公开(公告)号：US20190198392A1

公开(公告)日：2019-06-27

申请号：US15853165

申请日：2017-12-22

Applicant: APPLIED MATERIALS, INC.

Inventor： AMRITA B. MULLICK ,  ISMAIL EMESH ,  UDAY MITRA ,  ROEY SHAVIV ,  REGINA FREED

IPC: H01L21/768 ,  H01L21/3205 ,  H01L21/3213 ,  C23F1/38 ,  C23F1/26

CPC classification number: H01L21/76883 ,  C23F1/26 ,  C23F1/38 ,  H01L21/32051 ,  H01L21/32134 ,  H01L21/7684

Abstract: Methods of etching tungsten are disclosed including: leveling a first top surface of a tungsten layer within a feature and atop a top surface of a substrate; and etching the tungsten layer with a peroxide such as hydrogen peroxide and one of a strong acid or a strong base to remove a first portion of the tungsten layer from atop the substrate to form a second top surface of a tungsten layer at a level below the top surface of the substrate. The methods are suitable for forming substantially level or flat top surfaces of a tungsten layer at a level below the top surface of the substrate or within one or more features such as vias or trenches.