公开(公告)号：US20140262032A1

公开(公告)日：2014-09-18

申请号：US14202472

申请日：2014-03-10

Applicant: APPLIED MATERIALS, INC

Inventor： KENNETH S. COLLINS ,  SATORU KOBAYASHI ,  KARTIK RAMASWAMY

IPC: H03L7/085

CPC classification number: H03L7/1075

Abstract: Methods and apparatus for generating a variable clock used to control a component of a substrate processing system are provided herein. In some embodiments, an apparatus for controlling a substrate processing system includes: a phase locked loop circuit for generating a relative clock that is phase locked to a variable frequency signal being used by a substrate processing chamber; and a controller, coupled to the phase locked loop circuit, for producing a control signal for a component of the substrate processing system, wherein the control signal is based upon the relative clock and an operating indicia of the substrate processing system.

Abstract translation: 本文提供了用于生成用于控制基板处理系统的部件的可变时钟的方法和装置。 在一些实施例中，一种用于控制衬底处理系统的装置包括：锁相环电路，用于产生相位锁定到由衬底处理室使用的可变频率信号的相对时钟; 以及耦合到所述锁相环电路的用于产生所述衬底处理系统的部件的控制信号的控制器，其中所述控制信号基于所述衬底处理系统的相对时钟和操作标记。

公开(公告)号：US20130320998A1

公开(公告)日：2013-12-05

申请号：US13944026

申请日：2013-07-17

Applicant: APPLIED MATERIALS, INC.

Inventor： HIROJI HANAWA ,  SATORU KOBAYASHI ,  KARTIK RAMASWAMY ,  SHAHID RAUF

IPC: G01R27/32

CPC classification number: G01R27/32 ,  G01R19/0061 ,  H05H1/0081

Abstract: An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber. An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.

Abstract translation: RF电流探针被封装在导电壳体中以允许其放置在等离子体反应器室内。 RF电压探头适于具有长同轴电缆，以允许测量设备远离探头连接，而不会使电压测量失真。

公开(公告)号：US20190189399A1

公开(公告)日：2019-06-20

申请号：US16218848

申请日：2018-12-13

Applicant: APPLIED MATERIALS, INC.

Inventor： SATORU KOBAYASHI ,  LANCE SCUDDER ,  DAVID BRITZ ,  SOONAM PARK ,  DMITRY LUBOMIRSKY ,  HIDEO SUGAI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32311 ,  H01J37/32201 ,  H01J37/3222 ,  H01J37/32229 ,  H01J2237/3341 ,  H01L21/67017

Abstract: Plasma is generated in a semiconductor process chamber by a plurality of microwave inputs with slow or fast rotation. Radial uniformity of the plasma is controlled by regulating the power ratio of a center-high mode and an edge-high mode of the plurality of microwave inputs into a microwave cavity. The radial uniformity of the generated plasma in a plasma chamber is attained by adjusting the power ratio for the two modes without inputting time-splitting parameters for each mode.