公开(公告)号：US10734403B2

公开(公告)日：2020-08-04

申请号：US15991309

申请日：2018-05-29

申请人： Taeyong Eom ,  Jiwoon Im ,  Byungsun Park ,  Hyunseok Lim ,  Yu Seon Kang ,  Hyukho Kwon ,  Sungjin Park ,  Jiyoun Seo ,  Dong Hyeop Ha

发明人： Taeyong Eom ,  Jiwoon Im ,  Byungsun Park ,  Hyunseok Lim ,  Yu Seon Kang ,  Hyukho Kwon ,  Sungjin Park ,  Jiyoun Seo ,  Dong Hyeop Ha

IPC分类号： H01L27/11582 ,  G11C16/02 ,  H01L27/11543 ,  H01L27/1157

摘要： Nonvolatile memory devices and methods of fabricating the nonvolatile memory devices are provided. The nonvolatile memory devices may include a stacked structure including a plurality of conductive films and a plurality of interlayer insulating films stacked in an alternate sequence on a substrate and a vertical channel structure extending through the stacked structure. The plurality of conductive films may include a selection line that is closest to the substrate among the plurality of conductive films. The selection line may include a lower portion and an upper portion sequentially stacked on the substrate, and a side of the upper portion of the selection line and a side of the lower portion of the selection line may have different profiles.

公开(公告)号：US20190081067A1

公开(公告)日：2019-03-14

申请号：US15991309

申请日：2018-05-29

申请人： Taeyong EOM ,  Jiwoon Im ,  Byungsun Park ,  Hyunseok Lim ,  Yu Seon Kang ,  Hyukho Kwon ,  Sungjin Park ,  Jiyoun Seo ,  Dong Hyeop Ha

发明人： Taeyong EOM ,  Jiwoon Im ,  Byungsun Park ,  Hyunseok Lim ,  Yu Seon Kang ,  Hyukho Kwon ,  Sungjin Park ,  Jiyoun Seo ,  Dong Hyeop Ha

IPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L27/11543 ,  G11C16/02

CPC分类号： H01L27/11582 ,  G11C16/02 ,  H01L27/11543 ,  H01L27/1157

摘要： Nonvolatile memory devices and methods of fabricating the nonvolatile memory devices are provided. The nonvolatile memory devices may include a stacked structure including a plurality of conductive films and a plurality of interlayer insulating films stacked in an alternate sequence on a substrate and a vertical channel structure extending through the stacked structure. The plurality of conductive films may include a selection line that is closest to the substrate among the plurality of conductive films. The selection line may include a lower portion and an upper portion sequentially stacked on the substrate, and a side of the upper portion of the selection line and a side of the lower portion of the selection line may have different profiles.