公开(公告)号：US10204831B2

公开(公告)日：2019-02-12

申请号：US14861821

申请日：2015-09-22

申请人： ALTA DEVICES, Inc.

发明人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Andreas Hegedus

IPC分类号： H01L21/683 ,  H01L21/78 ,  H01L21/67 ,  H01L21/306 ,  H01L31/18

摘要： Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.

公开(公告)号：US10337087B2

公开(公告)日：2019-07-02

申请号：US15876001

申请日：2018-01-19

申请人： ALTA DEVICES, INC.

发明人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Siew Neo

IPC分类号： C22C29/00 ,  C30B33/06 ,  C30B29/42 ,  C30B29/40 ,  C30B33/08 ,  C30B29/00 ,  C30B33/10

摘要： Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of at 0°.

公开(公告)号：US09679814B2

公开(公告)日：2017-06-13

申请号：US14723223

申请日：2015-05-27

申请人： ALTA DEVICES, Inc.

发明人： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

IPC分类号： H01L21/78 ,  H01L21/683 ,  H01L21/02 ,  H01L21/306

CPC分类号： H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.