公开(公告)号：US20190189399A1

公开(公告)日：2019-06-20

申请号：US16218848

申请日：2018-12-13

Applicant: APPLIED MATERIALS, INC.

Inventor： SATORU KOBAYASHI ,  LANCE SCUDDER ,  DAVID BRITZ ,  SOONAM PARK ,  DMITRY LUBOMIRSKY ,  HIDEO SUGAI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32311 ,  H01J37/32201 ,  H01J37/3222 ,  H01J37/32229 ,  H01J2237/3341 ,  H01L21/67017

Abstract: Plasma is generated in a semiconductor process chamber by a plurality of microwave inputs with slow or fast rotation. Radial uniformity of the plasma is controlled by regulating the power ratio of a center-high mode and an edge-high mode of the plurality of microwave inputs into a microwave cavity. The radial uniformity of the generated plasma in a plasma chamber is attained by adjusting the power ratio for the two modes without inputting time-splitting parameters for each mode.

公开(公告)号：US20180148833A1

公开(公告)日：2018-05-31

申请号：US15800266

申请日：2017-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Sukti CHATTERJEE ,  LANCE SCUDDER ,  ERIC H. LIU ,  PRAVIN K. NARWANKAR ,  PRAMIT MANNA ,  ABHIJIT MALLICK

IPC: C23C16/448 ,  H01L21/02 ,  C23C16/24 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56 ,  C23C16/52

CPC classification number: C23C16/448 ,  C23C16/24 ,  C23C16/325 ,  C23C16/345 ,  C23C16/401 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664

Abstract: In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (HWCVD) process chamber, includes: (a) providing a silicon containing precursor gas into the processing volume, the silicon containing precursor gas is provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-silicon bonds within molecules of the silicon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable silicon containing layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of wires disposed within the processing volume above the substrate and the inlet.

公开(公告)号：US20180148832A1

公开(公告)日：2018-05-31

申请号：US15800249

申请日：2017-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Sukti CHATTERJEE ,  LANCE SCUDDER ,  ERIC H. LIU ,  PRAVIN K. NARWANKAR ,  PRAMIT MANNA ,  ABHIJIT MALLICK

IPC: C23C16/26 ,  C23C16/48 ,  H01L21/02

CPC classification number: C23C16/26 ,  C23C16/448 ,  C23C16/48 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/02277 ,  H01L21/02337 ,  H01L21/02348

Abstract: In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (HWCVD) process chamber, includes: (a) providing a carbon containing precursor gas into the processing volume, the carbon containing precursor gas being provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-carbon bonds within molecules of the carbon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable carbon layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of filaments disposed within the processing volume above the substrate and the inlet.