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公开(公告)号：US20220307126A1
公开(公告)日：2022-09-29
申请号：US17838805
申请日：2022-06-13
Applicant: APPLIED MATERIALS, INC.
Inventor： Chao DU , Xing CHEN , Keith A. MILLER , Jothilingam RAMALINGAM , Jianxin LEI
Abstract: Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.
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公开(公告)号：US20200312683A1
公开(公告)日：2020-10-01
申请号：US16808107
申请日：2020-03-03
Applicant: Applied Materials, Inc.
Inventor： Ilya LAVITSKY , Keith A. MILLER , John J. MAZZOCCO , Wei W. WANG
IPC: H01L21/67 , H01L21/687 , H01L21/02 , C23C14/50
Abstract: A moveable substrate support for use in a processing chamber is provided. The moveable substrate support includes a substrate support surface and a robot, wherein the robot is configured to move the substrate support surface along a movement path. The substrate support includes a halo, and the halo protects the underlying components of the processing chamber from unwanted deposition, while the substrate support surface is moving along the movement path. The substrate support protects processing chamber components from deposition, reducing cleaning time and reducing the need for repairs of the components of the processing chamber.
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公开(公告)号：US20240304429A1
公开(公告)日：2024-09-12
申请号：US18118543
申请日：2023-03-07
Applicant: Applied Materials, Inc.
Inventor： Tiefeng SHI , Gang FU , Keith A. MILLER
CPC classification number: H01J37/32944 , G06N3/09 , H01J37/32091 , H01J2237/24564
Abstract: Methods, apparatuses and systems for detecting and managing arc events during a plasma chamber process include receiving impedance data measured during a plasma chamber process, analyzing the impedance data to determine if an arc event is occurring during the plasma chamber process, and if it is determined that an arc event is occurring, an action is taken to suppress an arc of the arc event. In some instances, a machine learning model that has been trained to recognize when an arc event is occurring from received measurement data is used to determine if an arc event is occurring.
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4.发明公开公开(公告)号：US20230402271A1
公开(公告)日：2023-12-14
申请号：US18237934
申请日：2023-08-25
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong WANG , Joung Joo LEE , Fuhong ZHANG , Martin Lee RIKER , Keith A. MILLER , William FRUCHTERMAN , Rongjun WANG , Adolph Miller ALLEN , Shouyin ZHANG , Xianmin TANG
CPC classification number: H01J37/3458 , H01J37/345 , H01J37/3452 , H01J37/3411 , C23C14/345 , H01J37/3441 , H01J37/3402 , C23C14/351 , C23C14/54 , H01J37/3405 , H01J37/3447 , H01J37/3455
Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.
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公开(公告)号：US20200335310A1
公开(公告)日：2020-10-22
申请号：US16838987
申请日：2020-04-02
Applicant: Applied Materials, Inc.
Inventor： Keith A. MILLER , Wei W. WANG , Alexander ERENSTEIN , John J. MAZZOCCO
Abstract: A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.
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Patent Agency Ranking
公开(公告)号：US20180010242A1
公开(公告)日：2018-01-11
申请号：US15632921
申请日：2017-06-26
Applicant: Applied Materials, Inc.
Inventor： Muhammad RASHEED , Keith A. MILLER , Rongjun WANG
IPC: C23C14/50 , C23C16/458 , C23C14/56 , H01L21/687 , C23C14/34
CPC classification number: C23C14/50 , C23C14/3407 , C23C14/564 , C23C16/4585 , H01L21/68735
Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.
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公开(公告)号：US20240213007A1
公开(公告)日：2024-06-27
申请号：US18089216
申请日：2022-12-27
Applicant: Applied Materials, Inc.
Inventor： Junjie PAN , Yida LIN , Xiangjin XIE , Martin Lee RIKER , Suhas UMESH , Keith A. MILLER
CPC classification number: H01J37/3464 , C23C14/35 , C23C14/54 , H01J37/3405 , H01J37/3476 , H01J2237/332
Abstract: Methods and apparatus for controlling processing of a substrate within a process chamber, comprising: performing statistical analysis on measurements of deposition profile of at least one previously processed substrate processed in the process chamber, wherein the deposition profile is based at least on modulating a power parameter of at least one power supply affecting a magnetron in the process chamber; determining, based on the statistical analysis, a model of the deposition profile as a function of at least the power parameter; fitting the measurements of deposition profile to the model; determining a power parameter setpoint for the at least one power supply using the fitted model based on a desired deposition profile of an unprocessed substrate; and setting the power parameter setpoint for processing the unprocessed substrate.
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公开(公告)号：US20240112886A1
公开(公告)日：2024-04-04
申请号：US18334063
申请日：2023-06-13
Applicant: Applied Materials, Inc.
Inventor： Tiefeng SHI , Gang FU , Keith A. MILLER
IPC: H01J37/32
CPC classification number: H01J37/32183 , H01J37/3299 , H01J2237/327 , H01J2237/3321
Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for dynamic impedance matching across multiple frequency bands of a power source. An example method includes amplifying a broadband signal, splitting the amplified broadband signal across a plurality of channel paths coupled to an impedance matching network, and adjusting at least one first impedance associated with the impedance matching network to achieve a second impedance within a threshold value based at least in part on feedback associated with the broadband signal. The impedance matching network includes a plurality of impedance matching circuits coupled to plasma excitation circuitry, and each of the impedance matching circuits is coupled to a different path of the plurality of channel paths and an output node.
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公开(公告)号：US20160340775A1
公开(公告)日：2016-11-24
申请号：US15216389
申请日：2016-07-21
Applicant: Applied Materials, Inc.
Inventor： Muhammad RASHEED , Keith A. MILLER , Rongjun WANG
CPC classification number: C23C14/50 , C23C14/3407 , C23C14/564 , C23C16/4585 , H01L21/68735
Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.
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公开(公告)号：US20160172227A1
公开(公告)日：2016-06-16
申请号：US14962446
申请日：2015-12-08
Applicant: APPLIED MATERIALS, INC.
Inventor： Ryan HANSON , Manjunatha KOPPA , Vijay D. PARKHE , John C. FORSTER , Keith A. MILLER
IPC: H01L21/683 , H02N13/00
CPC classification number: H01L21/6833 , H02N13/00
Abstract: An electrostatic chuck includes a puck having a support surface to support a substrate when disposed thereon and an opposing second surface, wherein one or more chucking electrodes are embedded in the puck, a body having a support surface coupled to the second surface of the puck to support the puck, a DC voltage sensing circuit disposed on support surface of the puck, and an inductor disposed in the body and proximate the support surface of the body, wherein the inductor is electrically coupled to DC voltage sensing circuit, and wherein the inductor is configured to filter high frequency current flow in order to accurately measure DC potential on the substrate.
Abstract translation: 静电卡盘包括具有支撑表面以支撑基板并且相对的第二表面的圆盘，其中一个或多个夹紧电极嵌入该圆盘中，具有联接到该圆盘的第二表面的支撑表面的本体 支撑圆盘，设置在圆盘的支撑表面上的直流电压检测电路和设置在主体中并靠近主体的支撑表面的电感器，其中电感器电耦合到直流电压感测电路，并且其中电感器是 被配置为过滤高频电流以准确测量衬底上的直流电位。
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