公开(公告)号：US20190273040A1

公开(公告)日：2019-09-05

申请号：US16419668

申请日：2019-05-22

Applicant: ABB Schweiz AG ,  Audi AG

Inventor： Fabian Mohn ,  Chunlei Liu ,  Jürgen Schuderer

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

Abstract: A semi-manufactured power semiconductor module includes a substrate for bonding at least one power semiconductor chip; a first leadframe bonded to the substrate and providing power terminals; and a second leadframe bonded to the substrate and providing auxiliary terminals; wherein the first leadframe and/or the second leadframe include an interlocking element adapted for aligning the first leadframe and the second leadframe with respect to each other and/or with respect to a mold for molding an encapsulation around the substrate, the first leadframe and the second leadframe.

公开(公告)号：US11189556B2

公开(公告)日：2021-11-30

申请号：US16419668

申请日：2019-05-22

Applicant: ABB Schweiz AG ,  Audi AG

Inventor： Fabian Mohn ,  Chunlei Liu ,  Jürgen Schuderer

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495

Abstract: A semi-manufactured power semiconductor module includes a substrate for bonding at least one power semiconductor chip; a first leadframe bonded to the substrate and providing power terminals; and a second leadframe bonded to the substrate and providing auxiliary terminals; wherein the first leadframe and/or the second leadframe include an interlocking element adapted for aligning the first leadframe and the second leadframe with respect to each other and/or with respect to a mold for molding an encapsulation around the substrate, the first leadframe and the second leadframe.

公开(公告)号：US20200059155A1

公开(公告)日：2020-02-20

申请号：US16663868

申请日：2019-10-25

Applicant: ABB Schweiz AG

Inventor： Uwe Drofenik ,  Francisco Canales ,  Chunlei Liu ,  Franziska Brem

IPC: H02M1/32 ,  H03K17/567 ,  H03K17/687 ,  H01L25/065

Abstract: A power module included a plurality of normally-on semiconductor switches based on a wide bandgap substrate, the normally-on semiconductor switches connected in parallel; and a balancing unit including a capacitor and a balancing semiconductor switch connected in series, which are connected in parallel to the normally-on semiconductor switches.

公开(公告)号：US20190355634A1

公开(公告)日：2019-11-21

申请号：US16529295

申请日：2019-08-01

Applicant: ABB Schweiz AG

Inventor： Chunlei Liu ,  Juergen Schuderer ,  Franziska Brem ,  Munaf Rahimo ,  Peter Karl Steimer ,  Franc Dugal

IPC: H01L23/051 ,  H01L23/62 ,  H01L23/492 ,  H01L23/00 ,  H01L25/07 ,  H01L29/16

Abstract: A power semiconductor device includes a base plate; a Si chip including a Si substrate, the Si chip attached to the base plate; a first metal preform pressed with a first press pin against the Si chip; a wide bandgap material chip comprising a wide bandgap substrate and a semiconductor switch provided in the wide bandgap substrate, the wide bandgap material chip attached to the base plate; and a second metal preform pressed with a second press pin against the wide bandgap material chip; the Si chip and the wide bandgap material chip are connected in parallel via the base plate and via the first press pin and the second press pin; the first metal preform is adapted for forming a conducting path through the Si chip, when heated by an overcurrent; and the second metal preform is adapted for forming an temporary conducting path through the wide bandgap material chip or an open circuit, when heated by an overcurrent.

公开(公告)号：US10797586B2

公开(公告)日：2020-10-06

申请号：US16663868

申请日：2019-10-25

Applicant: ABB Schweiz AG

Inventor： Uwe Drofenik ,  Francisco Canales ,  Chunlei Liu ,  Franziska Brem

IPC: H02M1/32 ,  H01L25/065 ,  H03K17/567 ,  H03K17/687

Abstract: A power module included a plurality of normally-on semiconductor switches based on a wide bandgap substrate, the normally-on semiconductor switches connected in parallel; and a balancing unit including a capacitor and a balancing semiconductor switch connected in series, which are connected in parallel to the normally-on semiconductor switches.

公开(公告)号：US20190355633A1

公开(公告)日：2019-11-21

申请号：US16528791

申请日：2019-08-01

Applicant: ABB Schweiz AG

Inventor： Chunlei Liu ,  Franc Dugal ,  Munaf Rahimo ,  Peter Karl Steimer

IPC: H01L23/051 ,  H01L23/62 ,  H01L25/07 ,  H01L23/492 ,  H02H3/08 ,  H02H3/02

Abstract: A power semiconductor device includes a Si chip providing a Si switch and a wide bandgap material chip providing a wide bandgap material switch, wherein the Si switch and the wide bandgap material switch are electrically connected in parallel. A method for controlling a power semiconductor device includes: during a normal operation mode, controlling at least the wide bandgap material switch for switching a current through the power semiconductor device by applying corresponding gate signals to at least the wide bandgap material switch; sensing a failure in the power semiconductor device; and, in the case of a sensed failure, controlling the Si switch by applying a gate signal, such that a current is generated in the Si chip heating the Si chip to a temperature forming a permanent conducting path through the Si chip.