公开(公告)号：US20160322519A1

公开(公告)日：2016-11-03

申请号：US15107901

申请日：2014-12-12

Applicant: AMS AG

Inventor： Franz SCHRANK ,  Sara CARNIELLO ,  Hubert ENICHLMAIR ,  Jochen KRAFT ,  Bernhard LOEFFLER ,  Rainer HOLZHAIDER

IPC: H01L31/0224 ,  H01L31/103 ,  H01L31/18 ,  H01L31/0216

Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening.

Abstract translation: 在半导体衬底（1）的主表面（10）上布置介电层（2），并且在介质层上布置钝化层（6）。 金属层（3）嵌入基板中的开口（12）上方的电介质层中，并且金属化层（14）布置在开口中。 金属化接触金属层，并通过基板的后表面（11）形成贯穿基板。 包含至少一个另外的层的层或层序列（7,8,9）布置在开口上方的钝化层上。 以这种方式，穿透基底通孔的底部是稳定的。 插头（17）还可以布置在开口中而不填充开口。