公开(公告)号：US09133565B2

公开(公告)日：2015-09-15

申请号：US13430131

申请日：2012-03-26

申请人： Wen-Chieh Lan ,  Yong-Cheng Yu ,  Wen-Huai Yu ,  Sung-Lin Hsu ,  Wen-Ching Hsu

发明人： Wen-Chieh Lan ,  Yong-Cheng Yu ,  Wen-Huai Yu ,  Sung-Lin Hsu ,  Wen-Ching Hsu

IPC分类号： C30B11/02 ,  C30B11/14 ,  C30B29/06 ,  C30B11/00

CPC分类号： C30B11/02 ,  C30B11/00 ,  C30B11/14 ,  C30B29/06

摘要： A crystalline silicon ingot and a method of manufacturing the same are provided. Using a crystalline silicon seed layer, the crystalline silicon ingot is formed by a directional solidification process. The crystalline silicon seed layer is formed of multiple primary monocrystalline silicon seeds and multiple secondary monocrystalline silicon seeds. Each of the primary monocrystalline silicon seeds has a first crystal orientation different from (100). Each of the secondary monocrystalline silicon seeds has a second crystal orientation different from the first crystal orientation. Each of the primary monocrystalline silicon seeds is adjacent to at least one of the secondary monocrystalline silicon seeds, and separate from the others of the primary monocrystalline silicon seeds.

摘要翻译： 提供一种晶体硅锭及其制造方法。 使用结晶硅籽晶层，通过定向凝固工艺形成晶体硅锭。 晶体硅种子层由多个初级单晶硅晶种和多个次级单晶硅晶种形成。 每个初级单晶硅种子具有不同于（100）的第一晶体取向。 每个次级单晶硅种子具有不同于第一晶体取向的第二晶体取向。 每个初级单晶硅种子与次级单晶硅种子中的至少一种相邻，并与主要单晶硅晶种的其它晶体分离。