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    Addition of planarizing dielectric layer to reduce a dishing phenomena experienced during a chemical mechanical procedure used in the formation of shallow trench isolation regions
    1.
    发明授权
    Addition of planarizing dielectric layer to reduce a dishing phenomena experienced during a chemical mechanical procedure used in the formation of shallow trench isolation regions 失效
    添加平面化电介质层以减少在形成浅沟槽隔离区域期间的化学机械程序期间经历的凹陷现象

    公开(公告)号：US06399461B1

    公开(公告)日：2002-06-04

    申请号：US09759905

    申请日：2001-01-16

    申请人： Pao-Kuo Liu ,  Ja-Rong Hsieh ,  Zhi-Yong Wang

    发明人： Pao-Kuo Liu ,  Ja-Rong Hsieh ,  Zhi-Yong Wang

    IPC分类号： H01L2176

    CPC分类号： H01L21/76229

    摘要： A process for fabricating silicon oxide filled, shallow trench isolation (STI), regions, in a semiconductor substrate, featuring the use of a disposable boro-phosphosilicate glass (BPSG), layer, used for planarization of various width, silicon oxide filled, STI regions, has been developed. After completely filling all STI shapes with a high density plasma (HDP), silicon oxide layer, resulting in a non-planar, HDP silicon oxide top surface topography, a BPSG layer is deposited. An anneal procedure is then performed resulting in a planar top surface topography of the reflowed BPSG layer. A chemical mechanical polishing procedure is next employed to remove the planar, reflowed BPSG layer, and portions of the underlying HDP silicon oxide, from the top surface of a silicon nitride stop layer, resulting in a planar top surface topography for all silicon oxide filled, insulator regions.

    摘要翻译： 在半导体衬底中制造氧化硅填充的浅沟槽隔离（STI）区域的方法，其特征在于使用一次性硼硅磷酸盐玻璃（BPSG）层，用于各种宽度的平坦化，填充氧化硅的STI 地区，已经开发。 在用高密度等离子体（HDP），氧化硅层完全填充所有STI形状之后，产生非平面HDP氧化硅顶表面形貌，沉积BPSG层。 然后执行退火程序，导致回流的BPSG层的平面顶表面形貌。 接下来采用化学机械抛光方法从氮化硅阻挡层的顶表面去除平面的，回流的BPSG层和下面的HDP氧化硅的部分，从而产生用于所有氧化硅填充的平面顶表面形貌， 绝缘体区域。

    Phytochrome regulated transcription factor for control of higher plant development
    2.
    发明授权
    Phytochrome regulated transcription factor for control of higher plant development 失效
    植物色素调节转录因子，用于控制高等植物发育

    公开(公告)号：US06388172B1

    公开(公告)日：2002-05-14

    申请号：US08843572

    申请日：1997-04-18

    申请人： Elaine Tobin ,  Lin Sun ,  Zhi-yong Wang

    发明人： Elaine Tobin ,  Lin Sun ,  Zhi-yong Wang

    IPC分类号： C12P2106

    CPC分类号： C12N15/827 ,  C07K14/415 ,  C12N15/8261 ,  Y02A40/146

    摘要： The present invention involves the isolation and characterization of the first discovered phytochrome-regulated transcriptional factor, a protein designated CCA1 which binds to the promoter region of the chlorophyll binding protein gene (Lhcb1*3) of Arabidopsis. The Lhcb1*3 gene of Arabidopsis is known to be regulated by phytochrome in etiolated seedlings where a brief illumination by red light results in a large increase in the level of mRNA from this gene. A DNA binding activity, designated CA-1, that interacts with the promoter region of Lhcb1*3 was previously discovered in cellular extracts. This binding activity was used to obtain a cDNA clone for a transcription factor that binds specifically to the Lhcb1*3 promoter. Modification of the expression of CCA1 using techniques of genetic engineering results in unexpected changes in the timing of plant flowering. When CCA1 is overexpressed, it appears that the normal circadian rhythms of the plant are disrupted. The plants take a significantly longer time to reach flowering even in the presence of day length conditions that normally induce flowering. Thus, a method of extending vegetative growth and delaying flowering is provided.

    摘要翻译： 本发明涉及首次发现的植物色素调节转录因子的分离和表征，该转录因子是与拟南芥叶绿素结合蛋白基因（Lhcb1 * 3）的启动子区结合的称为CCA1的蛋白质。 已知拟南芥的Lhcb1 * 3基因是通过染色体幼苗中的植物色素调节的，其中通过红光的短暂照明导致来自该基因的mRNA水平的大量增加。 先前在细胞提取物中发现了与Lhcb1 * 3的启动子区域相互作用的DNA结合活性，命名为CA-1。 该结合活性用于获得特异性结合Lhcb1 * 3启动子的转录因子的cDNA克隆。 使用遗传工程技术改造CCA1的表达导致植物开花时间的意想不到的变化。 当CCA1过表达时，植物的正常昼夜节律似乎是中断的。 即使在通常诱导开花的日间长度条件的情况下，植物花费显着更长的时间来达到开花。 因此，提供了延长营养生长和延迟开花的方法。