公开(公告)号：US20240427227A1

公开(公告)日：2024-12-26

申请号：US18823099

申请日：2024-09-03

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Hiroaki IWAOKA ,  Wataru NISHIDA ,  Ichiro ISHIKAWA ,  Kenichi SASAKI

IPC: G03F1/24

Abstract: A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition k

公开(公告)号：US20240231215A9

公开(公告)日：2024-07-11

申请号：US18403811

申请日：2024-01-04

Applicant: AGC Inc.

Inventor： Wataru NISHIDA ,  Masaru HORI ,  Takayoshi TSUTSUMI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask blank includes: a substrate; a Mo/Si multilayer reflection layer formed by alternately laminating a molybdenum (Mo) layer and a silicon (Si) layer on or above the substrate; an intermediate layer on or above the Mo/Si multilayer reflection layer; a barrier layer on or above the intermediate layer; a protective layer on or above the barrier layer; and an absorption layer on or above the protective layer.

公开(公告)号：US20240134267A1

公开(公告)日：2024-04-25

申请号：US18403811

申请日：2024-01-04

Applicant: AGC Inc.

Inventor： Wataru NISHIDA ,  Masaru HORI ,  Takayoshi TSUTSUMI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask blank includes: a substrate; a Mo/Si multilayer reflection layer formed by alternately laminating a molybdenum (Mo) layer and a silicon (Si) layer on or above the substrate; an intermediate layer on or above the Mo/Si multilayer reflection layer; a barrier layer on or above the intermediate layer; a protective layer on or above the barrier layer; and an absorption layer on or above the protective layer.

公开(公告)号：US20250036020A1

公开(公告)日：2025-01-30

申请号：US18911231

申请日：2024-10-09

Applicant: AGC Inc.

Inventor： Wataru NISHIDA ,  Daijiro AKAGI ,  Hiroaki IWAOKA ,  Hiroshi HANEKAWA ,  Taiga FUDETANI ,  Masaru HORI ,  Takayoshi TSUTSUMI

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54

Abstract: A reflective mask blank includes: a substrate, a multilayer reflective film including molybdenum layers and silicon layers alternately and being configured to reflect EUV light, an intermediate film, a protective film, and an absorber film, in this order, in which the intermediate film includes silicon and nitrogen, an atomic weight ratio of a content of the nitrogen to a content of the silicon is 0.22 to 0.40 or 0.15 or less, the protective film includes one or more layers selected from the group consisting of a layer including rhodium and a layer including a rhodium-containing material, and the rhodium-containing material includes rhodium and one or more elements selected from the group consisting of boron, carbon, nitrogen, oxygen, silicon, titanium, zirconium, niobium, molybdenum, ruthenium, palladium, tantalum, and iridium.

公开(公告)号：US20240272541A1

公开(公告)日：2024-08-15

申请号：US18444020

申请日：2024-02-16

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Hiroaki IWAOKA ,  Wataru NISHIDA ,  Ichiro ISHIKAWA ,  Kenichi SASAKI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition


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