公开(公告)号：US20240365013A1

公开(公告)日：2024-10-31

申请号：US18767812

申请日：2024-07-09

Applicant: Applied Materials, Inc.

Inventor： UPENDRA UMMETHALA ,  PHILIP KRAUS ,  KEITH BERDING ,  BLAKE ERICKSON ,  PATRICK TAE ,  DEVENDRA CHANNAPPA HOLEYANNAVAR ,  SHIVARAJ MANJUNATH NARA ,  ANANDAKUMAR PARAMESHWARAPPA ,  SIVASANKAR NAGARAJAN ,  DHIRENDRA KUMAR

IPC: H04N23/90 ,  H01L21/67 ,  H04N23/50 ,  H04N23/56

CPC classification number: H04N23/90 ,  H01L21/67276 ,  H04N23/56 ,  H04N23/555

Abstract: Embodiments disclosed herein include a diagnostic substrate, comprising a baseplate, and a first plurality of image sensors on the baseplate, where the first plurality of image sensors are oriented horizontal to the baseplate. In an embodiment, the diagnostic substrate further comprises a second plurality of image sensors on the baseplate, where the second plurality of image sensors are oriented at a non-orthogonal angle to the baseplate. In an embodiment, the diagnostic substrate further comprises a printed circuit board (PCB) on the baseplate, and a controller on the baseplate, where the controller is communicatively coupled to the first plurality of image sensors and the second plurality of image sensors by the PCB. In an embodiment, the diagnostic substrate further comprises a diffuser lid over the baseplate, the PCB, and the controller.

公开(公告)号：US20210033557A1

公开(公告)日：2021-02-04

申请号：US16526268

申请日：2019-07-30

Applicant: APPLIED MATERIALS, INC.

Inventor： PATRICK TAE ,  YAOLING PAN ,  LEONARD M. TEDESCHI

IPC: G01N27/22 ,  H01J37/32 ,  C23C16/46 ,  C23C16/04 ,  C23C16/52

Abstract: Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.