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公开(公告)号：US20230307888A1
公开(公告)日：2023-09-28
申请号：US18185721
申请日：2023-03-17
CPC分类号： H01S5/1228 , H01S5/0421 , H01S5/3434
摘要： A distributed feedback laser (DFB) is a type of laser diode in which the active region of the device contains a periodically structured element or diffraction grating, which may include periodic changes in refractive index that cause reflection back into the laser cavity. Conventional DFB lasers used in optical networks may exploit either loss-modulated or index-modulated gratings. In the case of complex-coupling, index-modulated and loss-modulated gratings may be combined together.
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公开(公告)号：US20180048120A1
公开(公告)日：2018-02-15
申请号：US15445378
申请日：2017-02-28
发明人： Haruhiko YOSHIDA , Kazuya OHIRA , Hirotaka UEMURA , Norio llZUKA
CPC分类号： H01S5/18361 , H01S5/021 , H01S5/026 , H01S5/0425 , H01S5/105 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/18375 , H01S5/18377 , H01S5/34326 , H01S5/3434 , H01S2301/176
摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a semiconductor light emitting structure including an active layer, a first light reflecting structure disposed between the substrate and the semiconductor light emitting structure, a second light reflecting structure disposed on an upper side of the semiconductor light emitting structure and a pair of electrodes applying a current to the semiconductor light emitting structure. At least one of the first and second light reflecting structures is a multilayer reflective film including a plurality of structure layers, each structure layer including a high refractive index region and a low refractive index region which are disposed such that a refractive index of the structure layer is periodically changed, and a low refractive index layer disposed between two adjacent structure layers.
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公开(公告)号：US09742152B2
公开(公告)日：2017-08-22
申请号：US14903740
申请日：2014-09-22
发明人： Lianyan Li , Song Tang , Xiangfei Chen , Yunshan Zhang , Jun Lu
IPC分类号： H01S3/10 , H01S5/125 , H01S5/06 , H01S5/40 , H01S5/028 , H01S5/10 , H01S5/34 , H01S5/343 , H01S5/12 , H01S5/026
CPC分类号： H01S5/125 , H01S5/026 , H01S5/0287 , H01S5/0612 , H01S5/1096 , H01S5/1209 , H01S5/1212 , H01S5/3403 , H01S5/3434 , H01S5/4006 , H01S5/4012 , H01S5/4025 , H01S5/4087
摘要： A tunable distributed feedback (DFB) semiconductor laser based on a series mode or a series and parallel hybrid mode. A grating structure of the laser is a sampling Bragg grating based on the reconstruction-equivalent chirp technology. DFB lasers with different operating wavelengths based on the reconstruction-equivalent chirp technology are integrated together by a sampling series combination mode or a series/parallel hybrid mode, one of the lasers is selected to operate via a current, and the operating wavelength of the laser can be controlled by adjusting the current or the temperature, so that the continuous tuning of the operating wavelengths of the lasers can be realized. Various wavelength signals in parallel channels are coupled and then output from the same waveguide. An electrical isolation area (1-11) is adopted between lasers connected in series or lasers connected in series and connected in parallel to reduce the crosstalk between adjacent lasers.
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公开(公告)号：US09716368B2
公开(公告)日：2017-07-25
申请号：US14956888
申请日：2015-12-02
CPC分类号： H01S5/18386 , H01S5/18311 , H01S5/18391 , H01S5/34313 , H01S5/3434
摘要： An embodiment provides a 850 nm VCSEL transmitter that includes an active region having: one or more quantum wells having InGaAs material; and two or more quantum well barriers having AlGaAs or GaAsP materials adjacent to the one or more quantum wells. An in-phase or anti-phase, step or ring surface relief structure depth control is made on either (i) the topmost GaAs surface/contact layers by either dry or wet etching, or (ii) with the help of PECVD made thin SiN layer made on GaAs layer with wet etching for tunable static and dynamic characteristics such as output power, slope efficiency, and resonance oscillation bandwidth, photon lifetime through its damping, rise/fall times of eye-opening, over shooting, and jitter respectively. Moreover, anti-phase surface relief structure diameter control can be made on the topmost GaAs step surface/contact, or SiN ring layers for filtering of higher order modes and reduction of spectral line width.
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公开(公告)号：US09685766B2
公开(公告)日：2017-06-20
申请号：US14725789
申请日：2015-05-29
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/026 , H01S5/0268 , H01S5/0612 , H01S5/125 , H01S5/305 , H01S5/34313 , H01S5/3434 , H01S5/4068 , H01S5/4087
摘要： Disclosed is a method of forming a laser source capable of producing mid-IR laser radiation comprises growing a first core structure on a substrate, etching away the first core structure in one or more locations, and growing a second core structure on the substrate. At least one of the core structures comprises a quantum cascade gain medium emitting at a frequency within the range from 3-14 μm. Also disclosed is a laser source capable of producing mid-IR laser radiation comprising a quantum-cascade core positioned on a substrate for emitting within the range from 3-14 μm and a second core on the substrate positioned in-plane relative to the first core. The second core is one of a) a passive waveguide core b) a second quantum-cascade core and c) a semiconductor active core region.
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公开(公告)号：US20170146734A1
公开(公告)日：2017-05-25
申请号：US15423082
申请日：2017-02-02
发明人： Kazuaki Kiyota , Tatsuya Kimoto , Yusuke Saito
CPC分类号： G02B6/122 , G02B6/12 , G02B6/12011 , G02B6/12019 , G02B6/132 , G02B6/136 , G02B2006/12097 , G02B2006/12121 , G02B2006/12142 , G02F1/017 , G02F1/025 , G02F1/2257 , G02F2001/212 , G02F2201/063 , G02F2202/102 , H01S5/0268 , H01S5/12 , H01S5/209 , H01S5/2232 , H01S5/3434 , H01S5/4012 , H01S5/4025 , H01S5/4087 , H01S5/50
摘要： A semiconductor optical integrated device includes: a substrate; at least a lower cladding layer, a waveguide core layer, and an upper cladding layer sequentially layered on the substrate, a buried hetero structure waveguide portions each having a waveguide structure in which a semiconductor cladding material is embedded near each of both sides of the waveguide core layer; and a ridge waveguide portion having a waveguide structure in which a semiconductor layer including at least the upper cladding layer protrudes in a mesa shape. Further, a thickness of the upper cladding layer in each of the buried hetero structure waveguide portions is greater than a thickness of the upper cladding layer in the ridge waveguide portion.
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公开(公告)号：US20170005455A1
公开(公告)日：2017-01-05
申请号：US14956888
申请日：2015-12-02
CPC分类号： H01S5/18386 , H01S5/18311 , H01S5/18391 , H01S5/34313 , H01S5/3434
摘要： An embodiment provides a 850 nm VCSEL transmitter that includes an active region having: one or more quantum wells having InGaAs material; and two or more quantum well barriers having AlGaAs or GaAsP materials adjacent to the one or more quantum wells. An in-phase or anti-phase, step or ring surface relief structure depth control is made on either (i) the topmost GaAs surface/contact layers by either dry or wet etching, or (ii) with the help of PECVD made thin SiN layer made on GaAs layer with wet etching for tunable static and dynamic characteristics such as output power, slope efficiency, and resonance oscillation bandwidth, photon lifetime through its damping, rise/fall times of eye-opening, over shooting, and jitter respectively. Moreover, anti-phase surface relief structure diameter control can be made on the topmost GaAs step surface/contact, or SiN ring layers for filtering of higher order modes and reduction of spectral line width.
摘要翻译： 实施例提供一种850nm VCSEL发射器，其包括有源区域，该有源区域具有：具有InGaAs材料的一个或多个量子阱; 以及具有与一个或多个量子阱相邻的AlGaAs或GaAsP材料的两个或更多个量子阱屏障。 通过干蚀刻或湿蚀刻，在（i）最上面的GaAs表面/接触层上进行同相或反相，阶梯或环表面浮雕结构深度控制，或（ii）借助于PECVD制成的薄SiN 分别通过湿法刻蚀制成GaAs层，可调谐静态和动态特性如输出功率，斜率效率和谐振振荡带宽，光子寿命通过其阻尼，睁眼上升/下降时间，过拍和抖动。 此外，可以在最高的GaAs台阶表面/接触上进行抗相表面浮雕结构直径控制，或者可以对SiN环层进行高阶模式的滤波和降低谱线宽度。
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公开(公告)号：US09397474B2
公开(公告)日：2016-07-19
申请号：US14497393
申请日：2014-09-26
发明人： Daisuke Morita , Hiroyuki Kawahara , Shinji Kimura
IPC分类号： H01L21/00 , H01S5/0625 , H01S5/343 , H01S5/40 , H01J37/305 , H01S5/026 , H01S5/00 , H01S5/12 , H01S5/30
CPC分类号： H01J37/304 , H01J37/3026 , H01J37/3053 , H01J37/3056 , H01J2237/24585 , H01J2237/30472 , H01J2237/3174 , H01S5/0014 , H01S5/0265 , H01S5/06256 , H01S5/12 , H01S5/3054 , H01S5/34306 , H01S5/34313 , H01S5/34326 , H01S5/3434 , H01S5/4087 , H01S2301/173
摘要： A method for manufacturing a semiconductor device includes forming a lower light confinement layer on a substrate, a light absorption layer on the lower light confinement layer, and an upper light confinement layer on the light absorption layer; and removing parts of these layers to form an optical modulator, forming a laser section having a diffraction grating in a portion of the substrate where the optical modulator is not present, forming a diffusion constraining layer, which constrains diffusion of a dopant, on the upper light confinement layer, and forming a contact layer on the laser section and the diffusion constraining layer. The same dopant is present in the contact layer and the upper light confinement layer.
摘要翻译： 一种半导体器件的制造方法，其特征在于，在基板上形成下部光限制层，在所述下部光限制层上形成光吸收层，在所述光吸收层上形成上部光限制层， 并且去除这些层的部分以形成光学调制器，在不存在光学调制器的基板的一部分中形成具有衍射光栅的激光部分，形成限制掺杂剂扩散的扩散约束层在上部 光限制层，并且在激光部分和扩散约束层上形成接触层。 相同的掺杂剂存在于接触层和上部光限制层中。
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公开(公告)号：US09231367B2
公开(公告)日：2016-01-05
申请号：US13897289
申请日：2013-05-17
申请人： FINISAR CORPORATION
发明人： Yasuhiro Matsui
IPC分类号： H01S5/00 , H04B10/50 , H01S5/0625 , H01S5/12 , B82Y20/00 , H01S5/20 , H01S5/022 , H01S5/026 , H01S5/062 , H01S5/343 , H01S5/34
CPC分类号： H01S5/0085 , B82Y20/00 , H01S5/0035 , H01S5/02276 , H01S5/026 , H01S5/0265 , H01S5/06226 , H01S5/06256 , H01S5/1221 , H01S5/20 , H01S5/34 , H01S5/3415 , H01S5/3416 , H01S5/34306 , H01S5/34313 , H01S5/3434 , H04B10/504
摘要： In an embodiment, a laser chip includes a laser, an optical amplifier, a first electrode, and a second electrode. The laser includes an active region. The optical amplifier is integrated in the laser chip in front of and in optical communication with the laser. The first electrode is electrically coupled to the active region. The second electrode is electrically coupled to the optical amplifier. The first electrode and the second electrode are configured to be electrically coupled to a common direct modulation source.
摘要翻译： 在一个实施例中，激光芯片包括激光器，光放大器，第一电极和第二电极。 激光器包括有源区域。 光放大器集成在激光芯片的前面并与激光光学通信。 第一电极电耦合到有源区。 第二电极电耦合到光放大器。 第一电极和第二电极被配置为电耦合到公共直接调制源。
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10.发明申请公开(公告)号：US20150311676A1
公开(公告)日：2015-10-29
申请号：US14795387
申请日：2015-07-09
CPC分类号： H01S5/3216 , B82Y20/00 , H01S3/04 , H01S3/0675 , H01S3/06754 , H01S3/094003 , H01S3/094011 , H01S3/09415 , H01S3/302 , H01S5/0064 , H01S5/02284 , H01S5/02288 , H01S5/024 , H01S5/0287 , H01S5/1039 , H01S5/1064 , H01S5/146 , H01S5/2018 , H01S5/2077 , H01S5/2205 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/3213 , H01S5/34 , H01S5/3406 , H01S5/34306 , H01S5/3434 , H01S2301/03 , H01S2301/166
摘要： An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.
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