公开(公告)号：US20240365013A1

公开(公告)日：2024-10-31

申请号：US18767812

申请日：2024-07-09

Applicant: Applied Materials, Inc.

Inventor： UPENDRA UMMETHALA ,  PHILIP KRAUS ,  KEITH BERDING ,  BLAKE ERICKSON ,  PATRICK TAE ,  DEVENDRA CHANNAPPA HOLEYANNAVAR ,  SHIVARAJ MANJUNATH NARA ,  ANANDAKUMAR PARAMESHWARAPPA ,  SIVASANKAR NAGARAJAN ,  DHIRENDRA KUMAR

IPC: H04N23/90 ,  H01L21/67 ,  H04N23/50 ,  H04N23/56

CPC classification number: H04N23/90 ,  H01L21/67276 ,  H04N23/56 ,  H04N23/555

Abstract: Embodiments disclosed herein include a diagnostic substrate, comprising a baseplate, and a first plurality of image sensors on the baseplate, where the first plurality of image sensors are oriented horizontal to the baseplate. In an embodiment, the diagnostic substrate further comprises a second plurality of image sensors on the baseplate, where the second plurality of image sensors are oriented at a non-orthogonal angle to the baseplate. In an embodiment, the diagnostic substrate further comprises a printed circuit board (PCB) on the baseplate, and a controller on the baseplate, where the controller is communicatively coupled to the first plurality of image sensors and the second plurality of image sensors by the PCB. In an embodiment, the diagnostic substrate further comprises a diffuser lid over the baseplate, the PCB, and the controller.

公开(公告)号：US20200051794A1

公开(公告)日：2020-02-13

申请号：US16529211

申请日：2019-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： ANANTHA K. SUBRAMANI ,  PRABURAM RAJA ,  STEVEN V. SANSONI ,  JOHN FORSTER ,  PHILIP KRAUS ,  YANG GUO ,  PRASHANTH KOTHNUR ,  FARZAD HOUSHMAND ,  BENCHERKI MEBARKI ,  JOHN JOSEPH MAZZOCCO ,  THOMAS BREZOCZKY

IPC: H01J37/34 ,  B08B7/00

Abstract: Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.