公开(公告)号：US20170317225A1

公开(公告)日：2017-11-02

申请号：US15532001

申请日：2015-12-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Takao YONEHARA ,  Pravin K. NARWANKAR ,  Jonathan S. FRANKEL

IPC: H01L31/18 ,  H01L21/683

CPC classification number: H01L31/1804 ,  H01L21/6833 ,  H01L21/6838 ,  H01L21/68785 ,  H01L31/1876

Abstract: Methods and systems for all wrap around porous silicon formation are provided herein. In some embodiments, a substrate holder used for all wrap around porous silicon formation may include a body having a tapered opening along a first edge of the body, wherein the tapered opening is configured to release byproduct gases produced during porous silicon formation on a substrate supported by the substrate holder, a first vacuum channel formed in the body and extending to a first surface of the body, and a first sealing element disposed on the first surface of the body and fluidly coupled to the first vacuum channel, where in the first sealing element supports the substrate when disposed thereon.

公开(公告)号：US20170243774A1

公开(公告)日：2017-08-24

申请号：US15506814

申请日：2015-09-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Takao YONEHARA ,  Matthew SIMAS ,  Jonathan S. FRANKEL

IPC: H01L21/673 ,  C25D11/00 ,  C25D17/06 ,  H01L21/3063 ,  C25D11/32

CPC classification number: H01L21/67326 ,  C25D11/005 ,  C25D11/32 ,  C25D17/06 ,  C25F3/12 ,  C25F7/00 ,  H01L21/3063

Abstract: Methods and apparatus for forming porous silicon layers are provided. In some embodiments, an anodizing bath includes: a housing having a first volume to hold a chemical solution; a cathode disposed within the first volume at a first side of the housing; an anode disposed within the first volume at a second side of the housing, opposite the first side, wherein a face of each of the cathode and the anode have a given surface area; a substrate holder configured to retain a plurality of substrates along a perimeter thereof within the first volume in a plurality of substrate holding positions, a plurality of vent openings fluidly coupled to the first volume to release process gases, wherein a top of each of the plurality of vent openings are disposed above a chemical solution fill level in the first volume.