PACKAGE STRESS SENSOR
    1.
    发明申请

    公开(公告)号:US20230049755A1

    公开(公告)日:2023-02-16

    申请号:US17816979

    申请日:2022-08-02

    Abstract: A semiconductor-based stress sensor can include a bipolar transistor device with first and second collector terminals. An excitation circuit can provide an excitation signal to an emitter terminal of the bipolar transistor device, and a physical stress indicator for the semiconductor can be provided based on a relationship between signals measured at the collector terminals in response to the excitation signal. The signals can indicate a charge carrier mobility characteristic of the semiconductor, which can be used to provide an indication of physical stress. In an example, the physical stress indicator is based on a current deflection characteristic of a base region of the transistor device.

    PACKAGE STRESS SENSOR WITH HALL CANCELLATION

    公开(公告)号:US20230046102A1

    公开(公告)日:2023-02-16

    申请号:US17816947

    申请日:2022-08-02

    Abstract: A semiconductor Hall plate-based sensor can provide information about package stress and can be substantially immune to the influence of magnetic fields. In an example, the sensor can include a Hall plate and an excitation circuit. The excitation circuit can provide signals to respective node pairs of the Hall plate. A measurement circuit can receive information about a first electric signal at a first pair of nodes in response to a first portion of the excitation signal, and can receive information about a second electric signal at a second pair of nodes in response to a second portion of the excitation signal. The first and second electric signals can indicate a charge carrier mobility characteristic of the semiconductor, which can be used to provide an indication of physical stress on the sensor.

    LOW TEMPERATURE COEFFICIENT CURRENT SENSOR

    公开(公告)号:US20210382091A1

    公开(公告)日:2021-12-09

    申请号:US17283860

    申请日:2019-10-30

    Abstract: A system current sensor module can accurately sense or measure system current flowing through a sense current resistor by shunting current through a gain-setting resistor and using an amplifier to measure a resulting voltage, with an output transistor controlled by the amplifier controlling current through the gain setting resistor in a manner that tends to keep the amplifier inputs at the same voltage. The resistors can be thermally coupled to maintain similar temperatures when a system current is flowing. The thermal coupling can include conducting heat from a first resistor layer carrying the current sense resistor to a thermal cage layer located beyond a second resistor layer carrying the gain-setting resistor. This preserves accuracy, including during aging.

    Package stress sensor
    4.
    发明授权

    公开(公告)号:US12259285B2

    公开(公告)日:2025-03-25

    申请号:US17816979

    申请日:2022-08-02

    Abstract: A semiconductor-based stress sensor can include a bipolar transistor device with first and second collector terminals. An excitation circuit can provide an excitation signal to an emitter terminal of the bipolar transistor device, and a physical stress indicator for the semiconductor can be provided based on a relationship between signals measured at the collector terminals in response to the excitation signal. The signals can indicate a charge carrier mobility characteristic of the semiconductor, which can be used to provide an indication of physical stress. In an example, the physical stress indicator is based on a current deflection characteristic of a base region of the transistor device.

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