公开(公告)号：US08174799B2

公开(公告)日：2012-05-08

申请号：US12218860

申请日：2008-07-17

申请人： Hiroyuki Hoshiya ,  Kenichi Meguro ,  Katsumi Hoshino ,  You Sato ,  Hiroyuki Katada ,  Kazuhiro Nakamoto

发明人： Hiroyuki Hoshiya ,  Kenichi Meguro ,  Katsumi Hoshino ,  You Sato ,  Hiroyuki Katada ,  Kazuhiro Nakamoto

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

摘要： Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect.

摘要翻译： 本发明的实施例有助于提供能够实现高分辨率和高制造稳定性的单元型差分磁阻磁头。 根据一个实施例，通过堆叠下层膜，反铁磁性膜，铁磁性钉扎层，非磁性中间层，软磁性自由层，长距离反向平行耦合层叠膜和差动层叠膜形成磁阻层叠膜 软磁自由层。 长距离反平行耦合分层膜将软磁自由层和差分软磁自由层以约3纳米至20纳米的距离反平行状态进行交换耦合。 通过使用磁阻层叠膜制造单元型差分磁阻磁头，可以实现高分辨率和高制造稳定性而不破坏GMR效应。