公开(公告)号：US20030213562A1

公开(公告)日：2003-11-20

申请号：US10150581

申请日：2002-05-17

申请人： APPLIED MATERIALS, INC.

发明人： Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Shigeru Takehiro ,  Masayoshi Nohira ,  Tetsuya Ishikawa ,  Ndanka O. Mukuti

IPC分类号： C23C016/00 ,  H01L021/306 ,  C23F001/00

CPC分类号： H01J37/32522 ,  C23C16/4401 ,  C23C16/507 ,  H01J37/321

摘要： The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. This allows higher source power plasma to be generated and facilitates gapfill for extremely small geometries. The dome design improves the uniformity of the plasma distribution over the substrate to be processed. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is typically at least about 0.15, more desirably about 0.2-0.25. In some embodiments, a vacuum system includes a pump and a throttle gate valve disposed in a lower chamber portion of the chamber near the bottom. A screen previously disposed below the gate valve may be moved above the gate valve to facilitate cleaning and reduce particulates.

摘要翻译： 本发明涉及等离子体化学气相沉积室的设计，其提供了在基底上形成薄的CVD膜的更均匀的条件。 本发明的实施例通过减少或最小化沉积和非沉积循环之间的圆顶上的温度波动来改善上室的温度控制并提高颗粒性能。 这允许产生更高的源功率等离子体并且促进极小几何形状的间隙填充。 圆顶设计提高了待处理衬底上等离子体分布的均匀性。 根据本发明的一个方面，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。 该室包括底部，侧壁和设置在侧壁顶部的圆顶。 圆顶具有圆顶，并具有限定腔直径的侧部。 顶部RF线圈设置在圆顶顶部上方。 侧面RF线圈邻近圆顶的侧部设置。 侧RF线圈通过线圈分离与顶部RF线圈间隔开。 线圈分离与室直径的比率通常为至少约0.15，更期望为约0.2-0.25。 在一些实施例中，真空系统包括设置在靠近底部的室的下室部分中的泵和节流闸阀。 预先设置在闸阀下方的筛网可以在闸阀上方移动以便于清洁并减少微粒。