公开(公告)号：US09293384B2

公开(公告)日：2016-03-22

申请号：US13522218

申请日：2011-01-13

申请人： Yuusaku Ishimine ,  Masayuki Moriyama ,  Kenji Komatsubara

发明人： Yuusaku Ishimine ,  Masayuki Moriyama ,  Kenji Komatsubara

IPC分类号： H01L23/15 ,  H05K7/20 ,  H05K1/00 ,  B32B33/00 ,  H01L23/13 ,  H01L35/32 ,  C04B35/587 ,  C04B37/02 ,  H05K1/03 ,  H05K3/38

CPC分类号： H01L23/13 ,  C04B35/587 ,  C04B37/026 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/5276 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/6581 ,  C04B2235/6582 ,  C04B2235/6587 ,  C04B2235/721 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/945 ,  C04B2235/9607 ,  C04B2237/125 ,  C04B2237/368 ,  C04B2237/407 ,  C04B2237/74 ,  H01L23/15 ,  H01L23/3731 ,  H01L23/3735 ,  H01L35/32 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/38 ,  H05K2201/0248 ,  H05K2201/0266 ,  H05K2201/0269 ,  Y10T428/24413 ,  Y10T428/24421 ,  Y10T428/25 ,  Y10T428/259 ,  H01L2924/00

摘要： A silicon nitride substrate comprises a substrate comprising a silicon nitride sintered body, and a plurality of granular bodies containing silicon and integrated to a principal surface of the substrate, wherein a plurality of needle crystals or column crystals comprising mainly silicon nitride are extended from a portion of the granular bodies. A brazing material is applied to a principal surface of the substrate, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies integrated to the principal surface of the substrate, and a plurality of the needle crystals or the column crystals extended from a portion of the granular bodies, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate.

摘要翻译： 氮化硅衬底包括含有氮化硅烧结体的衬底和多个含有硅的颗粒体并且与衬底的主表面集成在一起，其中主要包含氮化硅的多个针状晶体或柱状晶体从一部分 的颗粒体。 将钎焊材料施加到基板的主表面，并且将电路构件和散热构件布置在所施加的钎焊材料上，并通过加热粘合。 由于集成到基板的主面的多个粒状体以及从一部分粒状体延伸的多个针状晶体或柱状晶体，产生高的锚定效应，使得电路部件和热量 辐射构件牢固地结合到氮化硅衬底上。

公开(公告)号：US08992651B2

公开(公告)日：2015-03-31

申请号：US13432523

申请日：2012-03-28

申请人： Atsushi Sugai ,  Hiroshi Yamaguchi

发明人： Atsushi Sugai ,  Hiroshi Yamaguchi

IPC分类号： B01D39/06 ,  B01D39/20 ,  B01D39/14 ,  B01D24/00 ,  B01D50/00 ,  C04B35/591 ,  C04B38/00 ,  C04B38/02 ,  C04B111/00

CPC分类号： B01D39/2075 ,  C04B35/591 ,  C04B38/0064 ,  C04B38/02 ,  C04B2111/00793 ,  C04B2235/3222 ,  C04B2235/3244 ,  C04B2235/3882 ,  C04B2235/428 ,  C04B2235/46 ,  C04B2235/661 ,  C04B2235/767 ,  C04B2235/78 ,  C04B2235/96

摘要： [Problem] To provide a filter whose initial collection efficiency can be increased and whose pressure loss increase can be suppressed.[Means to solve the problem] A ceramic filter includes: numerous crystalline masses bound to one another each formed of aggregation of columnar crystals, wherein a number of large diameter pores are present between the numerous crystalline masses, and small diameter pores are present between the numerous columnar crystals forming the crystalline mass.

摘要翻译： [问题]提供一种可以提高初始收集效率并且可以抑制其压力损失增加的过滤器。 [解决问题的手段]陶瓷过滤器包括：彼此结合的大量结晶质量，其由柱状晶体的聚集形成，其中在多个结晶质量之间存在许多大直径的孔，并且在直径小的孔之间存在小直径的孔 许多柱状晶体形成结晶质。

公开(公告)号：US20140061981A1

公开(公告)日：2014-03-06

申请号：US14017197

申请日：2013-09-03

申请人： KUBOTA CORPORATION

发明人： Hiroshi YAMAGUCHI ,  Hiroaki OKANO ,  Atsushi SUGAI

IPC分类号： B01J20/30 ,  B01J27/24

CPC分类号： B01J20/3078 ,  B01D39/2068 ,  B01J23/42 ,  B01J27/24 ,  B01J35/04 ,  C04B35/584 ,  C04B35/638 ,  C04B38/0615 ,  C04B2111/00793 ,  C04B2111/0081 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3246 ,  C04B2235/3882 ,  C04B2235/428 ,  C04B2235/46 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6021 ,  C04B2235/6562 ,  C04B2235/80 ,  C04B2235/96 ,  C04B38/0006

摘要： A process for manufacturing a ceramic filter includes mixing silicon, yttrium oxide-doped zirconia, magnesium-aluminum spinel, silicon nitride, a pore-forming material, and a binder to form a ceramic precursor; extruding the ceramic precursor into a generally honeycomb shaped monolithic filter precursor or into a single filter tube precursor; drying the filter precursor or filter tube precursor to form a dried ceramic precursor; heating the dried ceramic precursor to remove the binder; and sintering to form the silicon nitride ceramic filter.

摘要翻译： 制造陶瓷过滤器的方法包括混合硅，掺杂氧化钇的氧化锆，镁 - 铝尖晶石，氮化硅，成孔材料和粘合剂以形成陶瓷前体; 将陶瓷前体挤压成通常为蜂窝状的整体过滤器前体或单个过滤管前体; 干燥过滤器前体或过滤管前体以形成干燥的陶瓷前体; 加热干燥的陶瓷前体以除去粘合剂; 并烧结形成氮化硅陶瓷过滤器。

公开(公告)号：US08496718B2

公开(公告)日：2013-07-30

申请号：US12411186

申请日：2009-03-25

申请人： Takashi Watanabe ,  Tatsuyuki Nakaoka ,  Takero Fukudome ,  Shuichi Tateno ,  Hiroshi Yoshimitsu

发明人： Takashi Watanabe ,  Tatsuyuki Nakaoka ,  Takero Fukudome ,  Shuichi Tateno ,  Hiroshi Yoshimitsu

IPC分类号： C09K3/14

CPC分类号： C04B35/587 ,  B23C2226/73 ,  C04B35/593 ,  C04B35/5935 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3418 ,  C04B2235/3869 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/3891 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/658 ,  C04B2235/6587 ,  C04B2235/723 ,  C04B2235/75 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  Y10T428/24355 ,  Y10T428/24942 ,  Y10T428/24983

摘要： A silicon nitride cutting tool comprising a sintered product is disclosed. The sintered product comprises silicon nitride, at least one rare earth element compound, and a magnesium compound. The silicon nitride cutting tool further comprises a surface region and an inside region comprising the sintered product with varying content ratios of component compounds to provide enhanced wear and fracture resistance.

摘要翻译： 公开了一种包含烧结产品的氮化硅切割工具。 烧结产品包括氮化硅，至少一种稀土元素化合物和镁化合物。 氮化硅切割工具还包括表面区域和内部区域，其包含具有不同成分化合物含量比的烧结产品，以提供增强的耐磨性和耐断裂性。

公开(公告)号：US07915533B2

公开(公告)日：2011-03-29

申请号：US11911794

申请日：2006-04-14

申请人： Youichirou Kaga ,  Hiromi Kikuchi ,  Hisayuki Imamura ,  Junichi Watanabe

发明人： Youichirou Kaga ,  Hiromi Kikuchi ,  Hisayuki Imamura ,  Junichi Watanabe

IPC分类号： H01L29/00 ,  H01B3/12 ,  H05K7/06

CPC分类号： H01L23/3731 ,  C04B35/584 ,  C04B37/021 ,  C04B37/026 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/3895 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/725 ,  C04B2235/787 ,  C04B2235/85 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/122 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/36 ,  C04B2237/402 ,  C04B2237/407 ,  C04B2237/60 ,  H01L23/15 ,  H01L23/49894 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H05K1/0306 ,  H05K3/0061 ,  H05K2201/0355 ,  H01L2924/00

摘要： In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of β type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in β type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m1/2 or higher and the thermal conductivity of 90 W/m·K or higher can be attained.

摘要翻译： 在涉及本发明的一个实施方式的氮化硅衬底中，面的取向度为＆bgr; 氮化硅为0.4-0.8。 这里，面内取向fa的度可以通过＆bgr中的每个晶格面取向中的衍射X射线强度的速率来确定。 型氮化硅。 本发明人的研究结果表明，当面内取向度fa为0.4-0.8时，获得了高断裂韧性和高热导率。 沿厚度方向，可以获得6.0MPa·m1 / 2以上的断裂韧性和90W / m·K以上的导热率。

公开(公告)号：US20070264576A1

公开(公告)日：2007-11-15

申请号：US11791653

申请日：2005-11-25

申请人： Eric Jorge ,  Olivier Marguin

发明人： Eric Jorge ,  Olivier Marguin

IPC分类号： C04B35/576 ,  C22B21/00 ,  C22B4/08

CPC分类号： C04B35/565 ,  C04B35/6266 ,  C04B35/6316 ,  C04B35/634 ,  C04B2235/3208 ,  C04B2235/3409 ,  C04B2235/3454 ,  C04B2235/3804 ,  C04B2235/3821 ,  C04B2235/383 ,  C04B2235/386 ,  C04B2235/3873 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/3895 ,  C04B2235/401 ,  C04B2235/428 ,  C04B2235/46 ,  C04B2235/48 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/5463 ,  C04B2235/668 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/9684 ,  C25C3/085

摘要： A sintered refractory block based on silicon carbide (SiC) with a silicon nitride (Si3N4) bond, for the manufacture of a aluminium electrolysis vessel, characterized in that it comprises, expressed in percentage by weight, at least 0.05% boron and/or between 0.05 and 1.2% calcium.

摘要翻译： 一种基于具有氮化硅（Si 3 N 4）键的碳化硅（SiC）的烧结耐火块，用于制造铝电解容器，其特征在于，其包含以百分比表示的至少0.05％的硼和/或在 0.05和1.2％的钙。

公开(公告)号：US20050013760A1

公开(公告)日：2005-01-20

申请号：US10830852

申请日：2004-04-23

申请人： Kenji Ito ,  Katsuhiko Takahashi ,  Toshimori Sekine

发明人： Kenji Ito ,  Katsuhiko Takahashi ,  Toshimori Sekine

IPC分类号： C01B21/068 ,  C04B35/584 ,  C01B33/06

CPC分类号： C01B21/068 ,  C01B21/0687 ,  C01P2002/32 ,  C01P2002/72 ,  C01P2002/74 ,  C01P2002/76 ,  C01P2002/88 ,  C04B35/584 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/5445 ,  C04B2235/762 ,  C04B2235/763

摘要： A method for preparing a high-pressure phase cubic spinel-type silicon nitride includes housing a molding containing low-pressure phase silicon nitride powder and a metal powder in a cylindrical container, arranging an explosive in the cylindrical container so as to surround the molding, and exploding the explosive to compress the molding. An X-ray diffraction pattern of the high-pressure phase cubic spinel-type silicon nitride produced according to the method of the present invention shows a maximum peak having a full width at half maximum of 0.65 degrees or less. TG-DTA analysis of the cubic spinel-type silicon nitride shows a weight change starting temperature of 700 to 1100° C.

摘要翻译： 制备高压相立方尖晶石型氮化硅的方法包括在筒状容器中容纳含有低压相氮化硅粉末和金属粉末的成型体，将圆筒状容器内的炸药排列成包围成形品， 并爆炸炸药压缩成型。 根据本发明的方法生产的高压相立方尖晶石型氮化硅的X射线衍射图示出了半峰全宽为0.65度以下的最大峰。 立方尖晶石型氮化硅的TG-DTA分析表明重量变化起始温度为700〜1100℃。

公开(公告)号：US20040238795A1

公开(公告)日：2004-12-02

申请号：US10453879

申请日：2003-06-02

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, a California corporation

发明人： Ren-Guan Duan ,  Joshua D. Kuntz ,  Amiya K. Mukherjee

IPC分类号： H01B001/00

CPC分类号： C04B35/64 ,  A61F2002/30968 ,  B82Y30/00 ,  C04B35/58 ,  C04B35/58021 ,  C04B35/6261 ,  C04B35/62615 ,  C04B35/645 ,  C04B2235/3232 ,  C04B2235/3826 ,  C04B2235/3882 ,  C04B2235/465 ,  C04B2235/5454 ,  C04B2235/6581 ,  C04B2235/666 ,  C04B2235/77 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/80 ,  C04B2235/96 ,  H01B1/18

摘要： Composite materials containing silicon, titanium, carbon, and nitrogen, formed by spark plasma sintering of ceramic starting materials to a high relative density, demonstrate unusually high electrical conductivity as well as high-performance mechanical and chemical properties including hardness, fracture toughness, and corrosion resistance. This combination of electrical, mechanical, and chemical properties makes these composites useful as electrical conductors in applications where high-performance materials are needed due to exposure to extreme conditions such as high temperatures, mechanical stresses, and corrosive environments.

摘要翻译： 通过陶瓷起始材料的放电等离子体烧结形成的含有硅，钛，碳和氮的复合材料具有高的相对密度，显示出非常高的导电性以及高性能的机械和化学性质，包括硬度，断裂韧性和腐蚀 抵抗性。 这种电气，机械和化学性质的组合使得这些复合材料在高温，机械应力和腐蚀性环境等极端条件下需要高性能材料的应用中可用作电导体。

公开(公告)号：US20240239716A1

公开(公告)日：2024-07-18

申请号：US18562171

申请日：2022-05-23

申请人： AMOSENSE CO.,LTD

发明人： Ji Hyung LEE

IPC分类号： C04B41/50 ,  C04B35/584 ,  C04B35/626 ,  C04B35/632 ,  C04B41/00 ,  C04B41/45 ,  C04B41/87 ,  H01J37/32 ,  H01L21/683 ,  H05B3/26

CPC分类号： C04B41/5045 ,  C04B35/584 ,  C04B35/6261 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/632 ,  C04B41/0036 ,  C04B41/4529 ,  C04B41/5031 ,  C04B41/87 ,  H01J37/32724 ,  H01L21/6833 ,  H05B3/265 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6584 ,  C04B2235/9607 ,  C04B2235/9669 ,  H01J2237/2007

摘要： An electrostatic chuck is provided. Implemented according to an embodiment of the present invention is an electrostatic chuck comprising: a silicon nitride sintered body; a surface modification layer covering at least a portion of the external surface of the silicon nitride sintered body and having corrosion resistance and plasma resistance; and an electrostatic electrode laid inside the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body of silicon nitride, and thus has excellent plasma resistance, chemical resistance, and thermal shock resistance while exhibiting an equivalent or similar level of heat dissipation performance compared to ceramic sintered bodies of aluminum nitride that have been conventionally widely used, so that the electrostatic chuck can be widely used in semiconductor processes.

公开(公告)号：US20240018055A1

公开(公告)日：2024-01-18

申请号：US18258449

申请日：2021-12-20

申请人： Arizona Board of Regents on Behalf of the University of Arizona

发明人： Erica Corral

IPC分类号： C04B35/593

CPC分类号： C04B35/593 ,  C04B2235/87 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/3882 ,  C04B2235/5454 ,  C04B2235/9607 ,  C04B2235/6567

摘要： Disclosed are ceramic powder compositions that include Si, N, O, C, Mg, and/or Mn in tailored combinations of different crystalline phases for producing high temperature resistant and high strength ceramic products. In some aspects, a ceramic powder for producing high temperature-resistant and/or high mechanical strength materials comprises a silicon nitride (Si3N4) powder, comprising Si3N4 particles having a size within a range of 30 nm to 700 nm, wherein the Si3N4 powder include alpha and beta phase silicon nitride in an amount up to about 1-100% vol; and an impurity constituent intermixed with the Si3N4 powder within the ceramic powder, the impurity constituent comprising at least one of silicon (Si), nitrogen (N), oxygen (O), carbon (C), magnesium (Mg), or manganese (Mn), wherein the impurity constituent constitutes less than about 0.1% wt to 15% wt of the ceramic powder.