公开(公告)号：US08942930B2

公开(公告)日：2015-01-27

申请号：US13412426

申请日：2012-03-05

Applicant: Andrew P. Snyder ,  Yu-Jen Hsiao

Inventor： Andrew P. Snyder ,  Yu-Jen Hsiao

IPC: G06F19/00

CPC classification number: G01M7/022

Abstract: A vibration generation system and method independently controls both frequency spectrum and amplitude distribution. Sensed vibration is used in feedback as a control to generate a controlled drive signal applied to a mechanical actuator. The amplitude distribution has a specified statistical characteristic adjusted to match a target characteristic, such as kurtosis, by adjusting a relative proportion of a coherent component in a randomized phase, which is then combined on a frequency-by-frequency basis with the separately adjusted frequency spectrum while in the frequency domain.

Abstract translation: 振动发生系统和方法独立地控制频谱和振幅分布。 感测振动用作反馈作为控制以产生施加到机械致动器的受控驱动信号。 幅度分布具有通过调整随机化相位中的相干分量的相对比例而被调整以匹配诸如峰度的目标特性的规定的统计特性，然后将该随机化相位中的相干分量的相对比例以逐个频率为基础与单独调节的频率 频域，而在频域。

公开(公告)号：US20130231878A1

公开(公告)日：2013-09-05

申请号：US13412426

申请日：2012-03-05

Applicant: Andrew P. Snyder ,  Yu-Jen Hsiao

Inventor： Andrew P. Snyder ,  Yu-Jen Hsiao

IPC: G06F19/00 ,  G01N29/04

CPC classification number: G01M7/022

Abstract: A vibration generation system and method independently controls both frequency spectrum and amplitude distribution. Sensed vibration is used in feedback as a control to generate a controlled drive signal applied to a mechanical actuator. The amplitude distribution has a specified statistical characteristic adjusted to match a target characteristic, such as kurtosis, by adjusting a relative proportion of a coherent component in a randomized phase, which is then combined on a frequency-by-frequency basis with the separately adjusted frequency spectrum while in the frequency domain.

Abstract translation: 振动发生系统和方法独立地控制频谱和振幅分布。 感测振动用作反馈作为控制以产生施加到机械致动器的受控驱动信号。 幅度分布具有通过调整随机化相位中的相干分量的相对比例而被调整以匹配诸如峰度的目标特性的规定的统计特性，然后将该随机化相位中的相干分量的相对比例以逐个频率为基础与单独调节的频率 频域，而在频域。

公开(公告)号：US20140008726A1

公开(公告)日：2014-01-09

申请号：US13541751

申请日：2012-07-04

Applicant: Yu-Jen HSIAO ,  Ting-Jen HSUEH ,  Jia-Min SHIEH ,  Yu-Ming YEH ,  Chee-Wee LIU ,  Bau-Tong DAI ,  Fu-Liang YANG

Inventor： Yu-Jen HSIAO ,  Ting-Jen HSUEH ,  Jia-Min SHIEH ,  Yu-Ming YEH ,  Chee-Wee LIU ,  Bau-Tong DAI ,  Fu-Liang YANG

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/34 ,  H01L27/142 ,  H01L29/045 ,  H01L31/0322 ,  H01L31/078 ,  H01L31/1804 ,  Y02E10/541 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor structure fabricating method includes the following steps. Firstly, a silicon substrate is provided. The silicon substrate has a first surface and a second surface. In addition, a first semiconductor structure is formed on the first surface of the silicon substrate. Then, the second surface of the silicon substrate is textured as a rough surface. Then, a first electrode layer is formed on the rough surface.

Abstract translation: 半导体结构制造方法包括以下步骤。 首先，提供硅基板。 硅衬底具有第一表面和第二表面。 此外，在硅衬底的第一表面上形成第一半导体结构。 然后，硅衬底的第二表面作为粗糙表面被纹理化。 然后，在粗糙表面上形成第一电极层。