Method for sputtering TiNi shape-memory alloys
    1.
    发明申请
    Method for sputtering TiNi shape-memory alloys 审中-公开
    溅射TiNi形状记忆合金的方法

    公开(公告)号:US20050159808A1

    公开(公告)日:2005-07-21

    申请号:US11027814

    申请日:2004-12-28

    摘要: A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0.5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

    摘要翻译: 公开了一种薄膜装置,例如血管内支架。 该装置由无定形的薄膜(i)形成,该薄膜(i)由溅射的镍钛诺形状记忆合金形成,其以奥氏体状态限定具有0.5-50微米厚度的开放内部体积,具有奥氏体光洁度 温度低于37℃; 并且在37℃下表现出大于3%的应力/应变恢复。该膨胀物可以以马氏体状态变形为基本上压实的构造,并且以其奥氏体状态呈现限定这种敞开的内部体积的形状。 还公开了一种用于形成该器件的溅射方法。

    THIN FILM SHAPE MEMORY ALLOY DEVICE AND METHOD
    3.
    发明申请
    THIN FILM SHAPE MEMORY ALLOY DEVICE AND METHOD 有权
    薄膜形状记忆合金装置及方法

    公开(公告)号:US20110253525A1

    公开(公告)日:2011-10-20

    申请号:US13171243

    申请日:2011-06-28

    IPC分类号: C23C14/35

    摘要: A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0.5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

    摘要翻译: 公开了一种薄膜装置,例如血管内支架。 该装置由无定形的薄膜形成(i)由溅射的镍钛诺形状记忆合金形成,其以奥氏体状态限定具有0.5-50微米厚度的开放内部体积,具有奥氏体光洁度 温度低于37℃。 并且在37℃下表现出大于3%的应力/应变恢复。该膨胀物可以以马氏体状态变形为基本上压实的构造,并且以其奥氏体状态呈现限定这种敞开的内部体积的形状。 还公开了一种用于形成该器件的溅射方法。

    ANEURYSM OCCLUSION SYSTEM AND METHOD
    5.
    发明申请
    ANEURYSM OCCLUSION SYSTEM AND METHOD 审中-公开
    ANEURYSM OCCLUSION系统和方法

    公开(公告)号:US20140180377A1

    公开(公告)日:2014-06-26

    申请号:US13722709

    申请日:2012-12-20

    IPC分类号: A61F2/07

    CPC分类号: A61B17/12118 A61B17/12172

    摘要: An aneurysm occlusion system includes devices positionable within a cerebral blood vessel covering a neck of an aneurysm in the blood vessel. A component device includes an expandable tubular body, an expandable anchor, and a link connecting the body to the anchor. One or more devices deployed using a method according to the invention includes a novel feature that guarantees that the distal high coverage segment aligns with the neck of the aneurysm. A single device or multiple devices, used in conjunction with an embolic material or coil, may be combined to form a system according to the invention. When positioned and deployed strategically either alone or with a second device utilizing a method according to the invention, the system has a high coverage region covering a neck of an aneurysm, and a gap between the system and healthy vessel. The system and method prevent blood flow into an aneurysm while permitting blood flow through healthy vessel.

    摘要翻译: 动脉瘤闭塞系统包括可覆盖在血管内的动脉瘤颈部的脑血管内的装置。 部件装置包括可膨胀管状体,可膨胀锚,以及将主体连接到锚固件的连杆。 使用根据本发明的方法部署的一个或多个装置包括保证远端高覆盖段与动脉瘤颈部对准的新颖特征。 与栓塞材料或线圈结合使用的单个装置或多个装置可以组合以形成根据本发明的系统。 当采用根据本发明的方法单独或利用第二装置进行定位和部署时,系统具有覆盖动​​脉瘤颈部的高覆盖区域以及系统与健康血管之间的间隙。 该系统和方法防止血液流入动脉瘤,同时允许血液流经健康血管。

    System and method for treating ischemic stroke
    7.
    发明授权
    System and method for treating ischemic stroke 有权
    缺血性脑卒中治疗系统及方法

    公开(公告)号:US08366735B2

    公开(公告)日:2013-02-05

    申请号:US11210634

    申请日:2005-08-24

    IPC分类号: A61M29/00 A61B17/22

    摘要: A thromboembolic removal system for treating ischemic stroke includes an aspiration catheter and an elongate member having a separator on a distal portion of the elongate member. During use of the thromboembolic removal system, the aspiration catheter and elongate member are positioned in a blood vessel, with the elongate member extending through the lumen of the aspiration catheter. Vacuum is applied through the aspiration catheter and the separator is deployed distal to the aspiration catheter into contact with thromboembolic material within a blood vessel. Manipulation of the separator during aspiration can facilitate aspiration by loosening, separating, or softening pieces of thromboembolic material, by removing any clogs or flow restrictions within the lumen of the aspiration catheter, and/or by pushing or plunging loosened material towards and/or into the distal end of the aspiration catheter for subsequent aspiration out of the body.

    摘要翻译: 用于治疗缺血性中风的血栓栓塞去除系统包括抽吸导管和在细长构件的远端部分上具有隔离物的细长构件。 在血栓栓塞去除系统的使用期间,吸引导管和细长构件定位在血管中,细长构件延伸穿过抽吸导管的内腔。 通过抽吸导管施加真空,并且将分离器部署在吸引导管远端与血管内的血栓栓塞材料接触。 抽吸期间分离器的操纵可以通过松开,分离或软化血栓栓塞材料片来促进抽吸,通过去除吸引导管的内腔内的任何堵塞物或流动限制,和/或通过将松动的材料推向或插入到/ 吸引导管的远端用于随后抽出身体。

    Thin-Film Shape Memory Alloy Device and Method
    9.
    发明申请
    Thin-Film Shape Memory Alloy Device and Method 有权
    薄膜形状记忆合金装置及方法

    公开(公告)号:US20090183986A1

    公开(公告)日:2009-07-23

    申请号:US12357104

    申请日:2009-01-21

    IPC分类号: C23C14/34

    摘要: A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0 5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

    摘要翻译: 公开了一种薄膜装置,例如血管内支架。 该装置由无定形的薄膜(i)形成,该薄膜(i)由溅射的镍钛诺形状记忆合金形成,其以奥氏体状态限定具有0-50微米厚度的开放内部体积,具有奥氏体 完成温度低于37°C。 并且在37℃下表现出大于3%的应力/应变恢复。该膨胀物可以以马氏体状态变形为基本上压实的构造,并且以其奥氏体状态呈现限定这种敞开的内部体积的形状。 还公开了一种用于形成该器件的溅射方法。