公开(公告)号：US20210320064A1

公开(公告)日：2021-10-14

申请号：US17356717

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： SUKETU A. PARIKH ,  RONG TAO ,  ROEY SHAVIV ,  JOUNG JOO LEE ,  SESHADRI GANGULI ,  SHIRISH PETHE ,  DAVID GAGE ,  JIANSHE TANG ,  MICHAEL A STOLFI

IPC: H01L23/528 ,  H01L21/67 ,  H01L23/532 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.