公开(公告)号：US20250147407A1

公开(公告)日：2025-05-08

申请号：US19013708

申请日：2025-01-08

Applicant: AGC Inc.

Inventor： Hiroaki ITO ,  Daijiro Akagi ,  Taiga Fudetani

IPC: G03F1/24 ,  G03F1/40 ,  G03F1/48 ,  G03F1/58

Abstract: Provided is a reflective mask blank that is small in processing error in charged particle beam processing. A reflective mask blank (10a) includes a substrate (11), a multilayer reflective film (12) for reflecting EUV light, a protective film (13) and an absorber film (14) having a single-layer structure or a multilayer structure, wherein: any layer between the protective film (13) and the outermost layer located on the outermost side of the reflective mask blank (10a) opposite from the substrate (11) is an insulating layer having a sheet resistance of 1.0×103 Ω/sq. or higher; and an internal electrical resistance between a surface of the outermost layer opposite from the substrate (11) and the protective film (13) is 100 kΩ or lower.