公开(公告)号：US20030211757A1

公开(公告)日：2003-11-13

申请号：US10141391

申请日：2002-05-07

申请人： APPLIED MATERIALS, INC.

发明人： Sudhir Gondhalekar ,  Dongqing Li ,  Canfeng Lai ,  Zhengquan Tan ,  Steve H. Kim ,  Alexander Veyster

IPC分类号： H01L021/31 ,  H01L021/469 ,  H01L021/306 ,  C23C016/00

CPC分类号： C23C16/45563 ,  C23C16/4583 ,  C23C16/466 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/32532 ,  H01L21/28556 ,  H01L21/67069

摘要： A substrate support utilized in high-density plasma chemical vapor deposition (HDP-CVD) processing functions as a radio frequency (RF) electrode (e.g., a bias RF cathode). An upper surface of the substrate support has a central upper surface portion and a peripheral upper surface portion, with the peripheral upper surface portion recessed relative to the central upper surface portion. The upper surface of the support extends beyond an outer edge of the substrate when the substrate is positioned on the substrate support. This extension in the support upper surface may enhance process performance by reducing electric field edge effects, as well as by improving directional distribution of ions traveling to the substrate. Since the peripheral upper surface portion is recessed relative to the central upper surface portion, a detachable shield can be disposed on the peripheral upper surface portion for preventing undesirable deposition on, or chemical attack of, the peripheral upper surface portion, without interfering with positioning of the substrate.

摘要翻译： 用于高密度等离子体化学气相沉积（HDP-CVD）处理的衬底支撑件用作射频（RF）电极（例如，偏压RF阴极）。 基板支撑件的上表面具有中心上表面部分和周边上表面部分，周边上表面部分相对于中央上表面部分凹陷。 当衬底定位在衬底支撑件上时，支撑件的上表面延伸超过衬底的外边缘。 支撑上表面的这种延伸可以通过减小电场边缘效应以及改善行进到基底的离子的方向分布来增强工艺性能。 由于外周上表面部分相对于中央上表面部分凹陷，所以可以在外围上表面部分设置可拆卸的屏蔽件，以防止周边上表面部分的不希望的沉积或化学侵蚀，而不会干扰定位 底物。

公开(公告)号：US20040231798A1

公开(公告)日：2004-11-25

申请号：US10825831

申请日：2004-04-16

申请人： Applied Materials, Inc.

发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

IPC分类号： C23F001/00

CPC分类号： H01L21/67109 ,  H01L21/67017

摘要： A replaceable gas nozzle is insertable in a gas distributor ring of a substrate processing chamber and that can be shielded within the chamber. The replaceable gas nozzle has a longitudinal ceramic body having a channel to direct the flow of the gas into the chamber. The ceramic body includes a first external thread to mate with the gas distributor ring, and a second external thread to receive a heat shield. The channel has an inlet to receive the gas from the gas distributor ring and a pinhole outlet to release the gas into the chamber. A heat shield can be used to shield the nozzle extending into the chamber. The heat shield has a hollow member configured to be coupled with the nozzle that has an internal dimension sufficiently large to be disposed around at least a portion of the nozzle. The hollow member also has an extension which projects distally of the outlet of the nozzle and a heat shield opening for the process gas to flow therethrough from the nozzle outlet.

摘要翻译： 可替换的气体喷嘴可插入基板处理室的气体分配器环中并且可以在室内被屏蔽。 可更换气体喷嘴具有纵向陶瓷体，该纵向陶瓷体具有用于引导气体流入室的通道。 陶瓷体包括与气体分配器环配合的第一外螺纹和用于接纳隔热罩的第二外螺纹。 通道具有用于从气体分配器环接收气体的入口和用于将气体释放到室中的针孔出口。 可以使用隔热罩来屏蔽延伸到腔室中的喷嘴。 隔热罩具有中空构件，其构造成与喷嘴联接，其具有足够大的内部尺寸以设置在喷嘴的至少一部分周围。 中空构件还具有从喷嘴的出口向远侧突出的延伸部和用于处理气体的热屏蔽开口从喷嘴出口流过。

公开(公告)号：US20030213434A1

公开(公告)日：2003-11-20

申请号：US10150458

申请日：2002-05-17

申请人： APPLIED MATERIALS, INC.

发明人： Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Steve H. Kim ,  Mehrdad Moshfegh ,  Shigeru Takehiro ,  Thomas Kring ,  Tetsuya Ishikawa

IPC分类号： C23C016/00

CPC分类号： H01J37/32522 ,  C23C16/507 ,  H01J37/321

摘要： The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.

摘要翻译： 本发明涉及一种等离子体CVD室的上室设计，其提供在衬底上形成薄CVD膜的更均匀的条件。 本发明的实施例通过减少或最小化沉积和非沉积循环之间的圆顶上的温度波动来改善上室的温度控制并提高颗粒性能。 根据本发明的一个方面，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。 该室包括底部，侧壁和设置在侧壁顶部的圆顶。 圆顶具有基本平坦的圆顶。 顶部RF线圈设置在圆顶顶部上方，并且具有比在腔室中要处理的基板尺寸更大的外环。 冷板设置在顶部RF线圈上方，并且尺寸大于在腔室中要处理的基板。

公开(公告)号：US20040126952A1

公开(公告)日：2004-07-01

申请号：US10630989

申请日：2003-07-28

申请人： APPLIED MATERIALS, INC.

发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

IPC分类号： H01L021/8238

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

摘要翻译： 本发明旨在改善半导体处理系统中的缺陷性能。 在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。 至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。 该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。 隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。 隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

公开(公告)号：US20030213562A1

公开(公告)日：2003-11-20

申请号：US10150581

申请日：2002-05-17

申请人： APPLIED MATERIALS, INC.

发明人： Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Shigeru Takehiro ,  Masayoshi Nohira ,  Tetsuya Ishikawa ,  Ndanka O. Mukuti

IPC分类号： C23C016/00 ,  H01L021/306 ,  C23F001/00

CPC分类号： H01J37/32522 ,  C23C16/4401 ,  C23C16/507 ,  H01J37/321

摘要： The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. This allows higher source power plasma to be generated and facilitates gapfill for extremely small geometries. The dome design improves the uniformity of the plasma distribution over the substrate to be processed. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is typically at least about 0.15, more desirably about 0.2-0.25. In some embodiments, a vacuum system includes a pump and a throttle gate valve disposed in a lower chamber portion of the chamber near the bottom. A screen previously disposed below the gate valve may be moved above the gate valve to facilitate cleaning and reduce particulates.

摘要翻译： 本发明涉及等离子体化学气相沉积室的设计，其提供了在基底上形成薄的CVD膜的更均匀的条件。 本发明的实施例通过减少或最小化沉积和非沉积循环之间的圆顶上的温度波动来改善上室的温度控制并提高颗粒性能。 这允许产生更高的源功率等离子体并且促进极小几何形状的间隙填充。 圆顶设计提高了待处理衬底上等离子体分布的均匀性。 根据本发明的一个方面，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。 该室包括底部，侧壁和设置在侧壁顶部的圆顶。 圆顶具有圆顶，并具有限定腔直径的侧部。 顶部RF线圈设置在圆顶顶部上方。 侧面RF线圈邻近圆顶的侧部设置。 侧RF线圈通过线圈分离与顶部RF线圈间隔开。 线圈分离与室直径的比率通常为至少约0.15，更期望为约0.2-0.25。 在一些实施例中，真空系统包括设置在靠近底部的室的下室部分中的泵和节流闸阀。 预先设置在闸阀下方的筛网可以在闸阀上方移动以便于清洁并减少微粒。