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    Optoelectronic devices including heterojunction and intermediate layer
    1.
    发明授权
    Optoelectronic devices including heterojunction and intermediate layer 有权

    公开(公告)号：US10916676B2

    公开(公告)日：2021-02-09

    申请号：US15958844

    申请日：2018-04-20

    申请人： Alta Devices, Inc.

    发明人： Brendan M. Kayes ,  Hui Nie ,  Isik C. Kizilyalli

    IPC分类号： H01L31/0735 ,  H01L31/0224 ,  H01L31/18

    摘要： Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.

    FRONT METAL CONTACT STACK
    2.
    发明申请
    FRONT METAL CONTACT STACK 审中-公开

    公开(公告)号：US20200313007A1

    公开(公告)日：2020-10-01

    申请号：US16370473

    申请日：2019-03-29

    申请人： ALTA DEVICES, INC.

    发明人： Abraham SALDIVAR-VALDES ,  Octavi Santiago Escala SEMONIN

    IPC分类号： H01L31/02 ,  H01L31/06

    摘要： A photovoltaic device and a method of forming a contact stack of the photovoltaic device are disclosed. The photovoltaic device may include a first layer deposited on a semiconductor layer including a compound semiconductor material. The photovoltaic device may also include a dopant layer comprising tin (Sn) deposited on the first layer. The photovoltaic device may further include a conductive layer deposited or provided over the dopant layer to form a contact stack with the first layer and the dopant layer.

    METHODS AND SYSTEMS FOR ALIGNMENT TO EMBEDDED PATTERNS IN SEMICONDUCTOR DEVICE PROCESSING
    3.
    发明申请
    METHODS AND SYSTEMS FOR ALIGNMENT TO EMBEDDED PATTERNS IN SEMICONDUCTOR DEVICE PROCESSING 审中-公开

    公开(公告)号：US20200286765A1

    公开(公告)日：2020-09-10

    申请号：US16809911

    申请日：2020-03-05

    申请人： Alta Devices, Inc.

    发明人： Borirak OPASANONT ,  Abraham SALDIVAR-VALDES ,  Daniel G. PATTERSON

    IPC分类号： H01L21/68 ,  H01L21/66 ,  H01L23/544

    摘要： Aspects of the present disclosure include methods, apparatuses, and computer readable media for emitting an incident light toward a semiconductor layer of a semiconductor device, wherein the incident light is a sub-bandgap light substantially transparent to the semiconductor layer, detecting a reflected light generated from the incident light penetrating through the semiconductor layer of the semiconductor device and reflecting off of a portion of the semiconductor device, identifying a macroscopic feature underneath the semiconductor layer based on the reflected light, wherein the macroscopic feature corresponds to the portion of the semiconductor device and is visible to the naked eye, and performing an alignment procedure by using the identified macroscopic feature as a reference for the alignment procedure.

    ENERGY DEVICE FOR USE IN ELECTRONIC DEVICES
    4.
    发明申请
    ENERGY DEVICE FOR USE IN ELECTRONIC DEVICES 审中-公开

    公开(公告)号：US20200252025A1

    公开(公告)日：2020-08-06

    申请号：US16264324

    申请日：2019-01-31

    申请人： Alta Devices, Inc.

    发明人： Aarohi Surya VIJH

    IPC分类号： H02S30/00 ,  H02S10/20 ,  H02S40/30

    摘要： The present disclosure describes an energy device with a solar module having a form factor configured to be inserted into and to match an inner portion of a coin-type cell holder of an electronic device. The solar module includes one or more photovoltaic cells to capture energy from ambient light and a pair of electrodes. The energy device may be configured to provide, to the electronic device via contact with the coin-type cell holder, electric energy produced from the ambient light energy. The solar module may include a converter module to convert the ambient light energy into the electric energy. The energy device may also include an energy storage module and/or a power management module that are stackable below the solar module with electrical connectivity to the solar module, and that combined with the solar module have the appropriate form factor for the coin-type cell holder.

    SYSTEMS AND METHODS FOR SHINGLING CELLS USING AN ADHESIVE FILM
    5.
    发明申请
    SYSTEMS AND METHODS FOR SHINGLING CELLS USING AN ADHESIVE FILM 审中-公开

    公开(公告)号：US20200243704A1

    公开(公告)日：2020-07-30

    申请号：US16257569

    申请日：2019-01-25

    申请人： Alta Devices, Inc.

    发明人： Todd Allen KRAJEWSKI ,  Jason TOLENTINO

    IPC分类号： H01L31/048 ,  H01L31/05 ,  H01L31/18 ,  C09J7/38

    摘要： This disclosure describes various structures, devices, and arrangements that replace a PSA used to hold shingled cells together with an adhesive film. For example, in an aspect, the present disclosure is directed to a shingled arrangement of photovoltaic (PV) cells. In some aspects, the shingled arrangement of PV cells may include a first PV cell, a second PV cell, and an adhesive film placed between a backside the first PV cell and a front side of the second PV cell. The adhesive film may be thermally bonded to the first PV cell and to the second PV cell after the application of localized heat and pressure and holds the first PV cell and the second PV cell together. Additionally, a bus bar of the second PV cell may be electrically connected to the first PV cell by a conductive via formed through the adhesive film.

    SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES
    6.
    发明申请
    SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES 审中-公开

    公开(公告)号：US20190181281A1

    公开(公告)日：2019-06-13

    申请号：US16277749

    申请日：2019-02-15

    申请人： Alta Devices, Inc.

    发明人： Andrew J. RITENOUR ,  Brendan M. KAYES ,  Hui NIE ,  Isik KIZILYALLI

    IPC分类号： H01L31/0304 ,  H01L31/0735 ,  H01L27/142 ,  H01L31/0443

    摘要： Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide and an emitter layer. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect. The absorber or base layer has a grading in doping concentration from a first doping level closest to the emitter layer to a second doping level away from the emitter layer, the second doping level being greater than the first doping level.

    Tape-based epitaxial lift off apparatuses and methods
    7.
    发明授权
    Tape-based epitaxial lift off apparatuses and methods 有权

    公开(公告)号：US10204831B2

    公开(公告)日：2019-02-12

    申请号：US14861821

    申请日：2015-09-22

    申请人： ALTA DEVICES, Inc.

    发明人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Andreas Hegedus

    IPC分类号： H01L21/683 ,  H01L21/78 ,  H01L21/67 ,  H01L21/306 ,  H01L31/18

    摘要： Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.

    MOVABLE LINER ASSEMBLY FOR A DEPOSITION ZONE IN A CVD REACTOR
    9.
    发明申请
    MOVABLE LINER ASSEMBLY FOR A DEPOSITION ZONE IN A CVD REACTOR 审中-公开

    公开(公告)号：US20180251897A1

    公开(公告)日：2018-09-06

    申请号：US15971571

    申请日：2018-05-04

    申请人： Alta Devices, Inc.

    发明人： Gregg HIGASHI ,  Khurshed SORABJI ,  Lori D. WASHINGTON

    IPC分类号： C23C16/455 ,  C23C16/48 ,  C23C16/458

    CPC分类号： C23C16/45565 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/481

    摘要： A chemical vapor deposition (CVD) reactor comprises a deposition zone, a substrate carrier and a liner assembly. The deposition zone is constructed so as to have a positive pressure reactant gases fixed showerhead introducing reactant gas supporting thin film CVD deposition. The substrate carrier movably supports a substrate and the liner assembly within the deposition zone and is heated so as to be subjected to a CVD process. The liner assembly partly encloses selected portions of the deposition zone, particularly portions of the substrate carrier and thereby enclose a hot zone surrounding a substrate to be processed so as to retain heat in that zone but allows gas flow radially outwardly toward walls of a surrounding cold-wall reactor with exhaust ports surrounding the deposition zone that exhaust spent reactant gases. The liner assembly is a sink for solid reaction byproducts while gaseous reaction byproducts are pumped out at the exhaust ports. The liner assembly is linearly movable away from the fixed showerhead.