公开(公告)号：US20240290583A1

公开(公告)日：2024-08-29

申请号：US18572729

申请日：2022-06-29

Applicant: AMOSENSE CO.,LTD

Inventor： Ji Hyung LEE

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01J37/32477 ,  H01L21/6833 ,  H01J37/32807 ,  H01J2237/002 ,  H01J2237/2007

Abstract: An electrostatic chuck is provided. Implemented according to an embodiment of the present invention is an electrostatic chuck comprising: a silicon nitride sintered body; a silicon carbide (SiC) surface modification layer covering at least a portion of the external surface of the silicon nitride sintered body and having corrosion resistance and plasma resistance; and an electrostatic electrode laid inside the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body of silicon nitride, and thus has excellent plasma resistance, chemical resistance, and thermal shock resistance while exhibiting an equivalent or similar level of heat dissipation performance compared to ceramic sintered bodies of aluminum nitride that have been conventionally widely used, so that the electrostatic chuck can be widely used in semiconductor processes.

公开(公告)号：US20240239716A1

公开(公告)日：2024-07-18

申请号：US18562171

申请日：2022-05-23

Applicant: AMOSENSE CO.,LTD

Inventor： Ji Hyung LEE

IPC: C04B41/50 ,  C04B35/584 ,  C04B35/626 ,  C04B35/632 ,  C04B41/00 ,  C04B41/45 ,  C04B41/87 ,  H01J37/32 ,  H01L21/683 ,  H05B3/26

CPC classification number: C04B41/5045 ,  C04B35/584 ,  C04B35/6261 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/632 ,  C04B41/0036 ,  C04B41/4529 ,  C04B41/5031 ,  C04B41/87 ,  H01J37/32724 ,  H01L21/6833 ,  H05B3/265 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6584 ,  C04B2235/9607 ,  C04B2235/9669 ,  H01J2237/2007

Abstract: An electrostatic chuck is provided. Implemented according to an embodiment of the present invention is an electrostatic chuck comprising: a silicon nitride sintered body; a surface modification layer covering at least a portion of the external surface of the silicon nitride sintered body and having corrosion resistance and plasma resistance; and an electrostatic electrode laid inside the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body of silicon nitride, and thus has excellent plasma resistance, chemical resistance, and thermal shock resistance while exhibiting an equivalent or similar level of heat dissipation performance compared to ceramic sintered bodies of aluminum nitride that have been conventionally widely used, so that the electrostatic chuck can be widely used in semiconductor processes.

公开(公告)号：US20240178039A1

公开(公告)日：2024-05-30

申请号：US18282600

申请日：2022-03-18

Applicant: AMOSENSE CO.,LTD

Inventor： Ji Hyung LEE ,  Kyung Whan WOO ,  Byoung Su JIN ,  Young Jun AN

IPC: H01L21/683 ,  C04B35/591 ,  C04B37/02 ,  H05B3/28

CPC classification number: H01L21/6833 ,  C04B35/591 ,  C04B37/02 ,  H05B3/283 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3873 ,  C04B2235/428 ,  C04B2235/9607 ,  C04B2237/368 ,  C04B2237/68

Abstract: An electrostatic chuck is provided. An electrostatic chuck is implemented by comprising a silicon nitride sintered body and an electrostatic electrode embedded in the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body, which is silicon nitride, to have excellent plasma resistance, chemical resistance and thermal shock resistance while exhibiting heat dissipation performance of a level equivalent or similar to that of an aluminum nitride ceramic sintered body, which has been conventionally and widely used, and thus can be widely used in a semiconductor process.

公开(公告)号：US20220240389A1

公开(公告)日：2022-07-28

申请号：US17611813

申请日：2020-05-14

Applicant: AMOSENSE CO.,LTD

Inventor： Kyung Whan WOO ,  Ji Hyung LEE

IPC: H05K3/20 ,  H01L21/48

Abstract: Disclosed is a ceramic substrate manufacturing method in which a copper sheet is etched and then bonded to a ceramic substrate, so that the ceramic substrate has reduced to overall processing time and improved reliability and product lifespan. The disclosed ceramic substrate manufacturing method comprises the steps of: etching a copper sheet so as to prepare a metal substrate; etching a ceramic substrate so as to prepare a unit ceramic substrate; assembling the metal substrate and the unit ceramic substrate; bonding the metal substrate and the unit ceramic substrate so as to form a stack; partially printing a metal paste on the surface of the stack; and sintering the metal paste.