公开(公告)号：US20050106313A1

公开(公告)日：2005-05-19

申请号：US10434224

申请日：2003-05-09

Applicant: Hu-Jong Lee ,  Young-Wook Son ,  Jong-Hoon Bae ,  Myung-Ho Bae

Inventor： Hu-Jong Lee ,  Young-Wook Son ,  Jong-Hoon Bae ,  Myung-Ho Bae

IPC: H01L39/22 ,  G01R33/035 ,  H01L39/24 ,  H01L21/00 ,  B05D5/12 ,  H01L29/06 ,  H01L29/08

CPC classification number: G01R33/0354 ,  H01L39/2496

Abstract: A DC superconducting interference device (SQUID) utilizes intrinsic Josephson tunnel junctions formed naturally in stacks of high-Tc superconducting single crystals, where the double-side cleaving technique is used to define a ring-shaped high-Tc superconducting structure with two stacks of intrinsic Josephson junctions inserted in the ring.

Abstract translation: DC超导干扰装置（SQUID）利用在高Tc超导单晶堆叠中自然形成的固有的约瑟夫逊隧道结，其中双侧断裂技术用于限定具有两个内在层叠的环状高Tc超导结构 约瑟夫逊结插入环。

公开(公告)号：US06908771B2

公开(公告)日：2005-06-21

申请号：US10434224

申请日：2003-05-09

Applicant: Hu-Jong Lee ,  Young-Wook Son ,  Jong-Hoon Bae ,  Myung-Ho Bae

Inventor： Hu-Jong Lee ,  Young-Wook Son ,  Jong-Hoon Bae ,  Myung-Ho Bae

IPC: H01L39/22 ,  G01R33/035 ,  H01L39/24 ,  H01L21/00 ,  H01L33/00

CPC classification number: G01R33/0354 ,  H01L39/2496

Abstract: A DC superconducting interference device (SQUID) utilizes intrinsic Josephson tunnel junctions formed naturally in stacks of high-Tc superconducting single crystals, where the double-side cleaving technique is used to define a ring-shaped high-Tc superconducting structure with two stacks of intrinsic Josephson junctions inserted in the ring.

Abstract translation: DC超导干扰装置（SQUID）利用在高Tc超导单晶堆叠中自然形成的固有的约瑟夫逊隧道结，其中双侧断裂技术用于限定具有两个内在层叠的环状高Tc超导结构 约瑟夫逊结插入环。

公开(公告)号：US08993766B2

公开(公告)日：2015-03-31

申请号：US13617357

申请日：2012-09-14

Applicant: Sun Joon Min ,  Yong Seo Cho ,  Jae Kyun Lee ,  Ae Nim Pae ,  Young Wook Son

Inventor： Sun Joon Min ,  Yong Seo Cho ,  Jae Kyun Lee ,  Ae Nim Pae ,  Young Wook Son

IPC: C07D455/06 ,  C07F7/08

CPC classification number: C07D455/06 ,  C07F7/0812

Abstract: The present invention relates to a method for preparing tetrabenazine (TBZ) and dihydrotetrabenazine (DTBZ), and more specifically to a method for preparing tetrabenazine (TBZ) and dihydrotetrabenazine (DTBZ) by using simple and short reaction processes of using 6,7-dimethoxy-1,2,3,4-tetrahydroisoquinoline and 4-methyl-2-(3-(trimethylsilyl)prop-1-ene-2-yl)pentane as starting materials to sequentially perform an alkylation reaction, an Aza-Prins cyclization reaction in the presence of an oxidant and an oxidation reaction.

Abstract translation: 本发明涉及一种制备丁苯那嗪（TBZ）和二氢丁苯那嗪（DTBZ）的方法，更具体地涉及通过使用6,7-二甲氧基苯并咪唑的简单且短的反应方法制备丁苯那嗪（TBZ）和二氢丁苯那嗪（DTBZ）的方法 -1,2,3,4-四氢异喹啉和4-甲基-2-（3-（三甲基甲硅烷基）丙-1-烯-2-基）戊烷作为起始原料，以顺序进行烷基化反应，Aza-Prins环化反应 在氧化剂和氧化反应的存在下。

公开(公告)号：US20130197227A1

公开(公告)日：2013-08-01

申请号：US13617357

申请日：2012-09-14

Applicant: Sun Joon MIN ,  Yong Seo Cho ,  Jae Kyun Lee ,  Ae Nim Pae ,  Young Wook Son

Inventor： Sun Joon MIN ,  Yong Seo Cho ,  Jae Kyun Lee ,  Ae Nim Pae ,  Young Wook Son

IPC: C07D455/06 ,  C07F7/10

CPC classification number: C07D455/06 ,  C07F7/0812

Abstract: The present invention relates to a method for preparing tetrabenazine (TBZ) and dihydrotetrabenazine (DTBZ), and more specifically to a method for preparing tetrabenazine (TBZ) and dihydrotetrabenazine (DTBZ) by using simple and short reaction processes of using 6,7-dimethoxy-1,2,3,4-tetrahydroisoquinoline and 4-methyl-2-(3-(trimethylsilyl)prop-1-ene-2-yl)pentane as starting materials to sequentially perform an alkylation reaction, an Aza-Prins cyclization reaction in the presence of an oxidant and an oxidation reaction.

Abstract translation: 本发明涉及一种制备丁苯那嗪（TBZ）和二氢丁苯那嗪（DTBZ）的方法，更具体地涉及通过使用6,7-二甲氧基苯并咪唑的简单且短的反应方法制备丁苯那嗪（TBZ）和二氢丁苯那嗪（DTBZ）的方法 -1,2,3,4-四氢异喹啉和4-甲基-2-（3-（三甲基甲硅烷基）丙-1-烯-2-基）戊烷作为起始原料，以顺序进行烷基化反应，Aza-Prins环化反应 在氧化剂和氧化反应的存在下。