公开(公告)号：US20040206373A1

公开(公告)日：2004-10-21

申请号：US10680616

申请日：2003-10-06

申请人： Applied Materials, Inc.

发明人： Bernardo Donoso ,  Tetsuya Ishikawa ,  Lily L. Pang ,  Svetlana Sherman

IPC分类号： B08B003/02

CPC分类号： H01L21/67051 ,  B08B3/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034

摘要： Embodiments of the invention generally provide a substrate spin rinse dry cell that may be used in a semiconductor processing system. The cell generally includes a cell body defining an interior processing volume, and a rotatable substrate support member positioned in the processing volume. The rotatable substrate support member includes a rotatable hub assembly having a plurality of upstanding substrate engaging members extending therefrom, and a central member positioned radially inward of the plurality of upstanding substrate engaging members, the central member having a plurality of backside fluid dispensing nozzles and at least one backside gas dispensing nozzle positioned thereon. The cell further includes at least one frontside fluid dispensing nozzle positioned to dispense a rinsing fluid onto an upper surface of a substrate supported by the substrate support member, and at least one frontside gas dispensing nozzle positioned to dispense a drying gas into the processing volume, the drying gas being directed toward the upper substrate surface.

摘要翻译： 本发明的实施方案通常提供可用于半导体处理系统的底物旋转漂洗干细胞。 电池通常包括限定内部处理容积的电池体和位于处理容积中的可旋转衬底支撑构件。 可旋转的基板支撑构件包括可旋转的毂组件，其具有从其延伸的多个直立的基板接合构件和位于多个直立的基板接合构件的径向内侧的中心构件，中心构件具有多个后侧流体分配喷嘴 位于其上的至少一个后侧气体分配喷嘴。 细胞还包括至少一个前侧流体分配喷嘴，其定位成将冲洗流体分配到由基板支撑构件支撑的基板的上表面上，以及至少一个前侧气体分配喷嘴，其定位成将干燥气体分配到处理体积中， 干燥气体被引向上基板表面。

公开(公告)号：US20040082199A1

公开(公告)日：2004-04-29

申请号：US10647959

申请日：2003-08-26

申请人： Applied Materials, Inc.

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： H01L021/469

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

摘要翻译： 一种通过有机硅化合物和包含碳的氧化气体以恒定的RF功率水平的反应沉积低介电常数膜的方法和装置。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。

公开(公告)号：US20040038545A1

公开(公告)日：2004-02-26

申请号：US10648616

申请日：2003-08-26

申请人： Applied Materials, Inc.

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： H01L021/302 ,  H01L021/461

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L2221/1031 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2nullSiHnullOnullSiHnull(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.

摘要翻译： 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和装置或约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH3SiH3，二甲基硅烷，（CH3）2SiH2或1,1,3,3-四甲基 - 二硅氧烷，（CH3）2-SiH-O-SiH-（CH3）2， 和一氧化二氮，N2O，在约10W至约150W的恒定RF功率水平，或占空比的10％至30％期间的约20W至约250W的脉冲RF功率水平。

公开(公告)号：US20020187656A1

公开(公告)日：2002-12-12

申请号：US09854406

申请日：2001-05-11

申请人： Applied Materials, Inc.

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt ,  Tetsuya Ishikawa

IPC分类号： H01L021/31 ,  H01L021/469 ,  B05C011/00

CPC分类号： H01L21/02164 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

摘要： A method of forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The silicon oxide layer is formed by flowing a process gas including a silicon-containing source, an oxygen-containing source, an inert gas and a hydrogen-containing source into the substrate processing chamber and forming a high density plasma (i.e., a plasma having an ion density of at least 1null1011 ions/cm3) from the process gas to deposit said silicon oxide layer over said substrate. In one embodiment, the hydrogen-containing source in the process gas is selected from the group of H2, H2O, NH3, CH4 and C2H6.

摘要翻译： 在设置在高密度等离子体基板处理室中的基板上形成氧化硅层的方法。 氧化硅层通过将包含含硅源，含氧源，惰性气体和含氢源的处理气体流入基板处理室而形成，并形成高密度等离子体（即，具有 离子密度为至少1×10 11个离子/ cm 3），以将所述氧化硅层沉积在所述衬底上。 在一个实施方案中，工艺气体中的含氢源选自H 2，H 2 O，NH 3，CH 4和C 2 H 6。

公开(公告)号：US20040212947A1

公开(公告)日：2004-10-28

申请号：US10421473

申请日：2003-04-22

申请人： Applied Materials, Inc.

发明人： Andrew Nguyen ,  Wing Lau Cheng ,  Hiroji Hanawa ,  Semyon L. Kats ,  Kartik Ramaswamy ,  Yan Ye ,  Kwok Manus Wong ,  Daniel J. Hoffman ,  Tetsuya Ishikawa ,  Brian C. Lue

IPC分类号： H02H001/00

CPC分类号： H01L21/67109

摘要： A support for a substrate processing chamber has upper and lower walls that are joined by a peripheral sidewall to define a reservoir. A fluid inlet supplies a heat transfer fluid to the reservoir. In one version, a plurality of protrusions extends into the reservoir to perturb the flow of the heat transfer fluid through the reservoir. In another version, the reservoir is an elongated channel having one or more of (i) serpentine convolutions, (ii) integral fins extending into the channel, (iii) a roughened internal surface, or (iv) a changing cross-section. A fluid outlet discharges the heat transfer fluid from the reservoir.

摘要翻译： 用于衬底处理室的支撑件具有通过周边侧壁连接以限定储存器的上壁和下壁。 流体入口将传热流体供应到储存器。 在一个版本中，多个突起延伸到储存器中以扰乱通过储存器的传热流体的流动。 在另一个版本中，储存器是具有（i）蛇形循环中的一个或多个的细长通道，（ii）延伸到通道中的整体翅片，（iii）粗糙化的内表面，或（iv）变化的横截面。 流体出口从储存器排出传热流体。

公开(公告)号：US20030027427A1

公开(公告)日：2003-02-06

申请号：US09922980

申请日：2001-08-06

申请人： Applied Materials, Inc.

发明人： Diana Xiaobing Ma ,  Sy Yuan Shieh ,  Yan Ye ,  Tetsuya Ishikawa ,  Gary C. Hsueh

IPC分类号： H01L021/311 ,  C23C016/00

CPC分类号： H01L21/76843 ,  H01L21/76802 ,  H01L21/76807

摘要： An integrated process and system for etching a hole in an oxide layer and conformally coating a liner for metal filling. The wafer with a patterned photoresist mask is loaded into a first transfer chamber held at a vacuum of less than 1 Torr. An oxide etch reactor etches the oxide down to a nitride etch stop and barrier layer to form a hole through the oxide. Thereafter, the photoresist is ashed, and the barrier layer is removed. The wafer is transferred through a gated vacuum passageway to a second transfer chamber held at a vacuum no more than 10null6 Torr. In at least two PVD or CVD deposition chambers connected to the second transfer chamber, a barrier layer of Ta/TaN is coated onto sides of the hole and a copper seed layer is deposited over the barrier layer. The invention may be limited to the operations subsequent to ashing.

摘要翻译： 一种用于蚀刻氧化物层中的孔并且适形地涂覆用于金属填充的衬垫的一体化工艺和系统。 具有图案化的光致抗蚀剂掩模的晶片被装载到保持在小于1托的真空的第一传输室中。 氧化物蚀刻反应器将氧化物蚀刻到氮化物蚀刻停止层和阻挡层，以形成穿过氧化物的孔。 此后，将光致抗蚀剂灰化，并且去除阻挡层。 将晶片通过门控真空通道传送到保持在不超过10-6托的真空的第二传送室。 在连接到第二转移室的至少两个PVD或CVD沉积室中，将Ta / TaN的阻挡层涂覆到孔的侧面上，并且在阻挡层上沉积铜籽晶层。 本发明可以限于灰化之后的操作。

公开(公告)号：US20030024901A1

公开(公告)日：2003-02-06

申请号：US09771203

申请日：2001-01-26

申请人： Applied Materials, Inc.

发明人： Tetsuya Ishikawa ,  Alexandros T. Demos ,  Seon-Mee Cho ,  Feng Gao ,  Kaveh F. Niazi ,  Michio Aruga

IPC分类号： C23F001/00 ,  C23C016/00

CPC分类号： H01J37/3244 ,  C23C16/455

摘要： A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.

公开(公告)号：US20020127350A1

公开(公告)日：2002-09-12

申请号：US09800798

申请日：2001-03-07

申请人： Applied Materials, Inc.

发明人： Tetsuya Ishikawa ,  Kaveh Niazi ,  Tsutomu Tanaka ,  Canfeng Lai ,  Robert Duncan

IPC分类号： C23C016/00 ,  C23C014/00

CPC分类号： C23C16/45508 ,  C23C16/507 ,  C23C16/52

摘要： A method and apparatus for forming a layer on a substrate in a process chamber during a plasma deposition process are provided. A plasma is formed in a process chamber, a process gas with precursor gases suitable for depositing the layer are flowed into the process chamber, and a magnetic field having a strength less than about 0.5 gauss is attenuated within the process chamber. Attenuation of such a magnetic field results in an improvement in the degree of process uniformity achieved during the deposition.

摘要翻译： 提供了一种用于在等离子体沉积工艺期间在处理室中在衬底上形成层的方法和装置。 在处理室中形成等离子体，具有适于沉积层的前体气体的工艺气体流入处理室，并且具有小于约0.5高斯的强度的磁场在处理室内衰减。 这种磁场的衰减导致在沉积期间实现的工艺均匀度的改善。

公开(公告)号：US20010004880A1

公开(公告)日：2001-06-28

申请号：US09776002

申请日：2001-02-02

申请人： THE CO-INVENTORS TO APPLIED MATERIALS, INC.

发明人： Thomas K. Cho ,  Tetsuya Ishikawa

IPC分类号： C23C016/00

CPC分类号： H01L21/67109 ,  C23C16/4586 ,  C23C16/46 ,  Y10S156/915

摘要： A workpiece support having dichotomy of thermal paths therethrough is provided for controlling the temperature of a workpiece support thereon. In one embodiment, a workpiece support includes a platen body having a plug centrally disposed in a workpiece support surface of the platen body. A lower surface of the plug defines a void between the plug and a bottom of the bore. The void creates a dichotomy of thermal paths through the platen body thus controlling the temperature of a wafer support surface. Alternatively, the plug and platen body may be fabricated from materials having different rates of thermal conductivity to created the dichotomy of thermal paths in addition to or in absence of the void.

摘要翻译： 提供具有通过其的热通路二分法的工件支撑件，用于控制其上的工件支撑件的温度。 在一个实施例中，工件支撑件包括具有中心地设置在压板主体的工件支撑表面中的插头的压板本体。 插塞的下表面限定了插头和孔的底部之间的空隙。 空隙产生通过压板体的热路径的二分法，从而控制晶片支撑表面的温度。 或者，插头和压盘体可以由具有不同传热率的材料制成，以产生除了空隙之外还是在空隙之外的热路径的二分法。

公开(公告)号：US20030213562A1

公开(公告)日：2003-11-20

申请号：US10150581

申请日：2002-05-17

申请人： APPLIED MATERIALS, INC.

发明人： Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Shigeru Takehiro ,  Masayoshi Nohira ,  Tetsuya Ishikawa ,  Ndanka O. Mukuti

IPC分类号： C23C016/00 ,  H01L021/306 ,  C23F001/00

CPC分类号： H01J37/32522 ,  C23C16/4401 ,  C23C16/507 ,  H01J37/321

摘要： The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. This allows higher source power plasma to be generated and facilitates gapfill for extremely small geometries. The dome design improves the uniformity of the plasma distribution over the substrate to be processed. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is typically at least about 0.15, more desirably about 0.2-0.25. In some embodiments, a vacuum system includes a pump and a throttle gate valve disposed in a lower chamber portion of the chamber near the bottom. A screen previously disposed below the gate valve may be moved above the gate valve to facilitate cleaning and reduce particulates.

摘要翻译： 本发明涉及等离子体化学气相沉积室的设计，其提供了在基底上形成薄的CVD膜的更均匀的条件。 本发明的实施例通过减少或最小化沉积和非沉积循环之间的圆顶上的温度波动来改善上室的温度控制并提高颗粒性能。 这允许产生更高的源功率等离子体并且促进极小几何形状的间隙填充。 圆顶设计提高了待处理衬底上等离子体分布的均匀性。 根据本发明的一个方面，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。 该室包括底部，侧壁和设置在侧壁顶部的圆顶。 圆顶具有圆顶，并具有限定腔直径的侧部。 顶部RF线圈设置在圆顶顶部上方。 侧面RF线圈邻近圆顶的侧部设置。 侧RF线圈通过线圈分离与顶部RF线圈间隔开。 线圈分离与室直径的比率通常为至少约0.15，更期望为约0.2-0.25。 在一些实施例中，真空系统包括设置在靠近底部的室的下室部分中的泵和节流闸阀。 预先设置在闸阀下方的筛网可以在闸阀上方移动以便于清洁并减少微粒。