SPUTTER SOURCE FOR USE IN A SEMICONDUCTOR PROCESS CHAMBER
    1.
    发明申请
    SPUTTER SOURCE FOR USE IN A SEMICONDUCTOR PROCESS CHAMBER 有权
    用于半导体工艺室的溅射源

    公开(公告)号:US20140251800A1

    公开(公告)日:2014-09-11

    申请号:US13785193

    申请日:2013-03-05

    Abstract: In some embodiments, a sputter source for a process chamber may include: a first enclosure having a top, sides and an open bottom; a target coupled to the open bottom; an electrical feed coupled to the top of the first enclosure proximate a central axis of the first enclosure to provide power to the target via the first enclosure; a magnet assembly having a shaft, a support arm coupled to the shaft, and a magnet coupled to the support arm disposed within the first enclosure; a first rotational actuator disposed off-axis to the central axis of the first enclosure and rotatably coupled to the magnet to rotate the magnet about the central axis of the first enclosure; and a second rotational actuator disposed off-axis to the central axis of the first enclosure and rotatably coupled to the magnet to rotate the magnet about a central axis of the magnet assembly.

    Abstract translation: 在一些实施例中,用于处理室的溅射源可以包括:具有顶部,侧面和开口底部的第一外壳; 一个目标耦合到开放的底部; 耦合到靠近第一外壳的中心轴线的第一外壳的顶部的电源,以经由第一外壳向目标提供电力; 具有轴的磁体组件,联接到所述轴的支撑臂和耦合到设置在所述第一外壳内的所述支撑臂的磁体; 第一旋转致动器,其设置在离第一外壳的中心轴线的轴线处并且可旋转地联接到磁体,以使磁体围绕第一外壳的中心轴线旋转; 以及第二旋转致动器,其离轴设置到第一外壳的中心轴线并且可旋转地联接到磁体,以使磁体围绕磁体组件的中心轴线旋转。

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