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公开(公告)号:US20170194826A1
公开(公告)日:2017-07-06
申请号:US15461676
申请日:2017-03-17
Applicant: ABB Schweiz AG
Inventor: Andrej Krivda , Chau-Hon Ho , Cherif Ghoul , Jan Van-Loon , Lei Xie , Spiros Tzavalas
CPC classification number: H02K3/30 , H01B3/306 , H01B3/308 , H01B3/441 , H01B3/443 , H01B3/46 , H01B7/02 , H01B13/06 , H02K3/40
Abstract: It is proposed a wound conductor arrangement for an electrical machine: the wound conductor includes ma wound conductor comprising an electrically conductive material having an electrical conductivity value, and an insulation layer being at least partially provided around the wound conductor by a shrinkable tube comprising insulating material. The wound conductor arrangement further includes an intermediate layer provided between the wound conductor and the insulation layer. The intermediate layer has a conductivity value less than the conductivity value of the wound conductor. Further, an electric machine is proposed including the wound conductor arrangement. A method is described for insulating a wound conductor for an electrical machine.
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公开(公告)号:US20180191142A1
公开(公告)日:2018-07-05
申请号:US15740518
申请日:2015-07-06
Applicant: ABB SCHWEIZ AG
Inventor: Dariusz Bednarowski , Emmanuel Logakis , Jörn Antonischki , Julita Krol , Lei Xie , Nikolaus Zant
CPC classification number: H02G1/145 , B29C45/14549 , B29C45/1671 , B29C45/2673 , B29C45/2708 , B29C45/28 , B29C2045/2714 , H01B9/027 , H01B13/06 , H01L21/0243 , H01L23/142
Abstract: A method of building an insulation system around a naked conductor section of a power cable. The insulation system includes an inner semiconducting layer arranged around the conductor, an insulation layer arranged around the inner semiconducting layer, and an outer semiconducting layer arranged around the insulation layer. The method includes: a) placing the naked conductor section in a mold, and b) molding an insulation system around the naked conductor section, wherein the molding of the insulation system involves injecting a first semiconducting compound into a first mold cavity to form an inner semiconducting layer around the naked conductor section, injecting an insulation compound into a second mold cavity to form an insulation layer around the inner semiconducting layer, and injecting a second semiconducting compound into a third mold cavity to form an outer semiconducting layer around the insulation layer.
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