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公开(公告)号:US20210233802A1
公开(公告)日:2021-07-29
申请号:US17227354
申请日:2021-04-11
Applicant: APPLIED MATERIALS, INC.
Inventor: Felix DENG , Yueh Sheng OW , Tuck Foong KOH , Nuno Yen-Chu CHEN , Yuichi WADA , Sree Rangasai V. KESAPRAGADA , Clinton GOH
IPC: H01L21/762 , H01L21/67
Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.
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公开(公告)号:US20210001520A1
公开(公告)日:2021-01-07
申请号:US16919736
申请日:2020-07-02
Applicant: APPLIED MATERIALS, INC.
Inventor: Tuck Foong KOH , Chien-Kang HSIUNG , Yueh Sheng OW , Felix DENG , Yue CUI , Nuno Yen-Chu CHEN , Ananthkrishna JUPUDI , Clinton GOH , Vinodh RAMACHANDRAN
Abstract: Methods and apparatus for curing a substrate or polymer using variable microwave frequency are provided herein. In some embodiments, a method of curing a substrate or polymer using variable microwave frequency includes: contacting a substrate or polymer with a plurality of predetermined discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies to cure the substrate or polymer.
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公开(公告)号:US20230061379A1
公开(公告)日:2023-03-02
申请号:US17410958
申请日:2021-08-24
Applicant: Applied Materials, Inc.
Inventor: Fang Jie LIM , Chin Wei TAN , Jun-Liang SU , Felix DENG , Sai Kumar KODUMURI , Ananthkrishna JUPUDI , Nuno Yen-Chu CHEN
Abstract: Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.
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公开(公告)号:US20210217656A1
公开(公告)日:2021-07-15
申请号:US17217179
申请日:2021-03-30
Applicant: APPLIED MATERIALS, INC.
Inventor: Felix DENG , Yueh Sheng OW , Tuck Foong KOH , Nuno Yen-Chu CHEN , Yuichi WADA , Sree Rangasai V. KESAPRAGADA , Clinton GOH
IPC: H01L21/762 , H01L21/67
Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.
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