-
Patent Agency Ranking
公开(公告)号：US20250015144A1
公开(公告)日：2025-01-09
申请号：US18894828
申请日：2024-09-24
Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM , AGC Inc.
Inventor： Masaru HORI , Osamu ODA , Arun Kumar DHASIYAN , Atsushi HAYASHI , Nobutaka AOMINE
Abstract: A substrate with a β-gallium oxide film includes a Si single crystal substrate and a β-gallium oxide film provided on the Si single crystal substrate. A substrate with a β-gallium oxide film includes a gallium nitride single crystal substrate and a β-gallium oxide film provided on the gallium nitride single crystal substrate.
-
公开(公告)号：US20240231215A9
公开(公告)日：2024-07-11
申请号：US18403811
申请日：2024-01-04
Applicant: AGC Inc.
Inventor： Wataru NISHIDA , Masaru HORI , Takayoshi TSUTSUMI
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank includes: a substrate; a Mo/Si multilayer reflection layer formed by alternately laminating a molybdenum (Mo) layer and a silicon (Si) layer on or above the substrate; an intermediate layer on or above the Mo/Si multilayer reflection layer; a barrier layer on or above the intermediate layer; a protective layer on or above the barrier layer; and an absorption layer on or above the protective layer.
-
公开(公告)号：US20240134267A1
公开(公告)日：2024-04-25
申请号：US18403811
申请日：2024-01-04
Applicant: AGC Inc.
Inventor： Wataru NISHIDA , Masaru HORI , Takayoshi TSUTSUMI
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank includes: a substrate; a Mo/Si multilayer reflection layer formed by alternately laminating a molybdenum (Mo) layer and a silicon (Si) layer on or above the substrate; an intermediate layer on or above the Mo/Si multilayer reflection layer; a barrier layer on or above the intermediate layer; a protective layer on or above the barrier layer; and an absorption layer on or above the protective layer.
-
公开(公告)号：US20250034752A1
公开(公告)日：2025-01-30
申请号：US18894708
申请日：2024-09-24
Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM , AGC Inc.
Inventor： Masaru HORI , Osamu Oda , Arun Kumar Dhasiyan , Atsushi Hayashi , Nobutaka Aomine
Abstract: A gallium oxide film production apparatus includes: a reaction chamber; a substrate disposition portion located in the reaction chamber and configured to dispose a substrate for growing a gallium oxide; a gallium element supply device configured to supply a gallium element to the substrate disposition portion; an oxygen element supply device configured to supply oxygen constituent particles to the substrate disposition portion; and a mixed gas supply device configured to supply a mixed gas containing oxygen and ozone to the oxygen element supply device. The oxygen element supply device includes a plasma generation unit configured to generate plasma from the mixed gas.
-
公开(公告)号：US20250036020A1
公开(公告)日：2025-01-30
申请号：US18911231
申请日：2024-10-09
Applicant: AGC Inc.
Inventor： Wataru NISHIDA , Daijiro AKAGI , Hiroaki IWAOKA , Hiroshi HANEKAWA , Taiga FUDETANI , Masaru HORI , Takayoshi TSUTSUMI
Abstract: A reflective mask blank includes: a substrate, a multilayer reflective film including molybdenum layers and silicon layers alternately and being configured to reflect EUV light, an intermediate film, a protective film, and an absorber film, in this order, in which the intermediate film includes silicon and nitrogen, an atomic weight ratio of a content of the nitrogen to a content of the silicon is 0.22 to 0.40 or 0.15 or less, the protective film includes one or more layers selected from the group consisting of a layer including rhodium and a layer including a rhodium-containing material, and the rhodium-containing material includes rhodium and one or more elements selected from the group consisting of boron, carbon, nitrogen, oxygen, silicon, titanium, zirconium, niobium, molybdenum, ruthenium, palladium, tantalum, and iridium.
-
-
-
-
Search Results
5
records
(took 0.01 seconds)
