公开(公告)号：US20170243774A1

公开(公告)日：2017-08-24

申请号：US15506814

申请日：2015-09-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Takao YONEHARA ,  Matthew SIMAS ,  Jonathan S. FRANKEL

IPC: H01L21/673 ,  C25D11/00 ,  C25D17/06 ,  H01L21/3063 ,  C25D11/32

CPC classification number: H01L21/67326 ,  C25D11/005 ,  C25D11/32 ,  C25D17/06 ,  C25F3/12 ,  C25F7/00 ,  H01L21/3063

Abstract: Methods and apparatus for forming porous silicon layers are provided. In some embodiments, an anodizing bath includes: a housing having a first volume to hold a chemical solution; a cathode disposed within the first volume at a first side of the housing; an anode disposed within the first volume at a second side of the housing, opposite the first side, wherein a face of each of the cathode and the anode have a given surface area; a substrate holder configured to retain a plurality of substrates along a perimeter thereof within the first volume in a plurality of substrate holding positions, a plurality of vent openings fluidly coupled to the first volume to release process gases, wherein a top of each of the plurality of vent openings are disposed above a chemical solution fill level in the first volume.