorbent layer to the substrate on which the adsorbent layer has been formed.

摘要翻译： 提供了一种在衬底上选择性地定位纳米结构的方法，其包括：在衬底上形成光致抗蚀剂图案，然后在纳米单元中控制光致抗蚀剂图案的线宽以形成纳米光致抗蚀剂层的第一步骤; 形成用于防止在其上形成有纳米光致抗蚀剂层的基板上的未成型区域中的纳米材料的吸附的保护层的第二步骤; 去除形成在基板上的光致抗蚀剂层的第三步骤; 在去除了光致抗蚀剂层的区域中形成带正电荷或带负电荷的吸附剂层的第四步骤; 以及将在吸附剂层的相反极性上填充的含纳米材料的溶液涂布到已经形成有吸附剂层的基板上的第五步骤。

公开(公告)号：US20060145158A1

公开(公告)日：2006-07-06

申请号：US11322235

申请日：2006-01-03

申请人： Takashi Noguchi ,  Huaxiang Yin ,  Ji-sim Jung ,  Wenxu Xianyu ,  Jang-yeon Kwon ,  Yong-han Roh ,  Suk-won Jeong ,  Seong-hoon Jeong

发明人： Takashi Noguchi ,  Huaxiang Yin ,  Ji-sim Jung ,  Wenxu Xianyu ,  Jang-yeon Kwon ,  Yong-han Roh ,  Suk-won Jeong ,  Seong-hoon Jeong

IPC分类号： H01L29/76

CPC分类号： H01L29/66757 ,  H01L29/4908

摘要： Provided is a silicon thin film transistor (TFT) including: a substrate; a silicon channel layer formed on the substrate with a source and a drain on both sides thereof; a gate insulating layer formed on the silicon channel layer; and a gate formed on the gate insulating layer, wherein the gate insulating layer has a structure including an HfOx film. The TFT has a low leakage current.

摘要翻译： 提供一种硅薄膜晶体管（TFT），包括：基板; 形成在所述基板上的硅沟道层，其两侧具有源极和漏极; 形成在硅沟道层上的栅极绝缘层; 以及形成在所述栅极绝缘层上的栅极，其中所述栅极绝缘层具有包括HfO x膜的结构。 TFT具有低漏电流。