公开(公告)号：US12095232B2

公开(公告)日：2024-09-17

申请号：US17495227

申请日：2021-10-06

Applicant: II-VI Delaware, Inc.

Inventor： Evgeny Zibik ,  Wilfried Maineult

IPC: H01S5/22 ,  H01S5/10 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323

CPC classification number: H01S5/2054 ,  H01S5/1039 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/323

Abstract: A semiconductor laser is formed to include a current blocking layer that is positioned below the active region of the device and used to minimize current spreading beyond the defined dimensions of an output beam's optical mode. When used in conjunction with other current-confining structures typically disposed above the active region (e.g., ridge waveguide, electrical isolation, oxide aperture), the inclusion of the lower current blocking layer improves the efficiency of the device. The current blocking layer may be used in edge-emitting devices or vertical cavity surface-emitting devices, and also functions to improve mode shaping and reduction of facet deterioration by directing current flow away from the facets.

公开(公告)号：US20240243554A1

公开(公告)日：2024-07-18

申请号：US18376661

申请日：2023-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsung LEE ,  Junhee Choi ,  Kiho Kong ,  Joohun Han

IPC: H01S5/323 ,  H01S5/028 ,  H01S5/40

CPC classification number: H01S5/323 ,  H01S5/0282 ,  H01S5/4087

Abstract: Provided is a light source including a plurality of support layers spaced apart from each other, an ionic crystalline layer on each of the plurality of support layers, a two-dimensional (2D) material layer on the ionic crystalline layer, and a light-emitting device including a first clad layer on the 2D material layer, a width of the first clad layer being greater than a width of the 2D material layer in a horizontal direction, an active layer on the first clad layer, and a second clad layer on the active layer and doped as a second conductive type electrically opposite to a first conductive type.

公开(公告)号：US11658465B1

公开(公告)日：2023-05-23

申请号：US16908339

申请日：2020-06-22

Applicant: Apple Inc.

Inventor： Angelo M. Alaimo ,  Richard L. Baer ,  Garam Young ,  Florian R. Fournier ,  Blake M. Coughenour ,  Bryan Dang

IPC: H01S5/323 ,  H01S5/00 ,  H04N23/56 ,  H04N23/74

CPC classification number: H01S5/323 ,  H01S5/0087 ,  H04N23/56 ,  H04N23/74

Abstract: A mobile device includes a camera and a light source module embedded in the mobile device. The light source module includes at least a laser-pumped phosphor light source that includes a photoluminescent phosphor and a laser diode to generate laser light within a first wavelength range to pump the photoluminescent phosphor. Exposure of the photoluminescent phosphor to the laser light results in emission of visible light within a second wavelength range according to a laser-pumped emission spectrum associated with the photoluminescent phosphor.

公开(公告)号：US20190013649A1

公开(公告)日：2019-01-10

申请号：US15752442

申请日：2016-09-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Clemens Vierheilig ,  Andreas Löffler

IPC: H01S5/323 ,  H01S5/028 ,  H01S5/10 ,  H01S5/22

CPC classification number: H01S5/323 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/16 ,  H01S5/162 ,  H01S5/166 ,  H01S5/22 ,  H01S5/221

Abstract: A semiconductor laser includes a semiconductor layer sequence having an n-conducting n-region, a p-conducting p-region and an intermediate active zone, an electrically conductive p-contact layer that impresses current directly into the p-region and is made of a transparent conductive oxide, and an electrically conductive and metallic p-contact structure located directly on the p-contact layer, wherein the semiconductor layer sequence includes two facets forming resonator end faces for the laser radiation, in at least one current-protection region directly on at least one of the facets a current impression into the p-region is suppressed, the p-contact structure terminates flush with the associated facet so that the p-contact structure does not protrude beyond the associated facet and vice versa, and the p-contact layer is removed from at least one of the current-protection regions and in this current-protection region the p-contact structure is in direct contact with the p-region over the whole area.

公开(公告)号：US20180259708A1

公开(公告)日：2018-09-13

申请号：US15975496

申请日：2018-05-09

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yourui Huangfu

IPC: G02B6/122 ,  H01L21/02 ,  G02B6/13

CPC classification number: G02B6/122 ,  G02B6/13 ,  G02B2006/12123 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02538 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/0273 ,  H01L21/308 ,  H01L21/31144 ,  H01L21/7624 ,  H01L29/20 ,  H01L29/78 ,  H01L31/02325 ,  H01L31/1035 ,  H01L33/00 ,  H01S5/00 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/02296 ,  H01S5/026 ,  H01S5/3013 ,  H01S5/323

Abstract: A semiconductor device and a method for producing a semiconductor device are disclosed. The semiconductor device includes a first silicon layer; a first dielectric layer, located on the first silicon layer, where the first dielectric layer includes a window, and a bottom horizontal size of the window of the first dielectric layer is not greater than 20 nm; and a III-V semiconductor layer, located on the first dielectric layer and in the window of the first dielectric layer, and connected to the first silicon layer in the window of the first dielectric layer. A III-V semiconductor material of the semiconductor device has no threading dislocations, and therefore has relatively high performance.

公开(公告)号：US20180131161A1

公开(公告)日：2018-05-10

申请号：US15865447

申请日：2018-01-09

Applicant: Panasonic Corporation

Inventor： MASAO KAWAGUCHI ,  Osamu Imafuji ,  Shinichiro Nozaki ,  Hiroyuki Hagino

IPC: H01S5/20 ,  H01S5/026 ,  H01S5/22 ,  H01S5/343 ,  H01S5/323

CPC classification number: H01S5/2009 ,  H01S5/02276 ,  H01S5/026 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/34333

Abstract: A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlxGa1−xN containing no Indium, where 0 ≤x

公开(公告)号：US20180006432A1

公开(公告)日：2018-01-04

申请号：US15625202

申请日：2017-06-16

Applicant: FUJI XEROX Co., Ltd.

Inventor： Takashi KONDO

IPC: H01S5/042 ,  F21V23/00 ,  H01S5/40 ,  H01S5/30 ,  F21Y2115/30

CPC classification number: H01S5/06817 ,  H01L33/00 ,  H01S5/02276 ,  H01S5/0261 ,  H01S5/042 ,  H01S5/0428 ,  H01S5/06216 ,  H01S5/06226 ,  H01S5/068 ,  H01S5/06825 ,  H01S5/183 ,  H01S5/18313 ,  H01S5/2232 ,  H01S5/3013 ,  H01S5/3095 ,  H01S5/32 ,  H01S5/323 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/42 ,  H01S5/423

Abstract: A light-emitting component includes laser elements and a setting unit. Each laser element is set to be in an on state with a logical value “m (m represents an integer of 1 or more)”, an on state considered as having a logical value “0”, or an off state. The setting unit sets the laser element to be in a state ready to transition to an on state and sets the laser element in the state ready to transition to the on state to be in the on state considered as having a logical value “0” before a timing of setting the laser element to the on state with a logical value “m”.

公开(公告)号：US09859983B2

公开(公告)日：2018-01-02

申请号：US15285123

申请日：2016-10-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jason S. Orcutt

IPC: H04B10/50 ,  G02B6/293 ,  H04J14/06 ,  H01S5/323 ,  H04B10/80 ,  G02B6/27 ,  H01S5/062 ,  H01S5/068 ,  G02B6/12 ,  H01S5/0687 ,  H04B10/516 ,  H01S5/30 ,  H04J14/02 ,  H01S5/14 ,  H01S5/10 ,  H01S3/23 ,  G02B6/126 ,  H01S5/02 ,  H01S5/028 ,  H01S5/04 ,  H01S5/40

CPC classification number: H04B10/503 ,  G02B6/00 ,  G02B6/12004 ,  G02B6/126 ,  G02B6/2773 ,  G02B6/29382 ,  G02B2006/12164 ,  H01S3/2391 ,  H01S5/021 ,  H01S5/0287 ,  H01S5/041 ,  H01S5/06246 ,  H01S5/06821 ,  H01S5/0687 ,  H01S5/1028 ,  H01S5/14 ,  H01S5/141 ,  H01S5/142 ,  H01S5/146 ,  H01S5/3013 ,  H01S5/323 ,  H01S5/4031 ,  H01S2301/163 ,  H04B10/5053 ,  H04B10/506 ,  H04B10/516 ,  H04B10/801 ,  H04J14/02 ,  H04J14/06

Abstract: A technique relates to a superchannel. Laser cavities include a first laser cavity, a next laser cavity, through a last laser cavity. Modulators include a first modulator, a next modulator, through a last modulator, each having a direct input, an add port, and an output. A concatenated arrangement of the laser cavities is configured to form the superchannel, which includes the last laser cavity coupled to the direct input of the last modulator, and the output of the last modulator coupled to the add port of the next modulator. The arrangement includes the next laser cavity coupled to direct input of the next modulator, and the output of the next modulator coupled to add port of first modulator, along with the first laser cavity coupled to direct input of the first modulator, and the output of first modulator coupled to input of a multiplexer, thus forming the superchannel into multiplexer.

公开(公告)号：US20170264080A1

公开(公告)日：2017-09-14

申请号：US15606500

申请日：2017-05-26

Applicant: OSRAM OPTO SEMICONDUCTOR GMBH

Inventor： Alfred LELL ,  Martin STARSSBURG

IPC: H01S5/40 ,  H01S5/026 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01S5/022 ,  H01S5/042 ,  H01S5/20

CPC classification number: H01S5/4043 ,  H01S5/0224 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/2059 ,  H01S5/3013 ,  H01S5/3095 ,  H01S5/323 ,  H01S5/32341 ,  H01S5/34313 ,  H01S5/405 ,  H01S5/4087 ,  H01S5/4093 ,  H01S2301/173

Abstract: A laser diode arrangement comprising: at least one semiconductor substrate; at least two laser stacks based on the AlInGaN material system, each laser stack having an active zone, wherein at least one of the at least two laser stacks comprises a two-dimensional structure of laser diodes; and at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

公开(公告)号：US09559494B2

公开(公告)日：2017-01-31

申请号：US14805808

申请日：2015-07-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Lauer ,  Alvaro Gomez-Iglesias

IPC: H01S5/20 ,  H01S5/10 ,  H01S5/042 ,  H01S5/065 ,  H01S5/40 ,  H01S5/32

CPC classification number: H01S5/0655 ,  H01S5/02284 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/1082 ,  H01S5/2004 ,  H01S5/2018 ,  H01S5/2036 ,  H01S5/2081 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/323 ,  H01S5/4031 ,  H01S2301/166 ,  H01S2301/176 ,  H01S2301/18

Abstract: An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, the waveguide region including first and second waveguide layers and an active layer arranged between the first and second waveguide layers, that generates laser radiation; the waveguide region is arranged between a first and second cladding layers disposed downstream of the waveguide region; a phase structure for selection of lateral modes of the laser radiation emitted by the active layer, wherein the phase structure includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer; at least one first intermediate layer composed of a semiconductor material different from that of the second cladding layer embedded into the second cladding layer; and the cutout at least partly extends from the top side into the first intermediate layer; the second cladding layer contains a first partial layer adjoining the waveguide region.

Abstract translation: 边缘发射半导体激光器包括：半导体本体，其包括波导区域，波导区域包括第一和第二波导层以及布置在第一和第二波导层之间的有源层，其产生激光辐射; 波导区域布置在布置在波导区域下游的第一和第二覆层之间; 用于选择由有源层发射的激光辐射的横向模式的相位结构，其中所述相位结构包括从所述半导体主体的顶侧延伸到所述第二覆层中的至少一个切口; 至少一个第一中间层，由与第二包覆层嵌入的第二包覆层不同的半导体材料构成; 并且所述切口至少部分地从所述顶侧延伸到所述第一中间层中; 第二包层包含邻接波导区域的第一部分层。