公开(公告)号：US10529602B1

公开(公告)日：2020-01-07

申请号：US16189487

申请日：2018-11-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Priyadarshi Panda ,  Gill Lee ,  Srinivas Gandikota ,  Sung-Kwan Kang ,  Sanjay Natarajan

IPC: H01L21/67

Abstract: Methods and apparatuses for substrate fabrication are provided herein. The apparatus, for example, can include a cluster tool including a vacuum transfer module (VTM) configured to receive, under vacuum conditions, a silicon substrate with a polysilicon plug (poly plug) and transfer, without vacuum break, the substrate to and from a plurality of processing chambers each independently connected to the VTM for performing a corresponding one of a plurality of DRAM bit line processes on the substrate, the plurality of processing chambers comprising a pre-cleaning chamber configured to remove native oxide from a surface of the substrate, a barrier metal deposition chamber configured to deposit the barrier metal on the surface of the poly plug on the silicon substrate, a barrier layer deposition chamber configured to deposit at least one material on the surface of the barrier metal, a bit line metal deposition chamber configured to deposit at least one material on the surface of the barrier layer, and a hard mask deposition chamber configured to deposit at least one material on the surface of the bit line metal.

公开(公告)号：US10964717B2

公开(公告)日：2021-03-30

申请号：US16528800

申请日：2019-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Sung-Kwan Kang ,  Gill Lee ,  Chang Seok Kang ,  Tomohiko Kitajima

IPC: H01L27/11582 ,  H01L21/67 ,  H01L21/768 ,  H01L21/311

Abstract: Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming, on a substrate, a stack of alternating layers including a first layer of material and a second layer of material different from the first layer of material; forming a memory hole in the stack of alternating layers of the first layer of material and the second layer of material; depositing a layer of blocking oxide on sides defining the memory hole; depositing a layer of silicon atop the layer of blocking oxide to form a silicon channel; deposit core oxide to fill the silicon channel; removing the first layer of material to form spaces between the alternating layers of the second material; and one of depositing a third layer of material to partially fill the spaces to leave air gaps therein or depositing a fourth layer of material to fill the spaces.