Integrated ion sensing apparatus and methods

    公开(公告)号:US10288582B2

    公开(公告)日:2019-05-14

    申请号:US14993871

    申请日:2016-01-12

    IPC分类号: G01N27/414

    摘要: An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.

    Thermoelectric devices
    3.
    发明授权

    公开(公告)号:US10672968B2

    公开(公告)日:2020-06-02

    申请号:US14805135

    申请日:2015-07-21

    IPC分类号: H01L35/32 H01L35/18

    摘要: An embodiment of a thermoelectric device may include a plurality of thermoelectric cells disposed between first and second planes. Each of the thermoelectric cells may include a thermoelectric element formed from a thermoelectric material of a single semiconductor type, the thermoelectric element including a first end, a second end, and a portion extending from the first end to the second end, the portion extending from the first end to the second end including at least two surfaces that face each other; and at least one conductive element electrically connected to and extending away from the second end of the thermoelectric element toward the first end of the thermoelectric element of another thermoelectric cell. Each thermoelectric cell also may further include an insulating element disposed between the at least two surfaces of the thermoelectric element and between portions of the at least one conductive element.

    INTEGRATED ION SENSING APPARATUS AND METHODS

    公开(公告)号:US20200072783A1

    公开(公告)日:2020-03-05

    申请号:US16613584

    申请日:2018-05-15

    摘要: An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.