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公开(公告)号:US20250036020A1
公开(公告)日:2025-01-30
申请号:US18911231
申请日:2024-10-09
Applicant: AGC Inc.
Inventor: Wataru NISHIDA , Daijiro AKAGI , Hiroaki IWAOKA , Hiroshi HANEKAWA , Taiga FUDETANI , Masaru HORI , Takayoshi TSUTSUMI
Abstract: A reflective mask blank includes: a substrate, a multilayer reflective film including molybdenum layers and silicon layers alternately and being configured to reflect EUV light, an intermediate film, a protective film, and an absorber film, in this order, in which the intermediate film includes silicon and nitrogen, an atomic weight ratio of a content of the nitrogen to a content of the silicon is 0.22 to 0.40 or 0.15 or less, the protective film includes one or more layers selected from the group consisting of a layer including rhodium and a layer including a rhodium-containing material, and the rhodium-containing material includes rhodium and one or more elements selected from the group consisting of boron, carbon, nitrogen, oxygen, silicon, titanium, zirconium, niobium, molybdenum, ruthenium, palladium, tantalum, and iridium.
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公开(公告)号:US20240231215A9
公开(公告)日:2024-07-11
申请号:US18403811
申请日:2024-01-04
Applicant: AGC Inc.
Inventor: Wataru NISHIDA , Masaru HORI , Takayoshi TSUTSUMI
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank includes: a substrate; a Mo/Si multilayer reflection layer formed by alternately laminating a molybdenum (Mo) layer and a silicon (Si) layer on or above the substrate; an intermediate layer on or above the Mo/Si multilayer reflection layer; a barrier layer on or above the intermediate layer; a protective layer on or above the barrier layer; and an absorption layer on or above the protective layer.
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公开(公告)号:US20240134267A1
公开(公告)日:2024-04-25
申请号:US18403811
申请日:2024-01-04
Applicant: AGC Inc.
Inventor: Wataru NISHIDA , Masaru HORI , Takayoshi TSUTSUMI
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank includes: a substrate; a Mo/Si multilayer reflection layer formed by alternately laminating a molybdenum (Mo) layer and a silicon (Si) layer on or above the substrate; an intermediate layer on or above the Mo/Si multilayer reflection layer; a barrier layer on or above the intermediate layer; a protective layer on or above the barrier layer; and an absorption layer on or above the protective layer.
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