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1.发明公开公开(公告)号：US20230220579A1
公开(公告)日：2023-07-13
申请号：US17904531
申请日：2021-03-15
CPC分类号： C25D11/34 , C25D11/005 , C25D5/505 , C25D7/0614
摘要： A method for passivating a tinplate strip after electrodepositing the tin layer or tin layers, or after an optional flow-melting of the electrodeposited tin layer or tin layers, and an apparatus for producing the passivated tinplate strip.
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2.发明申请公开(公告)号：US20180222777A1
公开(公告)日：2018-08-09
申请号：US15748499
申请日：2015-07-29
申请人： SEMB-ECO R&D PTE LTD
发明人： Hwee Hong CHEW , Poh Kwee ONG
CPC分类号： B01D53/965 , B01D53/323 , B01D53/504 , B01D53/507 , B01D53/56 , B01D53/60 , B01D53/62 , B01D53/78 , B01D2252/103 , B01D2252/1035 , B01D2257/302 , B01D2257/404 , B01D2257/504 , B01D2258/0283 , C02F1/004 , C02F1/32 , C02F1/4602 , C02F1/46104 , C02F1/484 , C02F1/487 , C02F5/00 , C02F2103/007 , C02F2103/008 , C02F2103/08 , C02F2103/18 , C02F2201/46125 , C02F2201/4614 , C02F2201/46175 , C02F2201/483 , C02F2303/04 , C02F2303/08 , C02F2303/20 , C23F13/04 , C23F13/06 , C23F2213/32 , C25D11/005 , C25D11/022 , C25D11/34 , C25D11/38
摘要： The invention relates to a system for applying a superimposed time-varying frequency electromagnetic wave to a target object or a target region that is formed by the target object and a medium surrounding the target object, comprising a device for generating a superimposed time-varying frequency electromagnetic wave where the time-varying AC wave is riding on the predefined DC bias voltage. When applied to the object or region, the superimposed time-varying frequency electromagnetic wave is able to induce a flow of ionic current having a DC component traveling in a pulsating and time-varying manner in the target object and/or in the medium and effect induced vibration of electrons and molecules of the target object and the medium. The invention also relates to a method applying a superimposed time-varying frequency electromagnetic wave to a target object or a target region. The method and the system of the invention significantly reduce the capital cost and require very low energy, with the environmentally friendly final products, and are able to result in various treatment effects simultaneously.
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公开(公告)号：US20180221821A1
公开(公告)日：2018-08-09
申请号：US15748524
申请日：2016-07-29
申请人： SEMB-ECO R&D PTE LTD
发明人： Hwee Hong CHEW , Poh Kwee ONG
CPC分类号： B01D53/965 , B01D53/323 , B01D53/504 , B01D53/507 , B01D53/56 , B01D53/60 , B01D53/62 , B01D53/78 , B01D2252/103 , B01D2252/1035 , B01D2257/302 , B01D2257/404 , B01D2257/504 , B01D2258/0283 , C02F1/004 , C02F1/32 , C02F1/4602 , C02F1/46104 , C02F1/484 , C02F1/487 , C02F5/00 , C02F2103/007 , C02F2103/008 , C02F2103/08 , C02F2103/18 , C02F2201/46125 , C02F2201/4614 , C02F2201/46175 , C02F2201/483 , C02F2303/04 , C02F2303/08 , C02F2303/20 , C23F13/04 , C23F13/06 , C23F2213/32 , C25D11/005 , C25D11/022 , C25D11/34 , C25D11/38
摘要： The invention relates to a method and system for treating flue gases comprising generating a superimposed DC time-varying pulsed wave by superimposing a direct current on a low frequency time-varying pulsating electromagnetic wave signal, providing a treatment medium comprising water, using the superimposed DC pulsed wave to treat the treatment water medium, negatively charging the treated treatment water medium, and passing the negatively charged treated treatment water medium into a chamber containing flue gas such that the negatively charged treated treatment water affects the gas components of the flue gas and converts the gas components respectively to one or more of sulphates, nitrogen, oxygen, bicarbonates, carbonates and carbon, which can then be removed with used treatment water or exhaust gases.In particular, the invention relates to methods and systems for applying a superimposed time-varying frequency electromagnetic wave comprising both AC and DC components in a pulsating manner to enable the removal of pollutant gases from flue gases.
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4.发明申请公开(公告)号：US20180163320A1
公开(公告)日：2018-06-14
申请号：US15736365
申请日：2016-06-17
申请人： Maxence RENAUD
发明人： Maxence RENAUD
CPC分类号： C25D17/08 , C25D11/005 , C25D21/10
摘要： A part-carrier for electrolytically treating geometrically complex parts includes a reinforcement vertically supporting supports that are movable in rotation and designed to carry the parts to be treated, and a control member which, when activated, pivots the movable supports in sequence to either side of a neutral initial position. Application to electroplating.
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公开(公告)号：US09938631B2
公开(公告)日：2018-04-10
申请号：US14946392
申请日：2015-11-19
发明人： Urs Hulliger
IPC分类号： C25D17/06 , C25D11/34 , B65B5/00 , C25D17/08 , C25D11/00 , A61F2/00 , A61L2/07 , A61B17/00 , A61B50/20 , A61B50/30
CPC分类号： C25D11/34 , A61B50/20 , A61B50/30 , A61B2017/00526 , A61F2/0095 , A61L2/07 , B65B5/00 , C25D11/005 , C25D17/06 , C25D17/08
摘要： A device is for treating and packaging implants. The device includes a container including a chamber therein. The chamber is closed by a removable seal. The device also includes a carrier sized and shaped to be inserted into the chamber. The carrier includes a carrying structure configured to connect an implant thereto. A portion of the carrier may be formed of an electrically conductive material.
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公开(公告)号：US09890465B2
公开(公告)日：2018-02-13
申请号：US14563888
申请日：2014-12-08
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George D. Kamian , Jay Ashjaee , Takao Yonehara
CPC分类号： C25D11/005 , C25D7/12 , C25D11/022 , C25D11/024 , C25D11/32 , C25D17/001 , C25D17/008 , C25D17/08 , C25D21/04 , C25F7/00
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
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公开(公告)号：US09869031B2
公开(公告)日：2018-01-16
申请号：US14679731
申请日：2015-04-06
申请人： OB REALTY, LLC
发明人： George D. Kamian , Somnath Nag , Subramanian Tamilmani , Mehrdad M. Moslehi , Karl-Josef Kramer , Takao Yonehara
CPC分类号： C25D11/32 , C25D11/005 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L31/1892 , Y02E10/50
摘要： This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
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公开(公告)号：US20170306519A1
公开(公告)日：2017-10-26
申请号：US15498123
申请日：2017-04-26
IPC分类号： C25D11/02
CPC分类号： C25D11/026 , C25D9/06 , C25D11/005 , C25D11/022 , C25D11/04 , C25D17/004
摘要： A method including closing upper and lower ends of a bore with upper and lower closure element, respectively; introducing a cathode into the bore; and flowing an electrolyte through an annular space between a wall of the bore an outer surface of the cathode to provide an inner surface of the bore with a wear-resistant surface by electrolysis.
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公开(公告)号：US09677187B2
公开(公告)日：2017-06-13
申请号：US13984096
申请日：2012-02-07
IPC分类号： C25D11/02 , C25D5/18 , C25D11/00 , C25D11/04 , C25D11/26 , C25D11/30 , C25D11/32 , C25D13/02 , C25D21/12 , H01L23/14 , H05K1/05 , C25D11/06 , C25D15/00 , H05K1/02 , H05K1/11 , H05K1/18 , H01L23/373 , H01L23/367
CPC分类号： C25D5/18 , C25D11/00 , C25D11/005 , C25D11/02 , C25D11/024 , C25D11/026 , C25D11/04 , C25D11/06 , C25D11/26 , C25D11/30 , C25D11/32 , C25D13/02 , C25D15/00 , C25D21/12 , H01L23/142 , H01L23/3677 , H01L23/3735 , H01L2224/48227 , H01L2224/49109 , H01L2924/01327 , H01L2924/09701 , H01L2924/1305 , H01L2924/13055 , H05K1/021 , H05K1/053 , H05K1/115 , H05K1/18 , H05K2201/0116 , H05K2203/0315 , H05K2203/1147 , Y10T428/1317 , Y10T428/24917 , Y10T428/249969 , H01L2924/00
摘要： A method of forming a non-metallic coating on a metallic substrate involves the steps of positioning the metallic substrate in an electrolysis chamber and applying a sequence of voltage pulses of alternating polarity to electrically bias the substrate with respect to an electrode. Positive voltage pulses anodically bias the substrate with respect to the electrode and negative voltage pulses cathodically bias the substrate with respect to the electrode. The amplitude of the positive voltage pulses is potentiostatically controlled, whereas the amplitude of the negative voltage pulses is galvanostatically controlled.
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公开(公告)号：US09528194B2
公开(公告)日：2016-12-27
申请号：US14315421
申请日：2014-06-26
发明人： Jenn-Gwo Hwu , Wei-Cheng Tian , Po-Hao Tseng
IPC分类号： C25D7/06 , H01L29/423 , H01L29/40 , H01L21/02 , C25D5/02 , C25D9/06 , C25D11/32 , B82Y10/00 , B82Y40/00 , H01L29/775 , H01L29/06
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y40/00 , C25D5/02 , C25D7/0607 , C25D9/06 , C25D11/005 , C25D11/022 , C25D11/32 , C25D17/001 , C25D17/005 , C25D17/06 , H01L21/02258 , H01L21/02603 , H01L29/401 , H01L29/42364 , H01L29/42372 , H01L29/42392 , H01L29/775 , H01L29/78696
摘要： Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.
摘要翻译： 提供了用于在衬底上形成纳米线的结构，装置和方法。 在基板上形成第一突出结构。 将第一突出结构置于电解液中。 使用基板作为阳极电极的一部分进行阳极氧化。 在突出结构中形成一个或多个纳米线。 纳米线被阳极氧化时形成的第一介电材料包围。
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