公开(公告)号：US06809341B2

公开(公告)日：2004-10-26

申请号：US10384619

申请日：2003-03-11

申请人： Jung-Kuei Hsu ,  Hsueh-Chih Yu ,  Hung-Yuan Lu ,  Chui-Chuan Chang ,  Kwang-Ru Wang ,  Chang-Da Tsai ,  San Bao Lin ,  Yung-Chiang Hwang ,  Ming-Der Lin

发明人： Jung-Kuei Hsu ,  Hsueh-Chih Yu ,  Hung-Yuan Lu ,  Chui-Chuan Chang ,  Kwang-Ru Wang ,  Chang-Da Tsai ,  San Bao Lin ,  Yung-Chiang Hwang ,  Ming-Der Lin

IPC分类号： H01L2715

CPC分类号： H01L33/0079 ,  H01L21/42 ,  H01L33/14 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405

摘要： A light-emitting diode with enhanced brightness and a method for fabricating the diode is provided. The light-emitting diode includes an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of windows formed in a highly doped layer. At least one conductive contact is formed on the bottom surface of the highly doped layer. A transparent material layer is formed in the windows. An adhesion layer is formed between the transparent material layer and a permanent substrate. A bottom electrode is formed on the bottom surface of the permanent substrate and an opposed electrode is formed on the top surface of the epitaxial LED structure.

摘要翻译： 提供了具有增强亮度的发光二极管和制造二极管的方法。 发光二极管包括具有至少一个发光有源层的外延LED结构，其具有形成在高掺杂层中的多个窗口。 在高掺杂层的底表面上形成至少一个导电接触。 在窗户中形成透明材料层。 在透明材料层和永久性基板之间形成粘附层。 在永久性基板的底表面上形成底部电极，并且在外延LED结构的顶表面上形成相对的电极。

公开(公告)号：US06716654B2

公开(公告)日：2004-04-06

申请号：US10095003

申请日：2002-03-12

申请人： Jung-Kuei Hsu ,  Hsueh-Chih Yu ,  Chia-Liang Hsu ,  Hung-Yuan Lu ,  Yen-Hu Chu ,  Chui-Chuan Chang ,  Kwang-Ru Wang ,  Chang-Da Tsai ,  San Bao Lin ,  Yung-Chiang Hwang ,  Ming-Der Lin

发明人： Jung-Kuei Hsu ,  Hsueh-Chih Yu ,  Chia-Liang Hsu ,  Hung-Yuan Lu ,  Yen-Hu Chu ,  Chui-Chuan Chang ,  Kwang-Ru Wang ,  Chang-Da Tsai ,  San Bao Lin ,  Yung-Chiang Hwang ,  Ming-Der Lin

IPC分类号： H01L2100

CPC分类号： H01L33/0079 ,  H01L21/42 ,  H01L33/14 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405

摘要： The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.

摘要翻译： 本发明公开了一种具有增强的亮度的发光二极管及其制造方法。 发光二极管包括：外延LED结构，其具有在发光有源层内部具有多个间隔物的至少一个发光有源层; 至少一个导电接触，形成在底表面上，其中在发光有源层内部没有形成间隔物; 形成在间隔物中的透明材料层; 在所述透明材料层和永久性基板之间形成的粘附层; 形成在永久性基板的底面上的底部电极; 以及形成在外延LED结构的顶表面上的相对电极。