公开(公告)号：US20240280890A1

公开(公告)日：2024-08-22

申请号：US18648522

申请日：2024-04-29

Applicant: AGC Inc.

Inventor： Takuma KATO ,  Daijiro AKAGI ,  Takeshi OKATO ,  Ryusuke OISHI ,  Yusuke ONO

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

公开(公告)号：US20240419063A1

公开(公告)日：2024-12-19

申请号：US18820061

申请日：2024-08-29

Applicant: AGC Inc.

Inventor： Takeshi OKATO

IPC: G03F1/24

Abstract: A reflective mask blank, which is a binary reflective mask blank, includes, in order: a substrate; a multilayer reflective film configured to reflect EUV light; and a pattern film. The pattern film has a laminated structure including a total of L layers each having a different refractive index where L is a natural number of 2 or more. When an absorption coefficient of an i-th layer in the pattern film from a side opposite to the substrate is defined as ki, a thickness of the i-th layer in the pattern film from the side opposite to the substrate is defined as di (nm), a total thickness of the pattern film is defined as d, an exposure wavelength is defined as λ (nm), and Pi is defined as 1−exp(−2π/λ*diki), the following formula (1) is satisfied. ∑ i = 1 L ( Pi / d ) > 0.012 ( 1 )

公开(公告)号：US20240045320A1

公开(公告)日：2024-02-08

申请号：US18382356

申请日：2023-10-20

Applicant: AGC Inc.

Inventor： Takuma KATO ,  Daijiro AKAGI ,  Takeshi OKATO ,  Ryusuke OISHI ,  Yusuke ONO

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/52 ,  G03F1/48 ,  G03F1/78 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/54 ,  G03F1/52 ,  G03F1/48 ,  G03F1/78 ,  G03F1/80

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.