公开(公告)号：US20150132867A1

公开(公告)日：2015-05-14

申请号：US14494449

申请日：2014-09-23

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Yu-Cheng TSAO ,  Cheng-Hung WANG ,  Chun-Chieh LIN ,  Hsiu-Hsiung YANG ,  Yu-Pin TSAI

IPC: H01L21/66 ,  H01L21/78

CPC classification number: H01L22/14 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/014

Abstract: The present disclosure relates to a semiconductor process, which includes: (a) providing a semiconductor element; (b) attaching the semiconductor element to a carrier by an adhesive layer, so that the adhesive layer is sandwiched between the semiconductor element and the carrier; and (c) cutting the semiconductor element to form a plurality of semiconductor units. Thereby, the gaps between the semiconductor units are fixed after the cutting process, so as to facilitate testing the semiconductor units.

Abstract translation: 本公开涉及一种半导体工艺，其包括：（a）提供半导体元件; （b）通过粘合剂层将半导体元件附着到载体上，使得粘合剂层夹在半导体元件和载体之间; 和（c）切割半导体元件以形成多个半导体单元。 由此，半导体单元之间的间隙在切割处理之后被固定，以便于半导体单元的测试。

公开(公告)号：US20170125310A1

公开(公告)日：2017-05-04

申请号：US15409434

申请日：2017-01-18

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Yu-Cheng TSAO ,  Cheng-Hung WANG ,  Chun-Chieh LIN ,  Hsiu-Hsiung YANG ,  Yu-Pin TSAI

IPC: H01L21/66 ,  H01L21/683 ,  H01L21/78

CPC classification number: H01L22/14 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/014

Abstract: The present disclosure relates to a semiconductor process, which includes: (a) providing a semiconductor element; (b) attaching the semiconductor element to a carrier by an adhesive layer, so that the adhesive layer is sandwiched between the semiconductor element and the carrier; and (c) cutting the semiconductor element to form a plurality of semiconductor units. Thereby, the gaps between the semiconductor units are fixed after the cutting process, so as to facilitate testing the semiconductor units.