公开(公告)号：US20230077737A1

公开(公告)日：2023-03-16

申请号：US17474394

申请日：2021-09-14

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  Marvin L. Bernt ,  Prayudi Lianto

IPC: H01L21/768 ,  H01L21/288 ,  H01L23/532

Abstract: Exemplary methods of plating are described. The methods may include contacting a patterned substrate with a plating bath in a plating chamber. The patterned substrate includes at least one metal interconnect with a contact surface that is exposed to the plating bath. The metal interconnect is made of a first metal characterized by a first reduction potential. The methods further include plating a diffusion layer on the contact surface of the metal interconnect. The diffusion layer is made of a second metal characterized by a second reduction potential that is larger than the first reduction potential of the first metal in the metal interconnects. The plating bath also includes one or more ions of the second metal and a grain refining compound that reduces the formation of pinhole defects in the diffusion layer.

公开(公告)号：US11578422B2

公开(公告)日：2023-02-14

申请号：US17583004

申请日：2022-01-24

Applicant: APPLIED Materials, Inc.

Inventor： Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson ,  John L. Klocke ,  Paul Van Valkenburg ,  Eric J. Bergman ,  Adam Marc McClure ,  Deepak Saagar Kalaikadal ,  Nolan Layne Zimmerman ,  Michael Windham ,  Mikael R. Borjesson

IPC: C25D17/12 ,  C25D21/12 ,  C25D5/08 ,  C25D7/12 ,  C25D17/00

Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

公开(公告)号：US11211252B2

公开(公告)日：2021-12-28

申请号：US16260611

申请日：2019-01-29

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  You Wang

IPC: C25D3/38 ,  C25D7/12 ,  C25D21/14 ,  H01L21/288 ,  C25D5/10 ,  H01L21/768

Abstract: Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The electroplating systems may include a catholyte tank and an anolyte tank fluidly coupled with the two baths of the two-bath electroplating chamber. The electroplating systems may include a first pump configured to provide catholyte from the catholyte tank to the first bath. The electroplating systems may include a second pump configured to provide anolyte from the anolyte tank to the second bath. The electroplating systems may also include an oxygen-delivery apparatus configured to provide an oxygen-containing fluid within the electroplating system.

公开(公告)号：US20170263472A1

公开(公告)日：2017-09-14

申请号：US15441081

申请日：2017-02-23

Applicant: APPLIED Materials, Inc.

Inventor： John L. Klocke ,  Kyle M. Hanson ,  Joseph A. Jonathan ,  Stuart Crane

IPC: H01L21/67 ,  B08B3/02 ,  B08B3/08 ,  B08B3/04 ,  H01L21/687 ,  B08B3/12

CPC classification number: H01L21/67057 ,  B08B3/10 ,  B08B3/12 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6719 ,  H01L21/68707 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H01L21/68792

Abstract: A wafer processor has a rotor holding wafers within a process tank. The rotor rotates sequentially moving the wafers through a process liquid held in the process tank. The tank may have an I-beam shape to reduce the volume of process liquid. A load port is provided at a top of the process tank for loading and unloading wafers into and out of the process tank. Rinsing and cleaning chambers may be associated with the load port to remove process liquid from processed wafers. The processor may be oriented with the rotor rotating about a horizontal axis or about a vertical axis.

公开(公告)号：US20150322587A1

公开(公告)日：2015-11-12

申请号：US14707980

申请日：2015-05-08

Applicant: APPLIED Materials, Inc.

Inventor： Chris Pabelico ,  Roey Shaviv ,  John L. Klocke ,  Ismail T. Emesh

IPC: C25D7/12 ,  H01L21/288 ,  H01L21/768

CPC classification number: H01L21/76882 ,  C25D3/12 ,  C25D3/38 ,  C25D5/10 ,  C25D5/12 ,  C25D5/50 ,  C25D5/505 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76898 ,  H01L2221/1089

Abstract: A method for at least partially filling a feature on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 6 to about 13, an organic additive, and first and second metal complexing agents.

Abstract translation: 一种用于至少部分地填充工件上的特征的方法包括使用具有至少一个电镀金属离子，pH范围为约6至约13的电镀电解质，有机物，电化学沉积金属化层在形成在工件上的种子层上电化学沉积金属化层 添加剂，第一和第二金属络合剂。

公开(公告)号：US20250051951A1

公开(公告)日：2025-02-13

申请号：US18929416

申请日：2024-10-28

Applicant: Applied Materials, Inc.

Inventor： Paul R. McHugh ,  Charles Sharbono ,  Jing Xu ,  John L. Klocke ,  Sam K. Lee ,  Keith Edward Ypma

IPC: C25D5/18 ,  C25D5/02 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12 ,  G06F30/20 ,  H01L21/768

Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.

公开(公告)号：US20230092346A1

公开(公告)日：2023-03-23

申请号：US17478252

申请日：2021-09-17

Applicant: Applied Materials, Inc.

Inventor： Charles Sharbono ,  Paul R. McHugh ,  Gregory J. Wilson ,  John L. Klocke ,  Nolan L. Zimmerman

IPC: C25D5/02 ,  H01L21/288 ,  C25D7/12

Abstract: Exemplary electroplating systems may include a vessel. The systems may include a paddle disposed within the vessel. The paddle may be characterized by a first surface and a second surface. The first surface of the paddle may be include a plurality of ribs that extend upward from the first surface. The plurality of ribs may be arranged in a generally parallel manner about the first surface. The paddle may define a plurality of apertures through a thickness of the paddle. Each of the plurality of apertures may have a diameter of less than about 5 mm. The paddle may have an open area of less than about 15%.

公开(公告)号：US10546762B2

公开(公告)日：2020-01-28

申请号：US15814252

申请日：2017-11-15

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  Paul McHugh ,  Stuart Crane ,  Richard W. Plavidal

IPC: H01L21/67 ,  C11D7/26 ,  H01L21/02 ,  B08B3/04

Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

公开(公告)号：US20190237335A1

公开(公告)日：2019-08-01

申请号：US16260611

申请日：2019-01-29

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  You Wang

IPC: H01L21/288 ,  C25D5/10 ,  C25D7/12 ,  H01L21/768 ,  C25D3/38

CPC classification number: H01L21/2885 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  H01L21/76843

Abstract: Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The electroplating systems may include a catholyte tank and an anolyte tank fluidly coupled with the two baths of the two-bath electroplating chamber. The electroplating systems may include a first pump configured to provide catholyte from the catholyte tank to the first bath. The electroplating systems may include a second pump configured to provide anolyte from the anolyte tank to the second bath. The electroplating systems may also include an oxygen-delivery apparatus configured to provide an oxygen-containing fluid within the electroplating system.

公开(公告)号：US10227707B2

公开(公告)日：2019-03-12

申请号：US14802859

申请日：2015-07-17

Applicant: APPLIED Materials, Inc.

Inventor： Gregory J. Wilson ,  Paul R. McHugh ,  John L. Klocke

IPC: C25B15/08 ,  C25B15/02 ,  C25B9/08 ,  C25B9/18 ,  C25B1/02 ,  C25D21/18 ,  C25D7/12 ,  C25D17/10 ,  C25D17/00 ,  C25D17/06 ,  C25D3/38

Abstract: An electroplating processor has a vessel holding an electrolyte. An inert anode in the vessel has an anode wire within an anode membrane tube. A head for holds a wafer in contact with the electrolyte in the vessel. The wafer is connected to a cathode. A catholyte replenisher is connected to the vessel. The catholyte replenisher adds metal ions into the catholyte by moving ions of a bulk metal through a catholyte membrane in the catholyte replenisher.